公开(公告)号：US20160099690A1

公开(公告)日：2016-04-07

申请号：US14785484

申请日：2014-04-04

Applicant: MITSUBISHI ELECTRIC CORPORATION

Inventor： Eigo KUWATA ,  Koji YAMANAKA ,  Tasuku KIRIKOSHI ,  Yoshitaka KAMO

IPC: H03F1/56 ,  H03F3/19

CPC classification number: H03F1/565 ,  H03F1/48 ,  H03F3/19 ,  H03F3/605 ,  H03F2200/451

Abstract: The connection intervals of N amplifier blocks 3-1 to 3-N to an input transmission line 1 increase with the distance from a signal input terminal RFin, and among the N amplifier blocks 3-1 to 3-N, the input capacitor 4 in an amplifier block 3-n connected to the input transmission line 1 at a more distant side from the signal input terminal RFin has a lower capacitance value Cn.

Abstract translation: N个放大器块3-1至3-N到输入传输线1的连接间隔随着与信号输入端RFin的距离而增加，并且在N个放大器块3-1至3-N中，输入电容器4 在与信号输入端RFin更远的一侧连接到输入传输线1的放大器块3-n具有较低的电容值Cn。

公开(公告)号：US20200373441A1

公开(公告)日：2020-11-26

申请号：US16770999

申请日：2018-02-28

Applicant: Mitsubishi Electric Corporation

Inventor： Yoshitaka KAMO

IPC: H01L31/02 ,  G01R19/165

Abstract: Examples of an electronic component device includes a housing formed of a member that causes radiation to lose its energy by generating an electric charge when the housing is subjected to the radiation and an electronic component housed in the housing. The member is a semiconductor device member having a PN junction.

公开(公告)号：US20170077275A1

公开(公告)日：2017-03-16

申请号：US15145048

申请日：2016-05-03

Applicant: Mitsubishi Electric Corporation

Inventor： Hiroyuki OKAZAKI ,  Kenichiro KURAHASHI ,  Hidetoshi KOYAMA ,  Toshiaki KITANO ,  Yoshitaka KAMO

IPC: H01L29/778 ,  H01L29/47 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L21/0495 ,  H01L21/28581 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/7786

Abstract: A semiconductor device includes: a substrate; a nitride semiconductor film on the substrate; a schottky electrode on the nitride semiconductor film; a first insulating film on the nitride semiconductor film, contacting at least part of a side surface of the schottky electrode, forming an interface with the nitride semiconductor film and formed of SiN; and a second insulating film covering the schottky electrode and the first insulating film and formed of AlO whose atomic layers are alternately disposed.

Abstract translation: 半导体器件包括：衬底; 基板上的氮化物半导体膜; 氮化物半导体膜上的肖特基电极; 在所述氮化物半导体膜上的第一绝缘膜，与所述肖特基电极的侧面的至少一部分接触，与所述氮化物半导体膜形成由SiN形成的界面; 以及覆盖所述肖特基电极和所述第一绝缘膜并由其原子层交替设置的AlO形成的第二绝缘膜。

公开(公告)号：US20210328557A1

公开(公告)日：2021-10-21

申请号：US16625369

申请日：2017-07-14

Applicant: MITSUBISHI ELECTRIC CORPORATION

Inventor： Dai NINOMIYA ,  Eigo KUWATA ,  Kazuhiko NAKAHARA ,  Makoto KIMURA ,  Yoshitaka KAMO

IPC: H03F1/56 ,  H03F3/19

Abstract: A MIM capacitor is included in any one or more of a first matching circuit and a second matching circuit. The mat capacitor performs impedance matching of a fundamental wave included in a high-frequency signal with a transmission line, and forms a short-circuit point for a harmonic included in the high-frequency signal at a connection point with the transmission line.

公开(公告)号：US20170294887A1

公开(公告)日：2017-10-12

申请号：US15361220

申请日：2016-11-25

Applicant: Mitsubishi Electric Corporation

Inventor： Yoshitaka KAMO ,  Yoshitsugu YAMAMOTO

IPC: H03F3/60 ,  H01L23/66 ,  H03F3/193 ,  H01L27/06

CPC classification number: H03F3/604 ,  H01L21/8252 ,  H01L23/66 ,  H01L27/0203 ,  H01L27/0605 ,  H01L27/085 ,  H01L29/0657 ,  H01L2223/6644 ,  H03F3/193 ,  H03F3/195 ,  H03F2200/408

Abstract: A semiconductor device includes: a semiconductor substrate whose contour is a pentagon; a front-stage amplifier formed relatively near a vertex of the pentagon of the semiconductor substrate; and a rear-stage amplifier formed relatively near a side opposed to the vertex of the semiconductor substrate and amplifying an output from the front-stage amplifier.