公开(公告)号：US20230020689A1

公开(公告)日：2023-01-19

申请号：US17935019

申请日：2022-09-23

申请人： Micron Technology, Inc.

发明人： Chan Yoo ,  Todd O. Bolken

IPC分类号： H01L25/10 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L21/82 ,  H01L23/495 ,  H01L25/065

摘要： Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

公开(公告)号：US11456286B2

公开(公告)日：2022-09-27

申请号：US16840794

申请日：2020-04-06

申请人： Micron Technology, Inc.

发明人： Chan Yoo ,  Todd O. Bolken

IPC分类号： H01L23/12 ,  H01L25/10 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L21/82 ,  H01L23/495 ,  H01L25/065

摘要： Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

公开(公告)号：US09508686B2

公开(公告)日：2016-11-29

申请号：US14563982

申请日：2014-12-08

申请人： Micron Technology, Inc.

发明人： Chan Yoo ,  Todd O. Bolken

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L25/065 ,  H01L23/00 ,  H01L25/10 ,  H01L21/82 ,  H01L23/495

CPC分类号： H01L25/105 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/82 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/495 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06177 ,  H01L2224/1012 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/12105 ,  H01L2224/1301 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92163 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/83

摘要： Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

摘要翻译： 本文公开了制造半导体器件的方法。 根据特定实施例配置的方法包括在密封剂上形成间隔物材料，使得密封剂将间隔物材料与半导体器件的有源表面和远离有源表面突出的至少一个互连件分开。 该方法还包括模制密封剂，使得互连件的至少一部分延伸穿过密封剂并进入隔离材料。 互连可以包括与半导体器件的有源表面基本共面的接触表面，用于提供与半导体器件的电连接。

公开(公告)号：US09559087B2

公开(公告)日：2017-01-31

申请号：US14102310

申请日：2013-12-10

申请人： MICRON TECHNOLOGY, INC.

发明人： Todd O. Bolken ,  Chad A. Cobbley

IPC分类号： H01L25/00 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10

CPC分类号： H01L25/50 ,  H01L23/3128 ,  H01L23/5383 ,  H01L24/10 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L2224/05599 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/85424 ,  H01L2224/85444 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： Techniques for fabricating multiple device components. Specifically, techniques for fabricating a stacked package comprising at least one I/C module and a multi-chip package. The multi-chip package includes a plurality of integrated circuit dice coupled to a carrier. The dice are encapsulated such that conductive elements are exposed through the encapsulant. The conductive elements are electrically coupled to the chips. The I/C module comprises an interposer having a plurality of integrated circuit dice disposed thereon. The dice of the I/C module are electrically coupled to the interposer via bondwires. The interposer is configured such that vias are aligned with the conductive elements on the multi-chip package. The multi-chip package and I/C module may be fabricated separately and subsequently coupled together to form a stacked package.

摘要翻译： 制造多器件组件的技术。 具体地，涉及用于制造包括至少一个I / C模块和多芯片封装的堆叠封装的技术。 多芯片封装包括耦合到载体的多个集成电路芯片。 骰子被封装，使得导电元件通过密封剂暴露。 导电元件电耦合到芯片。 I / C模块包括具有设置在其上的多个集成电路芯片的插入器。 I / C模块的裸片通过焊丝电耦合到插入器。 插入器被配置为使得通孔与多芯片封装上的导电元件对准。 多芯片封装和I / C模块可以单独制造，然后耦合在一起以形成堆叠封装。

公开(公告)号：US20140099753A1

公开(公告)日：2014-04-10

申请号：US14102310

申请日：2013-12-10

申请人： MICRON TECHNOLOGY, INC.

发明人： Todd O. Bolken ,  Chad A. Cobbley

IPC分类号： H01L25/00

CPC分类号： H01L25/50 ,  H01L23/3128 ,  H01L23/5383 ,  H01L24/10 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L2224/05599 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/85424 ,  H01L2224/85444 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： Techniques for fabricating multiple device components. Specifically, techniques for fabricating a stacked package comprising at least one I/C module and a multi-chip package. The multi-chip package includes a plurality of integrated circuit dice coupled to a carrier. The dice are encapsulated such that conductive elements are exposed through the encapsulant. The conductive elements are electrically coupled to the chips. The I/C module comprises an interposer having a plurality of integrated circuit dice disposed thereon. The dice of the I/C module are electrically coupled to the interposer via bondwires. The interposer is configured such that vias are aligned with the conductive elements on the multi-chip package. The multi-chip package and I/C module may be fabricated separately and subsequently coupled together to form a stacked package.

摘要翻译： 制造多器件组件的技术。 具体地，涉及用于制造包括至少一个I / C模块和多芯片封装的堆叠封装的技术。 多芯片封装包括耦合到载体的多个集成电路芯片。 骰子被封装，使得导电元件通过密封剂暴露。 导电元件电耦合到芯片。 I / C模块包括具有设置在其上的多个集成电路芯片的插入器。 I / C模块的裸片通过焊丝电耦合到插入器。 插入器被配置为使得通孔与多芯片封装上的导电元件对准。 多芯片封装和I / C模块可以单独制造，然后耦合在一起以形成堆叠封装。

公开(公告)号：US09978730B2

公开(公告)日：2018-05-22

申请号：US15334069

申请日：2016-10-25

申请人： Micron Technology, Inc.

发明人： Chan Yoo ,  Todd O. Bolken

IPC分类号： H01L21/56 ,  H01L21/48 ,  H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L21/82 ,  H01L23/495 ,  H01L25/065

CPC分类号： H01L25/105 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/82 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/495 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06177 ,  H01L2224/1012 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/12105 ,  H01L2224/1301 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92163 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/83

摘要： Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

公开(公告)号：US20150137365A1

公开(公告)日：2015-05-21

申请号：US14563982

申请日：2014-12-08

申请人： Micron Technology, Inc.

发明人： Chan Yoo ,  Todd O. Bolken

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L25/105 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/82 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/495 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06177 ,  H01L2224/1012 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/12105 ,  H01L2224/1301 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92163 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/83

摘要： Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

摘要翻译： 本文公开了制造半导体器件的方法。 根据特定实施例配置的方法包括在密封剂上形成间隔物材料，使得密封剂将间隔物材料与半导体器件的有源表面和远离有源表面突出的至少一个互连件分开。 该方法还包括模制密封剂，使得互连件的至少一部分延伸穿过密封剂并进入隔离材料。 互连可以包括与半导体器件的有源表面基本共面的接触表面，用于提供与半导体器件的电连接。

公开(公告)号：US20200243493A1

公开(公告)日：2020-07-30

申请号：US16840794

申请日：2020-04-06

申请人： Micron Technology, Inc.

发明人： Chan Yoo ,  Todd O. Bolken

IPC分类号： H01L25/10 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L21/82 ,  H01L23/495 ,  H01L25/065

摘要： Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

公开(公告)号：US20180226387A1

公开(公告)日：2018-08-09

申请号：US15941611

申请日：2018-03-30

申请人： Micron Technology, Inc.

发明人： Chan Yoo ,  Todd O. Bolken

IPC分类号： H01L25/10 ,  H01L23/00 ,  H01L21/56 ,  H01L23/495 ,  H01L21/82 ,  H01L25/065 ,  H01L23/31

CPC分类号： H01L25/105 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/82 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/495 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06177 ,  H01L2224/1012 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/12105 ,  H01L2224/1301 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92163 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/83

摘要： Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

公开(公告)号：US20170040303A1

公开(公告)日：2017-02-09

申请号：US15334069

申请日：2016-10-25

申请人： Micron Technology, Inc.

发明人： Chan Yoo ,  Todd O. Bolken

IPC分类号： H01L25/10 ,  H01L25/065 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L25/105 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/82 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/495 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06177 ,  H01L2224/1012 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/12105 ,  H01L2224/1301 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/14051 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92163 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2224/83

摘要： Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a spacer material on an encapsulant such that the encapsulant separates the spacer material from an active surface of a semiconductor device and at least one interconnect projecting away from the active surface. The method further includes molding the encapsulant such that at least a portion of the interconnect extends through the encapsulant and into the spacer material. The interconnect can include a contact surface that is substantially co-planar with the active surface of the semiconductor device for providing an electrical connection with the semiconductor device.

摘要翻译： 本文公开了制造半导体器件的方法。 根据特定实施例配置的方法包括在密封剂上形成间隔物材料，使得密封剂将间隔物材料与半导体器件的有源表面和远离有源表面突出的至少一个互连件分开。 该方法还包括模制密封剂，使得互连件的至少一部分延伸穿过密封剂并进入隔离材料。 互连可以包括与半导体器件的有源表面基本共面的接触表面，用于提供与半导体器件的电连接。