公开(公告)号：US11791268B2

公开(公告)日：2023-10-17

申请号：US17666093

申请日：2022-02-07

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Christian George Emor ,  Travis Rampton ,  Everett Allen McTeer ,  Rita J. Klein

IPC: H01L23/535 ,  H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76876 ,  H01L21/76895 ,  H01L23/5283 ,  H01L23/53257 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.

公开(公告)号：US20220302032A1

公开(公告)日：2022-09-22

申请号：US17806438

申请日：2022-06-10

Applicant: Micron Technology Inc.

Inventor： Jordan D. Greenlee ,  Christian George Emor ,  Luca Fumagalli ,  John D. Hopkins ,  Rita J. Klein ,  Christopher W. Petz ,  Everett A. McTeer

IPC: H01L23/535 ,  H01L23/532 ,  H01L21/768 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

Abstract: A microelectronic device includes a first conductive structure, a barrier structure, a conductive liner structure, and a second conductive structure. The first conductive structure is within a first filled opening in a first dielectric structure. The barrier structure is within the first filled opening in the first dielectric structure and vertically overlies the first conductive structure. The conductive liner structure is on the barrier structure and is within a second filled opening in a second dielectric structure vertically overlying the first dielectric structure. The second conductive structure vertically overlies and is horizontally surrounded by the conductive liner structure within the second filled opening in the second dielectric structure. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

公开(公告)号：US11158577B2

公开(公告)日：2021-10-26

申请号：US16778346

申请日：2020-01-31

Applicant: Micron Technology, Inc.

Inventor： Biow Hiem Ong ,  David A. Daycock ,  Chieh Hsien Quek ,  Chii Wean Calvin Chen ,  Christian George Emor ,  Wing Yu Lo

IPC: H01L23/535 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L27/11526 ,  H01L27/11582 ,  H01L27/11556

Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

公开(公告)号：US11967556B2

公开(公告)日：2024-04-23

申请号：US17452113

申请日：2021-10-25

Applicant: Micron Technology, Inc.

Inventor： Biow Hiem Ong ,  David A. Daycock ,  Chieh Hsien Quek ,  Chii Wean Calvin Chen ,  Christian George Emor ,  Wing Yu Lo

IPC: H01L23/535 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H10B41/27 ,  H10B41/40 ,  H10B43/27

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53266 ,  H10B41/40 ,  H10B41/27 ,  H10B43/27

Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

公开(公告)号：US20220230962A1

公开(公告)日：2022-07-21

申请号：US17666093

申请日：2022-02-07

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Christian George Emor ,  Travis Rampton ,  Everett Allen McTeer ,  Rita J. Klein

IPC: H01L23/535 ,  H01L21/768 ,  H01L27/11582 ,  H01L23/532 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L23/528

Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.

公开(公告)号：US11244903B2

公开(公告)日：2022-02-08

申请号：US16730505

申请日：2019-12-30

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Christian George Emor ,  Travis Rampton ,  Everett Allen McTeer ,  Rita J. Klein

IPC: H01L23/535 ,  H01L21/768 ,  H01L27/11582 ,  H01L23/532 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L23/528

Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.

公开(公告)号：US20210287990A1

公开(公告)日：2021-09-16

申请号：US16820046

申请日：2020-03-16

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Christian George Emor ,  Luca Fumagalli ,  John D. Hopkins ,  Rita J. Klein ,  Christopher W. Petz ,  Everett A. McTeer

IPC: H01L23/535 ,  H01L23/532 ,  H01L21/768 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: A microelectronic device comprises a first conductive structure, a barrier structure, a conductive liner structure, and a second conductive structure. The first conductive structure is within a first filled opening in a first dielectric structure. The barrier structure is within the first filled opening in the first dielectric structure and vertically overlies the first conductive structure. The conductive liner structure is on the barrier structure and is within a second filled opening in a second dielectric structure vertically overlying the first dielectric structure. The second conductive structure vertically overlies and is horizontally surrounded by the conductive liner structure within the second filled opening in the second dielectric structure. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

公开(公告)号：US20210242131A1

公开(公告)日：2021-08-05

申请号：US16778346

申请日：2020-01-31

Applicant: Micron Technology, Inc.

Inventor： Biow Hiem Ong ,  David A. Daycock ,  Chieh Hsien Quek ,  Chii Wean Calvin Chen ,  Christian George Emor ,  Wing Yu Lo

IPC: H01L23/535 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L27/11582 ,  H01L27/11556

Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

公开(公告)号：US20210202388A1

公开(公告)日：2021-07-01

申请号：US16730505

申请日：2019-12-30

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Christian George Emor ,  Travis Rampton ,  Everett Allen McTeer ,  Rita J. Klein

IPC: H01L23/535 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.