公开(公告)号：US20220358971A1

公开(公告)日：2022-11-10

申请号：US17669189

申请日：2022-02-10

Applicant: Micron Technology, Inc.

Inventor： Che-Chi Lee ,  Terrence B. McDaniel ,  Kehao Zhang ,  Albert P. Chan ,  Clement Jacob ,  Luca Fumagalli ,  Vinay Nair

IPC: G11C5/10 ,  H01L27/108 ,  H01L49/02 ,  G11C11/405 ,  H01L27/06

Abstract: Some embodiments include an integrated assembly having first and second source/drain regions laterally offset from one another. Metal silicide is adjacent to lateral surfaces of the source/drain regions. Metal is adjacent to the metal silicide. Container-shaped first and second capacitor electrodes are coupled to the source/drain regions through the metal silicide and the metal. Capacitor dielectric material lines interior surfaces of the container-shaped first and second capacitor electrodes, A shared capacitor electrode extends vertically between the first and second capacitor electrodes, and extends into the lined first and second capacitor electrodes. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US11309315B2

公开(公告)日：2022-04-19

申请号：US16943108

申请日：2020-07-30

Applicant: Micron Technology, Inc.

Inventor： Terrence B. McDaniel ,  Si-Woo Lee ,  Vinay Nair ,  Luca Fumagalli

IPC: H01L27/108 ,  G11C5/06

Abstract: Systems, methods, and apparatuses are provided for digit line formation for horizontally oriented access devices. One example method includes forming layers of a first dielectric material, a low doped semiconductor material, and a second dielectric material, in repeating iterations vertically to form a vertical stack, forming a vertical opening in the vertical stack, selectively etching the second dielectric material to form a horizontal opening in the second dielectric material, gas phase doping a dopant on a top surface of the low doped semiconductor material in the horizontal opening to form a source/drain region, forming a high doped semiconductor material in the horizontal opening, selectively etching the high doped semiconductor material formed in the horizontal opening such that a portion of the high doped semiconductor material remains, and converting the remaining high doped semiconductor material to a conductive material having a different characteristic from the remaining high doped semiconductor material.

公开(公告)号：US20220037334A1

公开(公告)日：2022-02-03

申请号：US16943108

申请日：2020-07-30

Applicant: Micron Technology, Inc.

Inventor： Terrence B. McDaniel ,  Si-Woo Lee ,  Vinay Nair ,  Luca Fumagalli

IPC: H01L27/108 ,  G11C5/06

Abstract: Systems, methods, and apparatuses are provided for digit line formation for horizontally oriented access devices. One example method includes forming layers of a first dielectric material, a low doped semiconductor material, and a second dielectric material, in repeating iterations vertically to form a vertical stack, forming a vertical opening in the vertical stack, selectively etching the second dielectric material to form a horizontal opening in the second dielectric material, gas phase doping a dopant on a top surface of the low doped semiconductor material in the horizontal opening to form a source/drain region, forming a high doped semiconductor material in the horizontal opening, selectively etching the high doped semiconductor material formed in the horizontal opening such that a portion of the high doped semiconductor material remains, and converting the remaining high doped semiconductor material to a conductive material having a different characteristic from the remaining high doped semiconductor material.

公开(公告)号：US20200212046A1

公开(公告)日：2020-07-02

申请号：US16235957

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii ,  Yongjun J. Hu ,  Amirhasan Nourbakhsh ,  Durai Vishak Nirmal Ramaswamy ,  Christopher W. Petz ,  Luca Fumagalli

IPC: H01L27/108

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

公开(公告)号：US11127745B2

公开(公告)日：2021-09-21

申请号：US16906718

申请日：2020-06-19

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii ,  Yongjun J. Hu ,  Amirhasan Nourbakhsh ,  Durai Vishak Nirmal Ramaswamy ,  Christopher W. Petz ,  Luca Fumagalli

IPC: H01L27/108

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

公开(公告)号：US20210043579A1

公开(公告)日：2021-02-11

申请号：US17076658

申请日：2020-10-21

Applicant: Micron Technology, Inc.

Inventor： Luca Fumagalli ,  Davide Colombo

IPC: H01L23/532 ,  H01L23/528 ,  H01L27/108 ,  H01L21/768 ,  H01L21/285 ,  H01L21/02

Abstract: Some embodiments include an apparatus having a structure with a surface which comprises tungsten. The apparatus has titanium-nitride-containing protective material along and directly against the surface. The structure may be a digit line of a memory array. Some embodiments include a method in which an assembly is formed to have a tungsten-containing layer with an exposed tungsten-containing upper surface. Titanium-nitride-containing protective material is formed over and directly against the tungsten-containing upper surface. Additional material is formed over the protective material, and is spaced from the tungsten-containing upper surface by the protective material. The additional material may comprise silicon nitride and/or silicon dioxide.

公开(公告)号：US20240234482A9

公开(公告)日：2024-07-11

申请号：US18047978

申请日：2022-10-19

Applicant: Micron Technology, Inc.

Inventor： Sanket S. Kelkar ,  Michael Mutch ,  Luca Fumagalli ,  Hisham Abdussamad Abbas ,  Brenda D. Kraus ,  Dojun Kim ,  Christopher W. Petz ,  Darwin Franseda Fan

IPC: H01L49/02 ,  H01G4/008 ,  H01G4/12 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/1218 ,  H01L27/10814 ,  H01L27/10852

Abstract: A microelectronic device comprises an access device comprising a source region and a drain region spaced from the source region, an insulative material vertically adjacent to the access device, and a capacitor within the insulative material and in electrical communication with the access device. The capacitor comprises a material comprising silicon oxynitride or titanium silicon nitride over surfaces of the insulative material, a first electrode comprising titanium nitride on the material, a dielectric material over the first electrode, and a second electrode on the dielectric material. Related methods of forming the microelectronic device and an electronic system including the microelectronic devices are also described.

公开(公告)号：US11282548B1

公开(公告)日：2022-03-22

申请号：US17307686

申请日：2021-05-04

Applicant: Micron Technology, Inc.

Inventor： Che-Chi Lee ,  Terrence B. McDaniel ,  Kehao Zhang ,  Albert P. Chan ,  Clement Jacob ,  Luca Fumagalli ,  Vinay Nair

IPC: G11C5/10 ,  H01L27/108 ,  H01L49/02 ,  G11C11/405 ,  H01L27/06

Abstract: Some embodiments include an integrated assembly having first and second source/drain regions laterally offset from one another. Metal silicide is adjacent to lateral surfaces of the source/drain regions. Metal is adjacent to the metal silicide. Container-shaped first and second capacitor electrodes are coupled to the source/drain regions through the metal silicide and the metal. Capacitor dielectric material lines interior surfaces of the container-shaped first and second capacitor electrodes, A shared capacitor electrode extends vertically between the first and second capacitor electrodes, and extends into the lined first and second capacitor electrodes. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US10707212B1

公开(公告)日：2020-07-07

申请号：US16235957

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii ,  Yongjun J. Hu ,  Amirhasan Nourbakhsh ,  Durai Vishak Nirmal Ramaswamy ,  Christopher W. Petz ,  Luca Fumagalli

IPC: H01L27/108

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

公开(公告)号：US20190267328A1

公开(公告)日：2019-08-29

申请号：US15904683

申请日：2018-02-26

Applicant: Micron Technology, Inc.

Inventor： Luca Fumagalli ,  Davide Colombo

IPC: H01L23/532 ,  H01L23/528 ,  H01L27/108 ,  H01L21/768 ,  H01L21/02 ,  H01L21/285

Abstract: Some embodiments include an apparatus having a structure with a surface which comprises tungsten. The apparatus has titanium-nitride-containing protective material along and directly against the surface. The structure may be a digit line of a memory array. Some embodiments include a method in which an assembly is formed to have a tungsten-containing layer with an exposed tungsten-containing upper surface. Titanium-nitride-containing protective material is formed over and directly against the tungsten-containing upper surface. Additional material is formed over the protective material, and is spaced from the tungsten-containing upper surface by the protective material. The additional material may comprise silicon nitride and/or silicon dioxide.