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    Method for high-volume production of light emitting diodes with attached lenses
    1.
    发明申请
    Method for high-volume production of light emitting diodes with attached lenses 审中-公开
    大容量生产附有镜片的发光二极管的方法

    公开(公告)号：US20080099774A1

    公开(公告)日：2008-05-01

    申请号：US11588501

    申请日：2006-10-27

    申请人： Michael R. T. Tan ,  Gary R. Trott

    发明人： Michael R. T. Tan ,  Gary R. Trott

    IPC分类号： H01L33/00

    CPC分类号： H01L33/58 ,  H01L2933/0058 ,  Y10T156/10

    摘要： A method for high-volume production of light emitting diodes with attached lenses involves providing pre-fabricated lenses, wherein the pre-fabricated lenses are held by a common transfer structure, simultaneously attaching the pre-fabricated lenses to respective ones of light emitting diodes, and releasing the pre-fabricated lenses from the common transfer structure. In an embodiment, the light emitting diodes are distributed in a pattern on a common substrate and the common transfer structure is configured to hold the pre-fabricated lenses in a pattern that corresponds to the pattern of the light emitting diodes on the common substrate. Further, to attach the pre-fabricated lenses to the light emitting diodes, the common transfer structure is positioned relative to the common substrate such that the pre-fabricated lenses are aligned with the light emitting diodes.

    摘要翻译： 用于大量生产具有附加透镜的发光二极管的方法涉及提供预制透镜，其中预制透镜由公共转印结构保持，同时将预制透镜附接到相应的发光二极管， 并且从公共转移结构释放预制镜片。 在一个实施例中，发光二极管以公共衬底上的图案分布，并且公共传输结构被配置为将预制透镜保持在与公共衬底上的发光二极管的图案相对应的图案中。 此外，为了将预制透镜附接到发光二极管，公共转印结构相对于公共基板定位，使得预制透镜与发光二极管对准。

    Material systems for semiconductor tunnel-junction structures
    2.
    发明授权
    Material systems for semiconductor tunnel-junction structures 失效
    半导体隧道结结构材料系统

    公开(公告)号：US06765238B2

    公开(公告)日：2004-07-20

    申请号：US10243520

    申请日：2002-09-12

    申请人： Yin-Lan Chang ,  Ashish Tandon ,  Michael H. Leary ,  Michael R. T. Tan

    发明人： Yin-Lan Chang ,  Ashish Tandon ,  Michael H. Leary ,  Michael R. T. Tan

    IPC分类号： H01L2988

    CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/3095 ,  H01S5/32366 ,  H01S5/34306 ,  Y10S257/918

    摘要： The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.

    摘要翻译： 隧道结结构包括第一半导体材料的p型隧道结层，第二半导体材料的n型隧道结层和隧道结层之间的隧道结。 至少一种半导体材料包括镓（Ga），砷（As）和氮（N）或锑（Sb）。 通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。

    N-drive or P-drive VCSEL array
    4.
    发明授权
    N-drive or P-drive VCSEL array 失效
    N驱动或P驱动VCSEL阵列

    公开(公告)号：US6069908A

    公开(公告)日：2000-05-30

    申请号：US20724

    申请日：1998-02-09

    申请人： Albert T. Yuen ,  Michael R. T. Tan ,  Chun Lei

    发明人： Albert T. Yuen ,  Michael R. T. Tan ,  Chun Lei

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/183 ,  H01S5/187 ,  H01S5/42 ,  H01S3/19

    CPC分类号： H01S5/183 ,  H01S5/423 ,  H01S5/0208 ,  H01S5/0422

    摘要： A VCSEL that is adapted to the fabrication of an array of VCSELs. A VCSEL array according to the present invention includes first and second VCSELs for generating light of a predetermined wavelength. Each VCSEL includes a bottom reflector comprising an epitaxial layer of a semiconductor of a first conductivity type, a light generation region and a top reflector comprising a semiconductor of a second conductivity type. A bottom electrode is electrically connected to the bottom reflector, and a top electrode is electrically connected to the top reflector. The bottom electrode is grown on top of a buffer layer having an electrical conductivity less than a predetermined value and a crystalline structure that permits epitaxial growth of the bottom reflector on the buffer layer. The buffer layer may be grown on top of a substrate or be the substrate itself in the case in which a substrate having sufficiently low conductivity is utilized. The bottom reflector of each of the VCSELs is in contact with the top of the buffer layer. The first and second VCSELs are electrically isolated from one another by a trench extending into the buffer layer. The buffer layer is constructed from a material having resistivity that is sufficiently low to prevent cross-talk between the first and second VCSELs.

    摘要翻译： 适用于制造VCSEL阵列的VCSEL。 根据本发明的VCSEL阵列包括用于产生预定波长的光的第一和第二VCSEL。 每个VCSEL包括底部反射器，其包括第一导电类型的半导体的外延层，发光区域和包括第二导电类型的半导体的顶部反射器。 底部电极电连接到底部反射器，并且顶部电极电连接到顶部反射器。 底部电极生长在具有小于预定值的电导率的缓冲层的顶部上，并且允许底部反射器在缓冲层上外延生长的晶体结构。 在使用具有足够低的导电性的基板的情况下，可以在衬底的顶部生长缓冲层或者作为衬底本身。 每个VCSEL的底部反射器与缓冲层的顶部接触。 第一和第二VCSEL通过延伸到缓冲层中的沟槽彼此电隔离。 缓冲层由具有足够低的电阻率的材料构成，以防止第一和第二VCSEL之间的串扰。

    N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
    5.
    发明授权
    N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same 失效
    在n型衬底上制造的N驱动p普通发光器件及其制造方法

    公开(公告)号：US5892787A

    公开(公告)日：1999-04-06

    申请号：US635838

    申请日：1996-04-22

    申请人： Michael R. T. Tan ,  Albert T. Yuen ,  Shih-Yuan Wang ,  Ghulam Hasnain ,  Yu-Min Houng

    发明人： Michael R. T. Tan ,  Albert T. Yuen ,  Shih-Yuan Wang ,  Ghulam Hasnain ,  Yu-Min Houng

    IPC分类号： H01S5/00 ,  H01L33/00 ,  H01L33/30 ,  H01S5/042 ,  H01S5/183 ,  H01S5/30 ,  H01S5/42 ,  H01S3/19

    CPC分类号： H01L33/30 ,  H01L33/0016 ,  H01L33/0062 ,  H01S5/18308 ,  H01S5/0207 ,  H01S5/0421 ,  H01S5/18305 ,  H01S5/2059 ,  H01S5/2063 ,  H01S5/3054 ,  H01S5/3095 ,  H01S5/423

    摘要： A substantially n-type substrate structure having a p-type surface for use in semiconductor devices as a substitute for a p-type semiconductor substrate. The substrate structure comprises a substrate region and a buffer region. The substrate region is a region of n-type compound semiconductor, and includes a degeneratively n-doped portion adjacent its first surface. The buffer region is a region of compound semiconductor doped with a p-type dopant. The buffer region is located on the first surface of the substrate region and includes a surface remote from the substrate region that provides the p-type surface of the substrate structure. The buffer region also includes a degeneratively p-doped portion adjacent the degeneratively n-doped portion of the substrate region. The substrate structure includes a tunnel junction between the degeneratively n-doped portion of the substrate region and the degeneratively p-doped portion of the buffer region. The substrate structure is made by degeneratively doping a substrate region of n-type compound semiconductor material adjacent its first surface with an n-type impurity, and depositing a layer of compound semiconductor material doped with a p-type impurity on the first surface of the substrate region to form a buffer region that includes a surface remote from the substrate region. In the course of depositing the compound semiconductor material to form the buffer region, the compound semiconductor material is degeneratively doped with the p-type impurity at least in a portion adjacent the substrate region to form a tunnel junction between the substrate region and the buffer region.

    摘要翻译： 具有用于半导体器件的p型表面作为p型半导体衬底的替代物的基本为n型衬底结构。 衬底结构包括衬底区域和缓冲区域。 衬底区域是n型化合物半导体的区域，并且包括与其第一表面相邻的退化的n-掺杂部分。 缓冲区是掺杂有p型掺杂剂的化合物半导体的区域。 缓冲区域位于衬底区域的第一表面上并且包括远离衬底区域的表面，该表面提供衬底结构的p型表面。 缓冲区还包括与衬底区域的退化的n掺杂部分相邻的退化的p掺杂部分。 衬底结构包括在衬底区域的退化的n掺杂部分和缓冲区域的退化的p掺杂部分之间的隧道结。 衬底结构是通过用n型杂质将邻近其第一表面的n型化合物半导体材料的衬底区域简单地掺杂制成的，并且在第一表面上沉积掺杂有p型杂质的化合物半导体材料层 衬底区域以形成包括远离衬底区域的表面的缓冲区域。 在沉积化合物半导体材料以形成缓冲区的过程中，化合物半导体材料至少在与衬底区域相邻的部分中被p型杂质退变掺杂以在衬底区域和缓冲区域之间形成隧道结 。

    Method of making a surface emitting laser with oxygen ion implants followed by epitaxial regrowth
    6.
    发明授权
    Method of making a surface emitting laser with oxygen ion implants followed by epitaxial regrowth 失效
    用氧离子注入制造表面发射激光，然后进行外延再生的方法

    公开(公告)号：US5266503A

    公开(公告)日：1993-11-30

    申请号：US771069

    申请日：1991-10-02

    申请人： Shih-Yuan Wang ,  Michael R. T. Tan

    发明人： Shih-Yuan Wang ,  Michael R. T. Tan

    IPC分类号： H01L21/76 ,  H01L33/00 ,  H01S5/183 ,  H01S5/20 ,  H01S5/223 ,  H01S5/24 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01L21/7605 ,  H01L33/0062 ,  H01S5/0207 ,  H01S5/18308 ,  H01S5/18305 ,  H01S5/2063 ,  H01S5/2234 ,  H01S5/24 ,  H01S5/3432 ,  Y10S148/095

    摘要： A surface emitting laser diode device is disclosed where an active layer is implanted with oxygen ions except for a small active region. The active region includes a pn junction for generating radiation in response to passage of electrical current therethrough. After the oxygen implantation, mirror layers are grown on top of the active layer to reflect light generated in the active region back into the active region to induce more radiation emission. Mirror layers are also provided underneath the active region for the same purpose. Contact layers are provided on the top and bottom of the structure just described so that when an electrical potential is applied between the two contacts, electrical current will flow between the contacts between the active region for generating radiation. The oxygen-implanted isolation region surrounds the active region in order to confine current flow to the active region.

    摘要翻译： 公开了一种表面发射激光二极管器件，其中除了小的有源区域之外，用氧离子注入有源层。 有源区包括用于响应电流通过其中的辐射而产生辐射的pn结。 在氧注入之后，镜层生长在有源层的顶部上，以将在有源区中产生的光反射回有源区，以引起更多的辐射发射。 为了相同的目的，镜面层也设置在活动区域​​的下方。 接触层设置在刚刚描述的结构的顶部和底部，使得当在两个触点之间施加电势时，电流将在用于产生辐射的有源区域之间的触点之间流动。 氧注入的隔离区围绕有源区域，以限制电流流向有源区。

    High thermal conductivity vertical cavity surface emitting laser (VCSEL)
    8.
    发明授权
    High thermal conductivity vertical cavity surface emitting laser (VCSEL) 有权
    高导热性垂直腔表面发射激光器（VCSEL）

    公开(公告)号：US07372886B2

    公开(公告)日：2008-05-13

    申请号：US10862753

    申请日：2004-06-07

    申请人： Yoon K. Song ,  Michael H. Leary ,  Michael R. T. Tan

    发明人： Yoon K. Song ,  Michael H. Leary ,  Michael R. T. Tan

    IPC分类号： H01S5/00 ,  H01S3/04 ,  H01S3/08

    CPC分类号： H01S5/02461 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18327

    摘要： A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced at the light generation layer is more efficiently dissipated due to the presence of the HTC layer. Alternatively, a light generating device such as a VCSEL includes a light generation layer, a top reflector, and a high thermal conductivity (HTC) bottom reflector. Heat produced at the light generation layer is more efficiently dissipated due to the fact that the bottom reflector is a HTC DBR reflector having lower thermal resistivity than a conventional DBR reflector.

    摘要翻译： 诸如VCSEL的发光装置在光产生层和底部反射器之间包括光产生层，顶部反射器，底部反射器和高热导率（HTC）层。 光产生层适于产生具有第一波长的光。 由于HTC层的存在，在光产生层产生的热更有效地消散。 或者，诸如VCSEL的发光装置包括光产生层，顶反射器和高热导率（HTC）底反射器。 由于底部反射器是具有比常规DBR反射器低的热电阻率的HTC DBR反射器的事实，在光产生层产生的热量更有效地消散。