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1.发明授权公开(公告)号：US07372886B2
公开(公告)日：2008-05-13
申请号：US10862753
申请日：2004-06-07
CPC分类号： H01S5/02461 , H01S5/0425 , H01S5/18308 , H01S5/18327
摘要： A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced at the light generation layer is more efficiently dissipated due to the presence of the HTC layer. Alternatively, a light generating device such as a VCSEL includes a light generation layer, a top reflector, and a high thermal conductivity (HTC) bottom reflector. Heat produced at the light generation layer is more efficiently dissipated due to the fact that the bottom reflector is a HTC DBR reflector having lower thermal resistivity than a conventional DBR reflector.
摘要翻译： 诸如VCSEL的发光装置在光产生层和底部反射器之间包括光产生层，顶部反射器，底部反射器和高热导率（HTC）层。 光产生层适于产生具有第一波长的光。 由于HTC层的存在，在光产生层产生的热更有效地消散。 或者，诸如VCSEL的发光装置包括光产生层，顶反射器和高热导率（HTC）底反射器。 由于底部反射器是具有比常规DBR反射器低的热电阻率的HTC DBR反射器的事实，在光产生层产生的热量更有效地消散。
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公开(公告)号：US06765238B2
公开(公告)日：2004-07-20
申请号：US10243520
申请日：2002-09-12
IPC分类号： H01L2988
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S5/34306 , Y10S257/918
摘要： The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
摘要翻译： 隧道结结构包括第一半导体材料的p型隧道结层，第二半导体材料的n型隧道结层和隧道结层之间的隧道结。 至少一种半导体材料包括镓（Ga），砷（As）和氮（N）或锑（Sb）。 通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。
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公开(公告)号：US07215848B2
公开(公告)日：2007-05-08
申请号：US10768858
申请日：2004-01-29
IPC分类号： G02B6/26
CPC分类号： G02B6/29335 , G02B6/12007 , G02B6/2746 , G02B2006/12097 , G02B2006/12104 , G02F1/0955 , G02F2203/15
摘要： An optical isolator for coupling light from a first waveguide to a second waveguide is disclosed. The optical isolator utilizes a resonator coupled to the first and second optical waveguides. The resonator has a resonance at λ for light traveling from the first optical waveguide to the second optical waveguide; however, the resonator does not have a resonance at λ for light traveling from the second waveguide to the first waveguide. The resonator can use a layer of ferromagnetic material in an applied magnetic field. The magnetic field within the ferromagnetic material varies in strength and/or direction over the layer of ferromagnetic material. The magnetic field can be generated by an external magnetic field that varies over the layer of ferromagnetic material. Alternatively, the resonator can include a layer of ferromagnetic metal that overlies a portion of the layer of ferromagnetic material and a constant external magnetic field.
摘要翻译： 公开了一种用于将来自第一波导的光耦合到第二波导的光隔离器。 光隔离器利用耦合到第一和第二光波导的谐振器。 谐振器对于从第一光波导到第二光波导的光的λ具有谐振; 然而，对于从第二波导传播到第一波导的光，谐振器在λ处不具有谐振。 谐振器可以在施加的磁场中使用铁磁材料层。 铁磁材料内的磁场在铁磁材料层上的强度和/或方向上变化。 磁场可以由在铁磁材料层上变化的外部磁场产生。 或者，谐振器可以包括铁磁金属层，其覆盖铁磁材料层的一部分和恒定的外部磁场。
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公开(公告)号：US07034331B2
公开(公告)日：2006-04-25
申请号：US10861144
申请日：2004-06-04
IPC分类号： H01L29/06
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S5/34306 , Y10S257/918
摘要： The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
摘要翻译： 隧道结结构包括第一半导体材料的p型隧道结层，第二半导体材料的n型隧道结层和隧道结层之间的隧道结。 至少一种半导体材料包括镓（Ga），砷（As）和氮（N）或锑（Sb）。 通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。
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5.发明授权Light-emitting device having element(s) for increasing the effective carrier capture cross-section of quantum wells 有权具有用于增加量子阱的有效载流子捕获截面的元件的发光器件公开(公告)号：US06878970B2
公开(公告)日：2005-04-12
申请号：US10418408
申请日：2003-04-17
申请人： David P. Bour , Michael H. Leary , Ying-Lan Chang , Yoon-Kyu Song , Michael R. T. Tan , Tetsuya Takeuchi , Danielle Chamberlin
发明人： David P. Bour , Michael H. Leary , Ying-Lan Chang , Yoon-Kyu Song , Michael R. T. Tan , Tetsuya Takeuchi , Danielle Chamberlin
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/105
摘要： Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.
摘要翻译： 描述发光器件。 发光器件的一个示例包括第一阻挡层和第二阻挡层，以及位于第一和第二阻挡层之间的量子阱层。 第一和第二阻挡层由砷化镓构成，量子阱层由氮化铟镓组成。 第一层位于量子阱层和第一阻挡层之间。 第一层在第一阻挡层和量子阱层的能隙之间具有带隙能。 发光器件的另一示例包括量子阱和邻近量子阱的载流子俘获元件。 载体捕获元素增加量子阱的有效载流子俘获截面。
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公开(公告)号：US07977702B2
公开(公告)日：2011-07-12
申请号：US11592486
申请日：2006-11-02
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/22 , H01L2933/0091
摘要： A light-emitting device that includes an LED and a light extraction layer and the method for making the same are disclosed. The LED includes a substrate on which an active layer is sandwiched between a p-type layer and an n-type layer, the active layer generating light in a band of wavelengths about a central wavelength when holes and electrons recombine therein. The n-type layer, active layer, and p-type layer are formed on the substrate. First and second electrodes for providing a potential difference between the p-type layer and the n-type layer are included in the LED. The light extraction layer includes a clear layer of material having a first surface in contact with a surface of the LED and a second surface having light scattering features with dimensions greater than 0.5 times the central wavelength. The material of the clear layer can be polycrystalline or amorphous.
摘要翻译： 公开了一种包括LED和光提取层的发光器件及其制造方法。 LED包括其上有活性层夹在p型层和n型层之间的衬底，当空穴和电子在其中复合时，有源层在波长为中心波长的波长带中产生光。 在衬底上形成n型层，有源层和p型层。 用于在p型层和n型层之间提供电位差的第一和第二电极包括在LED中。 光提取层包括具有与LED的表面接触的第一表面的透明材料层和具有大于中心波长的0.5倍的光散射特征的第二表面。 透明层的材料可以是多晶的或无定形的。
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公开(公告)号：US06813295B2
公开(公告)日：2004-11-02
申请号：US10106678
申请日：2002-03-25
IPC分类号： H01S500
CPC分类号： H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S2304/04
摘要： Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.
摘要翻译： 提出了使用MOCVD工艺制造的各种非对称InGaAsN VCSEL结构。 使用不对称结构有效地消除了量子阱活性区域的铝污染。
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公开(公告)号：US06764926B2
公开(公告)日：2004-07-20
申请号：US10106472
申请日：2002-03-25
申请人： Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan , Andy Luan
发明人： Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan , Andy Luan
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C23C16/301 , C23C16/4401 , C23C16/4405 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/02579 , H01L21/0262
摘要： A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.
摘要翻译： 提出了一种制造高品质InGaAsN半导体器件的方法。 该方法允许使用单个MOCVD反应器制造高质量的InGaAsN半导体器件，同时避免铝污染。
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公开(公告)号：US06847491B1
公开(公告)日：2005-01-25
申请号：US09672159
申请日：2000-09-27
CPC分类号： G02B6/4212 , G02B3/0006 , G02B3/0012 , G02B6/4204 , G02B6/4207
摘要： The disclosed hybrid microlens enables the economical production of large diameter, high numerical aperture refractive microlens by microfabrication. The hybrid microlens has a combination of a refractive microlens formed on a thin layer of high index material such as silicon and a spacer layer of a low index material such as fused silica. Advantages include substantially reduced lens sag, fast etching of the microlens, small wafer stack thickness, large diffraction angle in the low index spacer, large optical beam diameter, high optical performance, and low cost.Also disclosed is a design for substantially reduced optical return signal and small polarization dependent optical loss from an optical fiber which is perpendicular to and butt-coupled to a planar optical surface. This design is to form a small slanted surface on the planar optical surface in the vicinity of the optical fiber core and fill the space between the fiber and the slanted surface with an index-matching optical epoxy.
摘要翻译： 所公开的混合微透镜可通过微细加工经济地生产大直径，高数值孔径折射微透镜。 混合微透镜具有形成在诸如硅的高折射率材料的薄层上的屈光微透镜和诸如熔融二氧化硅的低折射率材料的间隔层的组合。 优点包括：实质上减小的透镜凹陷，微透镜的快速蚀刻，小的晶片堆叠厚度，低折射率间隔物中的大的衍射角，大的光束直径，高的光学性能和低的成本。还公开了一种基本上减小光学返回的设计 来自与平面光学表面垂直并对接耦合的光纤的信号和小偏振相关的光学损耗。 该设计是在光纤芯附近的平面光学表面上形成小的倾斜表面，并用折射率匹配光学环氧树脂填充纤维和倾斜表面之间的空间。
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公开(公告)号：US06947217B2
公开(公告)日：2005-09-20
申请号：US10022757
申请日：2001-12-14
CPC分类号： H01S5/18341 , H01S5/18308 , H01S5/18363
摘要： A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.
摘要翻译： 分布式布拉格反射器及其制造方法包括用于支撑间隙以防止塌陷的支撑件。 该方法包括在衬底上形成多个交替结构和牺牲层。 将结构和牺牲层刻蚀成从衬底突出的至少一个台面。 在至少一个台面上形成支撑层，留下结构的一部分和暴露的牺牲层。 暴露的牺牲层中的至少一个的至少一部分从结构层之间被蚀刻，以在结构层之间形成间隙。
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