公开(公告)号：US07611926B2

公开(公告)日：2009-11-03

申请号：US12040775

申请日：2008-02-29

申请人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

发明人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

IPC分类号： H01L21/58 ,  H01L23/14

CPC分类号： H01L24/83 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/05599 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83885 ,  H01L2224/85001 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/0635 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

摘要翻译： 本发明的热固性芯片接合薄膜是用于制造半导体器件的热固性芯片接合薄膜，其以主要成分为5〜15重量％的热塑性树脂成分和45〜55重量％的热硬化性树脂 并且在热固化膜之前，在100℃下具有400Pa.s以上且2500Pa·s以下的熔融粘度。

公开(公告)号：US08592260B2

公开(公告)日：2013-11-26

申请号：US12492641

申请日：2009-06-26

申请人： Masami Oikawa ,  Takeshi Matsumura ,  Sadahito Misumi

发明人： Masami Oikawa ,  Takeshi Matsumura ,  Sadahito Misumi

IPC分类号： H01L21/50

CPC分类号： H01L24/27 ,  C09J5/06 ,  C09J163/00 ,  C09J2463/00 ,  H01L21/565 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/27436 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29386 ,  H01L2224/29387 ,  H01L2224/29393 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48221 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83097 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2224/83907 ,  H01L2224/85207 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05432 ,  H01L2924/0532 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： The process for producing a semiconductor device of the invention is a process for producing a semiconductor device, comprising: a temporarily bonding step of bonding a semiconductor element temporarily on an adherend through an adhesive sheet, a semi-curing step of heating the adhesive sheet under predetermined conditions, thereby turning the sheet into a semi-cured state that the shearing adhering strength of the sheet to the adherend is 0.5 MPa or more, and a wire bonding step of causing the semiconductor element to undergo wire bonding in the state that the adhesive sheet is semi-cured.

摘要翻译： 本发明的半导体装置的制造方法是一种半导体装置的制造方法，其特征在于，包括：将半导体元件通过粘合片临时接合在被粘物上的暂时接合工序;将半导体装置 从而将片材转化为片材与被粘物的剪切粘合强度为0.5MPa以上的半固化状态，以及在粘合剂的状态下使半导体元件进行引线接合的引线接合工序 片材半固化。

公开(公告)号：US20100330745A1

公开(公告)日：2010-12-30

申请号：US12492641

申请日：2009-06-26

申请人： Masami Oikawa ,  Takeshi Matsumura ,  Sadahito Misumi

发明人： Masami Oikawa ,  Takeshi Matsumura ,  Sadahito Misumi

IPC分类号： H01L21/50

CPC分类号： H01L24/27 ,  C09J5/06 ,  C09J163/00 ,  C09J2463/00 ,  H01L21/565 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/27436 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29386 ,  H01L2224/29387 ,  H01L2224/29393 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48221 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83097 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2224/83907 ,  H01L2224/85207 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05432 ,  H01L2924/0532 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： The process for producing a semiconductor device of the invention is a process for producing a semiconductor device, comprising: a temporarily bonding step of bonding a semiconductor element temporarily on an adherend through an adhesive sheet, a semi-curing step of heating the adhesive sheet under predetermined conditions, thereby turning the sheet into a semi-cured state that the shearing adhering strength of the sheet to the adherend is 0.5 MPa or more, and a wire bonding step of causing the semiconductor element to undergo wire bonding in the state that the adhesive sheet is semi-cured.

摘要翻译： 本发明的半导体装置的制造方法是一种半导体装置的制造方法，其特征在于，包括：将半导体元件通过粘合片临时接合在被粘物上的暂时接合工序;将半导体装置 从而将片材转化为片材与被粘物的剪切粘合强度为0.5MPa以上的半固化状态，以及在粘合剂的状态下使半导体元件进行引线接合的引线接合工序 片材半固化。

公开(公告)号：US20080213943A1

公开(公告)日：2008-09-04

申请号：US12040775

申请日：2008-02-29

申请人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

发明人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

IPC分类号： H01L21/58 ,  H01B1/12

CPC分类号： H01L24/83 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/05599 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83885 ,  H01L2224/85001 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/0635 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

摘要翻译： 本发明的热固性芯片接合薄膜是用于制造半导体器件的热固性芯片接合薄膜，其以主要成分为5〜15重量％的热塑性树脂成分和45〜55重量％的热硬化性树脂 并且在热固化膜之前，在100℃下具有400Pa.s以上且2500Pa·s以下的熔融粘度。

公开(公告)号：US08580617B2

公开(公告)日：2013-11-12

申请号：US13365071

申请日：2012-02-02

申请人： Yuki Sugo ,  Sadahito Misumi ,  Takeshi Matsumura

发明人： Yuki Sugo ,  Sadahito Misumi ,  Takeshi Matsumura

IPC分类号： B32B27/38 ,  B32B37/00 ,  C08L63/00

CPC分类号： H01L21/6836 ,  C08G59/621 ,  C08L33/06 ,  C08L2666/04 ,  C09J163/00 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/29 ,  H01L2224/29084 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/85001 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/3025 ,  Y10T428/31511 ,  H01L2924/0635 ,  H01L2924/066 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/05442 ,  H01L2924/0532 ,  H01L2924/05432 ,  H01L2924/05032 ,  H01L2924/0503 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： The thermosetting die-bonding film of the present invention is used in manufacturing a semiconductor device, has at least an epoxy resin, a phenol resin, and an acrylic copolymer, and the ratio X/Y is 0.7 to 5 when X represents a total weight of the epoxy resin and the phenol resin and Y represents a weight of the acrylic copolymer.

摘要翻译： 本发明的热固性芯片接合薄膜用于制造半导体器件，至少具有环氧树脂，酚醛树脂和丙烯酸共聚物，当X表示总重量时，X / Y的比率为0.7〜5 的环氧树脂和酚醛树脂，Y表示丙烯酸共聚物的重量。

公开(公告)号：US20110147952A1

公开(公告)日：2011-06-23

申请号：US12983821

申请日：2011-01-03

申请人： Takeshi Matsumura ,  Masaki Mizutani ,  Sadahito Misumi

发明人： Takeshi Matsumura ,  Masaki Mizutani ,  Sadahito Misumi

IPC分类号： H01L23/52 ,  H01L21/50

CPC分类号： H01L21/6836 ,  C09J7/20 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2201/61 ,  C09J2203/326 ,  C09J2205/31 ,  C09J2433/00 ,  H01L24/27 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/3512

摘要： The invention relates to a dicing die-bonding film having a pressure-sensitive adhesive layer (2) on a substrate material (1) and a die-bonding adhesive layer (3) on the pressure-sensitive adhesive layer (2), wherein the adhesion of the pressure-sensitive adhesive layer (2) to the die-bonding adhesive layer (3), as determined under the conditions of a peel angle of 15° and a peel point moving rate of 2.5 mm/sec. at 23° C., is different between a region (2a) corresponding to a work attachment region (3a) and a region (2b) corresponding to a part or the whole of the other region (3b), in the die-bonding adhesive layer (3), and satisfies the following relationship: adhesion of the pressure-sensitive adhesive layer (2a)

摘要翻译： 本发明涉及一种在基材（1）上具有压敏粘合剂层（2）和压敏粘合剂层（2）上的芯片粘合层（3）的切割芯片接合膜，其中 在剥离角度为15°，剥离移动速度为2.5mm / sec的条件下测定粘合剂层（2）与芯片粘接层（3）的粘合性。 在相对于工件附着区域（3a）的区域（2a）和与其他区域（3b）的一部分或全部对应的区域（2b）在23℃下不同，在芯片接合粘合剂 层（3），并且满足以下关系：粘合剂层（2a）的粘合性<粘合剂层（2b）的粘合性和粘合剂层（2a）对粘合剂层 芯片粘合层（3）不高于2.3N / 25mm。

公开(公告)号：US07772040B2

公开(公告)日：2010-08-10

申请号：US11853743

申请日：2007-09-11

申请人： Sadahito Misumi ,  Takeshi Matsumura ,  Kazuhito Hosokawa ,  Hiroyuki Kondo

发明人： Sadahito Misumi ,  Takeshi Matsumura ,  Kazuhito Hosokawa ,  Hiroyuki Kondo

IPC分类号： H01L21/00

CPC分类号： H01L25/0657 ,  H01L23/293 ,  H01L24/73 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3011 ,  Y10T428/1462 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention includes a temporary fixing step of temporarily fixing a semiconductor element on an adherend interposing an adhesive sheet therebetween, a wire-bonding step of bonding wires to the semiconductor element, and a step of sealing the semiconductor element with a sealing resin, and in which the loss elastic modulus of the adhesive sheet at 175° C. is 2000 Pa or more.

摘要翻译： 本发明包括临时固定步骤，将半导体元件临时固定在粘合片之间的粘附片上，将导线接合到半导体元件的引线键合步骤以及用密封树脂密封半导体元件的步骤，以及 其中粘合片在175℃下的损耗弹性模量为2000Pa以上。

公开(公告)号：US20100197080A1

公开(公告)日：2010-08-05

申请号：US12759470

申请日：2010-04-13

申请人： Takeshi Matsumura ,  Sadahito Misumi ,  Kazuhito Hosokawa ,  Hiroyuki Kondo

发明人： Takeshi Matsumura ,  Sadahito Misumi ,  Kazuhito Hosokawa ,  Hiroyuki Kondo

IPC分类号： H01L21/60 ,  H01L21/56

CPC分类号： H01L24/83 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L24/98 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29386 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/85205 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/3011 ,  H01L2924/0635 ,  H01L2924/066 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05432 ,  H01L2924/0532 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： The adhesive sheet for manufacturing a semiconductor device is an adhesive sheet for manufacturing a semiconductor device used when a semiconductor element is adhered to an adherend and the semiconductor element is wire-bonded, and is a peelable adhesive sheet in which the 180 degree peeling adhesive strength against a silicon wafer is 5 (N/25 mm width) or less.

摘要翻译： 用于制造半导体器件的粘合片是用于制造半导体器件的粘合片，当将半导体元件粘合到被粘物并且半导体元件被引线接合时使用，并且是可剥离的粘合片，其中180度剥离粘合强度 相对于硅晶片为5（N / 25mm宽）或更小。

公开(公告)号：US20100019365A1

公开(公告)日：2010-01-28

申请号：US12440495

申请日：2006-09-12

申请人： Takeshi Matsumura ,  Sadahito Misumi

发明人： Takeshi Matsumura ,  Sadahito Misumi

IPC分类号： H01L23/00 ,  H01L21/301 ,  C09J7/00

CPC分类号： H01L24/83 ,  C09J7/20 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2201/61 ,  C09J2203/326 ,  C09J2205/31 ,  C09J2433/00 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3142 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/85 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29386 ,  H01L2224/29393 ,  H01L2224/48 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/85 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/3025 ,  Y10T428/26 ,  H01L2924/0675 ,  H01L2924/0635 ,  H01L2924/066 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/05432 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The invention relates to a dicing die-bonding film having a pressure-sensitive adhesive layer and a die bonding adhesive layer being sequentially laminated on a supporting substrate, wherein said pressure-sensitive adhesive layer has a thickness of 10 to 80 μm, and has a storage elastic modulus at 23° C. of 1×104 to 1×1010 Pa.

摘要翻译： 本发明涉及一种具有压敏粘合剂层和芯片接合粘合剂层的切割芯片接合膜，其顺序层压在支撑基板上，其中所述压敏粘合剂层的厚度为10至80μm，并且具有 在23℃下的储能弹性模量为1×10 4至1​​×10 10 Pa。

公开(公告)号：US08304341B2

公开(公告)日：2012-11-06

申请号：US12983821

申请日：2011-01-03

申请人： Takeshi Matsumura ,  Masaki Mizutani ,  Sadahito Misumi

发明人： Takeshi Matsumura ,  Masaki Mizutani ,  Sadahito Misumi

IPC分类号： H01L21/4763

CPC分类号： H01L21/6836 ,  C09J7/20 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2201/61 ,  C09J2203/326 ,  C09J2205/31 ,  C09J2433/00 ,  H01L24/27 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/3512

摘要： The invention relates to a dicing die-bonding film having a pressure-sensitive adhesive layer (2) on a substrate material (1) and a die-bonding adhesive layer (3) on the pressure-sensitive adhesive layer (2), wherein the adhesion of the pressure-sensitive adhesive layer (2) to the die-bonding adhesive layer (3), as determined under the conditions of a peel angle of 15° and a peel point moving rate of 2.5 mm/sec. at 23° C., is different between a region (2a) corresponding to a work attachment region (3a) and a region (2b) corresponding to a part or the whole of the other region (3b), in the die-bonding adhesive layer (3), and satisfies the following relationship: adhesion of the pressure-sensitive adhesive layer (2a)

摘要翻译： 本发明涉及一种在基材（1）上具有压敏粘合剂层（2）和压敏粘合剂层（2）上的芯片粘合层（3）的切割芯片接合膜，其中 在剥离角度为15°，剥离移动速度为2.5mm / sec的条件下测定粘合剂层（2）与芯片粘接层（3）的粘合性。 在相对于工件附着区域（3a）的区域（2a）和与其他区域（3b）的一部分或全部对应的区域（2b）在23℃下不同，在芯片接合粘合剂 层（3），并且满足以下关系：粘合剂层（2a）的粘合性<粘合剂层（2b）的粘合性和粘合剂层（2a）对粘合剂层 芯片粘合层（3）不高于2.3N / 25mm。