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公开(公告)号:US08592260B2
公开(公告)日:2013-11-26
申请号:US12492641
申请日:2009-06-26
IPC分类号: H01L21/50
CPC分类号: H01L24/27 , C09J5/06 , C09J163/00 , C09J2463/00 , H01L21/565 , H01L21/6836 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2224/27436 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29311 , H01L2224/29316 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29371 , H01L2224/29386 , H01L2224/29387 , H01L2224/29393 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48221 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83097 , H01L2224/83191 , H01L2224/83856 , H01L2224/83907 , H01L2224/85207 , H01L2224/92247 , H01L2224/94 , H01L2225/0651 , H01L2225/06575 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/3011 , H01L2924/00014 , H01L2224/03 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/05442 , H01L2924/05432 , H01L2924/0532 , H01L2924/04642 , H01L2924/05042 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要: The process for producing a semiconductor device of the invention is a process for producing a semiconductor device, comprising: a temporarily bonding step of bonding a semiconductor element temporarily on an adherend through an adhesive sheet, a semi-curing step of heating the adhesive sheet under predetermined conditions, thereby turning the sheet into a semi-cured state that the shearing adhering strength of the sheet to the adherend is 0.5 MPa or more, and a wire bonding step of causing the semiconductor element to undergo wire bonding in the state that the adhesive sheet is semi-cured.
摘要翻译: 本发明的半导体装置的制造方法是一种半导体装置的制造方法,其特征在于,包括:将半导体元件通过粘合片临时接合在被粘物上的暂时接合工序;将半导体装置 从而将片材转化为片材与被粘物的剪切粘合强度为0.5MPa以上的半固化状态,以及在粘合剂的状态下使半导体元件进行引线接合的引线接合工序 片材半固化。
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公开(公告)号:US07611926B2
公开(公告)日:2009-11-03
申请号:US12040775
申请日:2008-02-29
申请人: Naohide Takamoto , Sadahito Misumi , Takeshi Matsumura , Yasuhiro Amano , Masami Oikawa , Tsubasa Miki
发明人: Naohide Takamoto , Sadahito Misumi , Takeshi Matsumura , Yasuhiro Amano , Masami Oikawa , Tsubasa Miki
CPC分类号: H01L24/83 , H01L21/6836 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/0657 , H01L2221/68327 , H01L2224/05599 , H01L2224/274 , H01L2224/2919 , H01L2224/29198 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/83855 , H01L2224/83885 , H01L2224/85001 , H01L2224/85099 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06575 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/0635 , H01L2224/78 , H01L2924/00 , H01L2924/3512 , H01L2924/00012
摘要: The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.
摘要翻译: 本发明的热固性芯片接合薄膜是用于制造半导体器件的热固性芯片接合薄膜,其以主要成分为5〜15重量%的热塑性树脂成分和45〜55重量%的热硬化性树脂 并且在热固化膜之前,在100℃下具有400Pa.s以上且2500Pa·s以下的熔融粘度。
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公开(公告)号:US06400461B1
公开(公告)日:2002-06-04
申请号:US09300397
申请日:1999-04-27
申请人: Masami Oikawa
发明人: Masami Oikawa
IPC分类号: G06K1500
CPC分类号: G06K15/16 , G06K2215/0085 , G06K2215/0088
摘要: In a case where the control operation for feeding paper on the front surface of which an image is printed without waiting for completion of the feeding of a document is effected by use of an automatic document feeding device and double face printer, whether or not the image is correctly printed on the front surface of the stacked paper is stored in a stack table when the paper is stacked in the double face printer and the paper on which the image is not correctly printed based on the contents of the status table is discharged when an image is printed on the rear surface of the paper. Thus, the printing result in which the relation between the pages of the front and rear surfaces of the sheets of paper on which plural pages of images are printed by double face printing is the same as in the normal case can be attained and the paper which is not correctly printed can be easily distinguished.
摘要翻译: 在使用自动文件馈送装置和双面打印机的情况下,通过使用自动文件馈送装置和双面打印机来进行用于在打印图像的前表面上进给纸张的控制操作而不等待文件的馈送完成的情况下, 当纸张堆叠在双面打印机中时,正确打印在堆叠纸张的正面上的纸张被存储在堆叠台中,并且当状态表的内容被排除时,基于状态表的内容而放映图像的纸张被排出 图像打印在纸张的后表面上。 因此,可以获得其中通过双面打印印刷多页图像的纸张的正面和背面之间的关系与正常情况相同的打印结果,并且可以获得纸 没有正确打印可以很容易地区分。
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公开(公告)号:US20100330745A1
公开(公告)日:2010-12-30
申请号:US12492641
申请日:2009-06-26
IPC分类号: H01L21/50
CPC分类号: H01L24/27 , C09J5/06 , C09J163/00 , C09J2463/00 , H01L21/565 , H01L21/6836 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2224/27436 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29311 , H01L2224/29316 , H01L2224/29318 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29371 , H01L2224/29386 , H01L2224/29387 , H01L2224/29393 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48221 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83097 , H01L2224/83191 , H01L2224/83856 , H01L2224/83907 , H01L2224/85207 , H01L2224/92247 , H01L2224/94 , H01L2225/0651 , H01L2225/06575 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/3011 , H01L2924/00014 , H01L2224/03 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/05442 , H01L2924/05432 , H01L2924/0532 , H01L2924/04642 , H01L2924/05042 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要: The process for producing a semiconductor device of the invention is a process for producing a semiconductor device, comprising: a temporarily bonding step of bonding a semiconductor element temporarily on an adherend through an adhesive sheet, a semi-curing step of heating the adhesive sheet under predetermined conditions, thereby turning the sheet into a semi-cured state that the shearing adhering strength of the sheet to the adherend is 0.5 MPa or more, and a wire bonding step of causing the semiconductor element to undergo wire bonding in the state that the adhesive sheet is semi-cured.
摘要翻译: 本发明的半导体装置的制造方法是一种半导体装置的制造方法,其特征在于,包括:将半导体元件通过粘合片临时接合在被粘物上的暂时接合工序;将半导体装置 从而将片材转化为片材与被粘物的剪切粘合强度为0.5MPa以上的半固化状态,以及在粘合剂的状态下使半导体元件进行引线接合的引线接合工序 片材半固化。
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公开(公告)号:US20080213943A1
公开(公告)日:2008-09-04
申请号:US12040775
申请日:2008-02-29
申请人: Naohide Takamoto , Sadahito Misumi , Takeshi Matsumura , Yasuhiro Amano , Masami Oikawa , Tsubasa Miki
发明人: Naohide Takamoto , Sadahito Misumi , Takeshi Matsumura , Yasuhiro Amano , Masami Oikawa , Tsubasa Miki
CPC分类号: H01L24/83 , H01L21/6836 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/0657 , H01L2221/68327 , H01L2224/05599 , H01L2224/274 , H01L2224/2919 , H01L2224/29198 , H01L2224/2929 , H01L2224/293 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/83855 , H01L2224/83885 , H01L2224/85001 , H01L2224/85099 , H01L2224/85205 , H01L2224/85399 , H01L2225/0651 , H01L2225/06575 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/15747 , H01L2924/15788 , H01L2924/181 , H01L2924/20102 , H01L2924/20103 , H01L2924/20104 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/0635 , H01L2224/78 , H01L2924/00 , H01L2924/3512 , H01L2924/00012
摘要: The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.
摘要翻译: 本发明的热固性芯片接合薄膜是用于制造半导体器件的热固性芯片接合薄膜,其以主要成分为5〜15重量%的热塑性树脂成分和45〜55重量%的热硬化性树脂 并且在热固化膜之前,在100℃下具有400Pa.s以上且2500Pa·s以下的熔融粘度。
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