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    PATTERNING PROCESS AND RESIST COMPOSITION
    2.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 有权
    绘图工艺和耐腐蚀组合物

    公开(公告)号：US20100304297A1

    公开(公告)日：2010-12-02

    申请号：US12787823

    申请日：2010-05-26

    申请人： Jun HATAKEYAMA ,  Kazuhiro KATAYAMA ,  Youichi OHSAWA ,  Masaki OHASHI

    发明人： Jun HATAKEYAMA ,  Kazuhiro KATAYAMA ,  Youichi OHSAWA ,  Masaki OHASHI

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/70466 ,  G03F7/0035 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/38 ,  G03F7/40 ,  Y10S430/108 ,  Y10S430/111

    摘要： A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.

    摘要翻译： 通过将包含基础树脂，光致酸发生剂和基底发生器的第一正型抗蚀剂组合物涂覆在基材上以形成第一抗蚀剂膜，图案曝光，PEB和显影以形成第一抗蚀剂图案，形成图案，加热 第一抗蚀剂图案，用于使基底发生器产生用于使图案失去酸的碱，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂覆到第一抗蚀剂图案衬底上以形成第二抗蚀剂图案 抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。

    DOUBLE PATTERNING PROCESS
    3.
    发明申请
    DOUBLE PATTERNING PROCESS 有权
    双重图案处理

    公开(公告)号：US20090253084A1

    公开(公告)日：2009-10-08

    申请号：US12418090

    申请日：2009-04-03

    申请人： Katsuya TAKEMURA ,  Jun HATAKEYAMA ,  Kazumi NODA ,  Mutsuo NAKASHIMA ,  Masaki OHASHI ,  Toshinobu ISHIHARA

    发明人： Katsuya TAKEMURA ,  Jun HATAKEYAMA ,  Kazumi NODA ,  Mutsuo NAKASHIMA ,  Masaki OHASHI ,  Toshinobu ISHIHARA

    IPC分类号： G03F7/00

    CPC分类号： G03F7/0035 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/40

    摘要： Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.

    摘要翻译： 通过涂覆化学放大的正性抗蚀剂组合物形成双重图案，所述正性抗蚀剂组合物包含含酸不稳定基团的树脂和光致酸发生剂和预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能量辐射，PEB和显影 用碱性显影剂形成正的抗蚀剂图案，将正性抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆负性抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能辐射PEB， 并用碱性显影剂显影以形成负的抗蚀剂图案。 最后的显影步骤包括将已被转化为可溶于显影剂的正性抗蚀图案溶解的反转移步骤。

    MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    4.
    发明申请
    MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    单体，耐性组合物和方法

    公开(公告)号：US20090226843A1

    公开(公告)日：2009-09-10

    申请号：US12398483

    申请日：2009-03-05

    申请人： Jun HATAKEYAMA ,  Takeshi KINSHO ,  Masaki OHASHI ,  Kazuhiro KATAYAMA

    发明人： Jun HATAKEYAMA ,  Takeshi KINSHO ,  Masaki OHASHI ,  Kazuhiro KATAYAMA

    IPC分类号： G03F7/20 ,  G03F7/004 ,  C08F120/10

    CPC分类号： G03F7/40 ,  G03F7/0046 ,  G03F7/0397

    摘要： A pattern is formed by applying a positive resist composition comprising a polymer comprising hydroxyalkylnaphthalene-bearing recurring units and acid labile group-bearing recurring units onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer to form a first pattern, and causing the resist film to crosslink and cure with the aid of heat or of acid and heat. A second pattern is then formed in the space area of the first pattern. The double patterning process reduces the pitch between patterns to one half.

    摘要翻译： 通过将包含含有羟烷基萘的重复单元和含酸不稳定基团的重复单元的聚合物的正性抗蚀剂组合物应用到基材上以形成抗蚀剂膜，将抗蚀剂膜热处理和曝光以进行辐射，热处理和显影而形成图案 所述抗蚀剂膜具有显影剂以形成第一图案，并且使得所述抗蚀剂膜在热或酸和热的帮助下交联和固化。 然后在第一图案的空间区域中形成第二图案。 双重图案化工艺将图案之间的间距缩小到一半。

    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    7.
    发明申请
    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    含硫酸钠聚合物，耐腐蚀组合物和图案处理

    公开(公告)号：US20090269696A1

    公开(公告)日：2009-10-29

    申请号：US12428933

    申请日：2009-04-23

    申请人： Youichi OHSAWA ,  Jun HATAKEYAMA ,  Seiichiro TACHIBANA ,  Takeshi KINSHO

    发明人： Youichi OHSAWA ,  Jun HATAKEYAMA ,  Seiichiro TACHIBANA ,  Takeshi KINSHO

    IPC分类号： G03F7/20 ,  C08F214/18 ,  G03F7/004

    CPC分类号： G03F7/0045 ,  C08F220/18 ,  C08F220/28 ,  C08F220/30 ,  C08F220/38 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/143 ,  Y10S430/167

    摘要： A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.

    摘要翻译： 提供了包含具有式（1），（2）和（3）的重复单元的聚合物以及包含其的化学放大抗蚀剂组合物。 R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或C 2 F 5，A是任选氟或氧取代的二价有机基团，R 2，R 3和R 4是烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基 或者可以与硫原子形成环，N = O-2，R 8是H或烷基，B是单键或任选的氧取代的二价有机基团，a = 0-3，b = 1-3，和 X是酸不稳定组。 该聚合物产生强的磺酸，其提供化学增强抗蚀剂组合物中酸不稳定基团的有效切割。

    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
    8.
    发明申请
    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
    积极的组合和绘图过程

    公开(公告)号：US20130056653A1

    公开(公告)日：2013-03-07

    申请号：US13584463

    申请日：2012-08-13

    申请人： Jun HATAKEYAMA ,  Daisuke KORI

    发明人： Jun HATAKEYAMA ,  Daisuke KORI

    IPC分类号： G03F7/004 ,  G21K5/00 ,  G03F7/20

    CPC分类号： G03F7/0397 ,  G03F7/085

    摘要： The invention provides a positive resist composition comprising, as base resins contained therein, (A) a polymer having a weight-average molecular weight of 1000 to 500000 and containing a repeating unit which contains a structure having a hydrogen atom of a carboxyl group thereof substituted with an acid-labile group having a cyclic structure and (B) a novolak resin of a substituted or an unsubstituted naphtholphthalein, and in addition, a photo acid generator. There can be provided a positive resist composition having an appropriate absorption to form a pattern on a highly reflective substrate, excellent characteristics in adhesion and implantation onto a non-planar substrate, a good pattern profile after light exposure, and an ion implantation resistance at the time of ion implantation; and a patterning process.

    摘要翻译： 本发明提供一种正型抗蚀剂组合物，其包含作为其中所含的基础树脂的（A）重均分子量为1000〜500000的聚合物，其含有具有取代基的羧基的氢原子的结构的重复单元 具有环状结构的酸不稳定基团和（B）取代或未取代的萘并噻吩的酚醛清漆树脂，另外还有光酸产生剂。 可以提供具有适当吸收的正性抗蚀剂组合物，以在高反射性基板上形成图案，在非平面基板上粘附和注入的优异特性，曝光后的良好图案轮廓，以及在 离子注入时间; 和图案化过程。

    PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN
    10.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN 有权
    使用的方法及其组合物

    公开(公告)号：US20090087786A1

    公开(公告)日：2009-04-02

    申请号：US12204400

    申请日：2008-09-04

    申请人： Jun HATAKEYAMA

    发明人： Jun HATAKEYAMA

    IPC分类号： G03C1/053 ,  G03F7/20

    CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2024

    摘要： A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern, the first positive resist composition comprising a polymer having copolymerized recurring units having naphthol and recurring units with an alkaline solubility that increases under the action of acid; causing the first resist coating to crosslink and cure by irradiation of high-energy radiation of sub-200 nm wavelength; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.

    摘要翻译： 通过将第一正性抗蚀剂组合物施加到基材上，热处理，曝光，热处理和显影以形成第一抗蚀剂图案形成图案，第一正性抗蚀剂组合物包含具有共聚的具有萘酚的重复单元的聚合物和具有萘酚的重复单元 在酸的作用下碱性溶解度增加; 使得第一抗蚀剂涂层通过辐射200nm以下的高能量辐射而交联和固化; 进一步将第二正性抗蚀剂组合物施加到基材上，进行热处理，曝光，热处理和显影以形成第二抗蚀剂图案。 双重图案化工艺将图案之间的间距缩小到一半。