公开(公告)号：US08481863B2

公开(公告)日：2013-07-09

申请号：US12061203

申请日：2008-04-02

申请人： Akinori Shiraishi ,  Kei Murayama ,  Masahiro Sunohara ,  Naoyuki Koizumi ,  Mitsutoshi Higashi

发明人： Akinori Shiraishi ,  Kei Murayama ,  Masahiro Sunohara ,  Naoyuki Koizumi ,  Mitsutoshi Higashi

IPC分类号： H05K1/16 ,  H05K1/11 ,  H01K3/10

CPC分类号： H05K1/116 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/055 ,  H01L23/13 ,  H01L23/49827 ,  H01L24/97 ,  H01L33/483 ,  H01L2224/16 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/16195 ,  H05K3/423 ,  H05K3/426 ,  H05K2201/09036 ,  H05K2201/09045 ,  H05K2201/09481 ,  H05K2201/09563 ,  H05K2203/1147 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49165 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/0401

摘要： A substrate includes a storage portion which is defined by a base for mounting a light emitting element and a wall portion standing up on and from the base. A package is structured such that the upper end of the wall portion so formed as to surround the periphery of the storage portion is connected to a cover to thereby seal a light emitting element. A seal structure is composed of an uneven portion formed on the lower surface side surface of the base, a close contact layer formed on the surface of the uneven portion, a power supply layer formed on the close contact layer, and an electrode layer formed on the surface of the power supply layer. The uneven portion includes a first recessed portion formed at a position spaced in the radial direction from the outer periphery of a through electrode or from the inner wall of a through hole, and a second recessed portion formed at a position spaced further outwardly from the first recessed portion.

摘要翻译： 基板包括由用于安装发光元件的基座和竖立在基座上的壁部分限定的存储部分。 包装被构造成使得形成为围绕存储部分的周边的壁部分的上端连接到盖子上，从而密封发光元件。 密封结构由形成在基底的下表面侧的不平坦部分，形成在不平坦部分的表面上的紧密接触层，形成在紧密接触层上的电源层和形成在电极层上的电极层 电源层的表面。 不平坦部分包括形成在与通孔的外周沿径向间隔开的位置或从通孔的内壁隔开的位置处的第一凹部，以及形成在与第一凹部进一步向外间隔开的位置的第二凹部 凹陷部分。

公开(公告)号：US07981798B2

公开(公告)日：2011-07-19

申请号：US12233875

申请日：2008-09-19

申请人： Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

发明人： Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

IPC分类号： H01L21/44

CPC分类号： H01L33/486 ,  B81B2207/096 ,  B81C1/00301 ,  H01L24/97 ,  H01L33/62 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/12041 ,  H01L2924/15788 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599

摘要： The present disclosure relates to a method of manufacturing a substrate. The method includes: (a) forming through holes by applying an anisotropic etching to a silicon substrate from a first surface of the silicon substrate; (b) forming a first insulating film to cover the first surface of the silicon substrate, surfaces of the silicon substrate exposed from the through holes, and a second surface of the silicon substrate opposite to the first surface; (c) forming an opening in a portion of the first insulating film provided on the second surface, the portion of the first insulating film corresponding to an area in which the through holes are formed; (d) etching the silicon substrate using the first insulating film provided on the second surface as a mask, thereby forming a cavity in the silicon substrate; and (e) removing the first insulating film.

摘要翻译： 本公开涉及一种制造衬底的方法。 该方法包括：（a）通过从硅衬底的第一表面向硅衬底施加各向异性蚀刻形成通孔; （b）形成第一绝缘膜以覆盖硅衬底的第一表面，从通孔露出的硅衬底的表面和与第一表面相对的硅衬底的第二表面; （c）在设置在第二表面上的第一绝缘膜的一部分中形成开口，第一绝缘膜的与形成通孔的区域相对应的部分; （d）使用设置在第二表面上的第一绝缘膜作为掩模蚀刻硅衬底，从而在硅衬底中形成空腔; 和（e）去除第一绝缘膜。

公开(公告)号：US07882626B2

公开(公告)日：2011-02-08

申请号：US12393478

申请日：2009-02-26

申请人： Kei Murayama ,  Mitsutoshi Higashi ,  Masahiro Sunohara

发明人： Kei Murayama ,  Mitsutoshi Higashi ,  Masahiro Sunohara

IPC分类号： H05K3/30

CPC分类号： H05K3/3473 ,  H01L21/4857 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/351 ,  H05K1/113 ,  H05K3/005 ,  H05K3/007 ,  H05K3/4682 ,  H05K2201/0367 ,  H05K2201/068 ,  H05K2201/09527 ,  H05K2201/10674 ,  H05K2203/0108 ,  H05K2203/0113 ,  H05K2203/016 ,  H05K2203/0338 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method of manufacturing a wiring board having a semiconductor chip mounting surface for mounting a semiconductor chip thereon which is manufactured by a process including a step of forming a wiring layer and an insulating layer on a support board and a step of removing the support board, including a peeling layer forming step of forming a peeling layer on the support board formed by a material having a coefficient of thermal expansion which is equal to that of a semiconductor substrate constituting the semiconductor chip, and a support board removing step of removing the support board by carrying out a predetermined treatment over the peeling layer.

摘要翻译： 一种制造具有用于安装半导体芯片的半导体芯片安装表面的布线板的方法，其通过包括在支撑板上形成布线层和绝缘层的步骤的工艺制造，以及去除支撑板的步骤， 包括在由具有与构成半导体芯片的半导体衬底的热膨胀系数相同的热膨胀系数的材料形成的支撑板上形成剥离层的剥离层形成步骤，以及去除支撑板的支撑板移除步骤 通过对剥离层进行预定处理。

公开(公告)号：US07708613B2

公开(公告)日：2010-05-04

申请号：US11656580

申请日：2007-01-23

申请人： Yuichi Taguchi ,  Masahiro Sunohara ,  Hideaki Sakaguchi ,  Akinori Shiraishi ,  Naoyuki Koizumi ,  Kei Murayama ,  Mitsutoshi Higashi

发明人： Yuichi Taguchi ,  Masahiro Sunohara ,  Hideaki Sakaguchi ,  Akinori Shiraishi ,  Naoyuki Koizumi ,  Kei Murayama ,  Mitsutoshi Higashi

IPC分类号： H01J1/62

CPC分类号： H01L33/507 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2924/16195 ,  H01L2933/0041

摘要： A method of producing a light emitting apparatus including a light emitting element, a light emitting element housing having a recess for housing the light emitting element, and a translucent substrate placed on the light emitting element housing is disclosed. The disclosed method includes a fluorescent-substance-containing resin forming step of forming a fluorescent-substance-containing resin on a first side of the translucent substrate which first side is opposite to a second side of the translucent substrate which second side faces the recess. In the fluorescent-substance-containing resin forming step, luminance and chromaticity of light that is emitted from the light emitting element and then transmitted by the fluorescent-substance-containing resin are measured and a thickness of the fluorescent-substance-containing resin is adjusted based on the measured luminance and chromaticity so that light emitted from the light emitting apparatus attains the specified luminance and chromaticity.

摘要翻译： 公开了一种制造包括发光元件的发光装置的方法，具有用于容纳发光元件的凹部的发光元件壳体和放置在发光元件壳体上的透光性基板。 所公开的方法包括在透光性基板的第一面上形成含有荧光物质的树脂的荧光物质的树脂形成工序，第一面与透光性基板的第二面相对，第二面与凹部相对。 在含荧光物质的树脂形成步骤中，测量从发光元件发射并随后由含荧光物质的树脂透射的光的亮度和色度，并调节含荧光物质的树脂的厚度 基于测量的亮度和色度，使得从发光装置发射的光达到规定的亮度和色度。

公开(公告)号：US07705451B2

公开(公告)日：2010-04-27

申请号：US11882568

申请日：2007-08-02

申请人： Kei Murayama ,  Yuichi Taguchi ,  Naoyuki Koizumi ,  Masahiro Sunohara ,  Akinori Shiraishi ,  Mitsutoshi Higashi

发明人： Kei Murayama ,  Yuichi Taguchi ,  Naoyuki Koizumi ,  Masahiro Sunohara ,  Akinori Shiraishi ,  Mitsutoshi Higashi

IPC分类号： H01L23/06

CPC分类号： H01L23/055 ,  B81B2207/012 ,  B81C1/0023 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/00 ,  H01L2224/0401

摘要： A semiconductor device includes a laminated substrate formed by laminating a plurality of semiconductor substrates, a concave part formed in the laminated substrate, and a semiconductor element mounted in the concave part. A method of manufacturing a semiconductor device includes a first step of forming a laminated substrate by laminating a plurality of semiconductor substrates, a second step of forming a concave part by etching the laminated substrate, and a third step of mounting a semiconductor element in the concave part.

摘要翻译： 半导体器件包括通过层叠多个半导体衬底，形成在层叠衬底中的凹部和安装在凹部中的半导体元件而形成的层叠衬底。 一种制造半导体器件的方法包括：通过层叠多个半导体衬底形成层叠衬底的第一步骤，通过蚀刻层叠衬底形成凹部的第二步骤，以及将半导体元件安装在凹部中的第三步骤 部分。

公开(公告)号：US20090223046A1

公开(公告)日：2009-09-10

申请号：US12393478

申请日：2009-02-26

申请人： Kei Murayama ,  Mitsutoshi Higashi ,  Masahiro Sunohara

发明人： Kei Murayama ,  Mitsutoshi Higashi ,  Masahiro Sunohara

IPC分类号： H05K3/02

CPC分类号： H05K3/3473 ,  H01L21/4857 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/351 ,  H05K1/113 ,  H05K3/005 ,  H05K3/007 ,  H05K3/4682 ,  H05K2201/0367 ,  H05K2201/068 ,  H05K2201/09527 ,  H05K2201/10674 ,  H05K2203/0108 ,  H05K2203/0113 ,  H05K2203/016 ,  H05K2203/0338 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method of manufacturing a wiring board having a semiconductor chip mounting surface for mounting a semiconductor chip thereon which is manufactured by a process including a step of forming a wiring layer and an insulating layer on a support board and a step of removing the support board, including a peeling layer forming step of forming a peeling layer on the support board formed by a material having a coefficient of thermal expansion which is equal to that of a semiconductor substrate constituting the semiconductor chip, and a support board removing step of removing the support board by carrying out a predetermined treatment over the peeling layer.

摘要翻译： 一种制造具有用于安装半导体芯片的半导体芯片安装表面的布线板的方法，其通过包括在支撑板上形成布线层和绝缘层的步骤的工艺制造，以及去除支撑板的步骤， 包括在由具有与构成半导体芯片的半导体衬底的热膨胀系数相同的热膨胀系数的材料形成的支撑板上形成剥离层的剥离层形成步骤，以及去除支撑板的支撑板移除步骤 通过对剥离层进行预定处理。

公开(公告)号：US07563987B2

公开(公告)日：2009-07-21

申请号：US11898554

申请日：2007-09-13

申请人： Masahiro Sunohara ,  Kei Murayama ,  Hiroyuki Kato ,  Syoji Watanabe

发明人： Masahiro Sunohara ,  Kei Murayama ,  Hiroyuki Kato ,  Syoji Watanabe

IPC分类号： H05K1/16

CPC分类号： H01L25/0657 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/92244 ,  H01L2225/06524 ,  H01L2225/06586 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K1/185 ,  Y10T29/49128 ,  H01L2924/00

摘要： An electronic parts packaging structure of the present invention includes a core substrate having such a structure that a recess portion is provided by forming a prepreg insulating layer having an opening portion therein on a resin layer, and an electronic parts mounted on a bottom portion of the recess portion of the core substrate such that a connection pad of the electronic parts is directed upward, and also, such a structure may be employed that the electronic parts is embedded in a resin layer of a core substrate having a structure that the resin layer is formed on the prepreg insulating layer.

摘要翻译： 本发明的电子零件包装结构包括具有这样的结构的芯基板，该芯基板通过在树脂层上形成具有开口部分的预浸料绝缘层而形成凹部，以及安装在该底板上的电子部件 芯基板的凹部，使得电子部件的连接垫朝向上方，并且也可以采用这样的结构，即将电子部件嵌入到具有树脂层的结构的芯基板的树脂层中 形成在预浸料绝缘层上。

公开(公告)号：US07494898B2

公开(公告)日：2009-02-24

申请号：US11641336

申请日：2006-12-19

申请人： Masahiro Sunohara ,  Yuichi Taguchi ,  Akinori Shiraishi ,  Naoyuki Koizumi ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

发明人： Masahiro Sunohara ,  Yuichi Taguchi ,  Akinori Shiraishi ,  Naoyuki Koizumi ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

IPC分类号： H01L21/00

CPC分类号： H01L33/483 ,  B81B7/0067 ,  H01L2224/16225

摘要： A disclosed method for manufacturing a semiconductor device having a structure where a semiconductor element is mounted on a first substrate includes the steps of: bonding the first substrate on which the semiconductor element is mounted and a second substrate made of a material different from a material of the first substrate so as to encapsulate the semiconductor element; forming a first groove in the first substrate and a second groove in the second substrate; and cleaving a portion between the first groove and the second groove so as to individualize the semiconductor device.

摘要翻译： 公开的制造半导体器件的半导体器件的方法，其中半导体元件安装在第一衬底上，包括以下步骤：将其上安装有半导体元件的第一衬底和由不同于 第一衬底以封装半导体元件; 在所述第一基板中形成第一凹槽，在所述第二基板中形成第二凹槽; 并且在第一凹槽和第二凹槽之间切割一部分，以使半导体器件单独化。

公开(公告)号：US20080150109A1

公开(公告)日：2008-06-26

申请号：US11962232

申请日：2007-12-21

申请人： Masahiro Sunohara ,  Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Naoyuki Koizumi ,  Mitsutoshi Higashi

发明人： Masahiro Sunohara ,  Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Naoyuki Koizumi ,  Mitsutoshi Higashi

IPC分类号： H01L23/46

CPC分类号： H01L23/427 ,  H01L23/473 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： An electronic component has a substrate made of silicon in which a flow path for circulating a refrigerant is formed, a conductive pattern formed on a first principal surface of the substrate, a via plug penetrating the substrate and also connected to the conductive pattern, and an elastically deformable external connection terminal installed on a second principal surface of the substrate.

摘要翻译： 电子部件具有由硅构成的基板，其中形成有用于使制冷剂循环的流路，形成在基板的第一主表面上的导电图案，穿透基板的通孔塞，并且还连接到导电图案， 可弹性变形的外部连接端子安装在基板的第二主表面上。

公开(公告)号：US20070290329A1

公开(公告)日：2007-12-20

申请号：US11812149

申请日：2007-06-15

申请人： Kei Murayama ,  Mitsutoshi Higashi ,  Naoyuki Koizumi ,  Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara

发明人： Kei Murayama ,  Mitsutoshi Higashi ,  Naoyuki Koizumi ,  Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara

IPC分类号： H01L23/12

CPC分类号： H01L25/167 ,  H01L23/147 ,  H01L23/4926 ,  H01L23/62 ,  H01L24/48 ,  H01L25/16 ,  H01L2224/32145 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a semiconductor device 100, a light emitting element 120 has been mounted on an upper plane of a semiconductor substrate 102. In an impurity diffusion region of the semiconductor substrate 102, a P conducting type of a layer 104, and an N layer 106 have been formed, while an N conducting type impurity is implanted to the P layer 104, and then the implanted impurity is diffused to constitute the N layer 106. A zener diode 108 made of a semiconductor device has been formed by the P layer 104 and the N layer 106.

摘要翻译： 在半导体器件100中，发光元件120已经被安装在半导体衬底102的上平面上。在半导体衬底102的杂质扩散区域中，P导电类型的层104和N层106具有 形成N导电型杂质，然后将N导电型杂质注入到P层104中，然后将注入的杂质扩散以构成N层106.由P层104形成由半导体器件制成的齐纳二极管108， N层106。