公开(公告)号：US06821874B2

公开(公告)日：2004-11-23

申请号：US09757583

申请日：2001-01-11

申请人： Masahiko Matsudo ,  Kenji Suzuki ,  Kazuya Okubo

发明人： Masahiko Matsudo ,  Kenji Suzuki ,  Kazuya Okubo

IPC分类号： H01L213205

CPC分类号： H01L29/4941 ,  H01L21/28061 ,  H01L21/32053 ,  H01L29/4933 ,  Y10S257/90

摘要： An electrode and/or wiring having a polycide structure is formed with voids V therein at the preparing stage as shown in FIG. 3. If the scale down and lowering of resistance of the electrode and/or wiring further proceed in future, the influence of the voids becomes obvious to lower yields. According to the present invention, a method for depositing a tungsten silicide film is characterized in that when a tungsten silicide layer is formed on a polysilicon layer, a phosphorus atom containing gas is added to a reactive gas at least in the initial stage that the tungsten silicide layer is formed, and the amount of the added phosphorus atom containing gas is set to be in the range of from 0.2 vol. % to 0.45 vol. %.

摘要翻译： 具有多晶硅结构的电极和/或布线在制备阶段形成有空隙V，如图3所示。 3.如果将来进一步进行电极和/或布线的电阻降低和电阻降低，则空隙的影响变得明显，以降低产量。根据本发明，一种用于沉积硅化钨膜的方法的特征在于 在多晶硅层上形成硅化钨层时，至少在形成硅化钨层的初始阶段向反应气体中添加含磷原子的气体，并且添加的含磷原子的气体的量被设定 在0.2体积的范围内。 ％至0.45体积 ％。

公开(公告)号：US06448178B1

公开(公告)日：2002-09-10

申请号：US09701024

申请日：2000-11-22

申请人： Kenji Suzuki ,  Masahiko Matsudo

发明人： Kenji Suzuki ,  Masahiko Matsudo

IPC分类号： C23C1622

CPC分类号： H01L21/28052

摘要： A heat treatment method for heat treating a thin film is a method for heat treating the thin film having a metallic silicide layer, comprising a heating step, a temperature keeping step and a cooling step. Among these steps, the thin film is heated in an atmosphere of gas which is oxidizing gas or includes oxidizing gas at least in the heating step. An oxide film is formed on the thin film in the heating step to prevent the phosphorous atoms from escaping.

摘要翻译： 用于热处理薄膜的热处理方法是一种用于对具有金属硅化物层的薄膜进行热处理的方法，包括加热步骤，保温步骤和冷却步骤。 在这些步骤中，薄膜在至少在加热步骤中在氧化气体的气体气氛中加热或包括氧化气体。 在加热步骤中在薄膜上形成氧化膜以防止磷原子逸出。

公开(公告)号：US06913996B2

公开(公告)日：2005-07-05

申请号：US10181273

申请日：2001-11-13

申请人： Hideaki Yamasaki ,  Mitsuhiro Tachibana ,  Kazuya Okubo ,  Kenji Suzuki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Mitsuhiro Tachibana ,  Kazuya Okubo ,  Kenji Suzuki ,  Yumiko Kawano

IPC分类号： C23C16/30 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76876 ,  H01L21/76877

摘要： A metal film forming method, includes the steps of (a) (s13, s15) supplying a plural kinds of ingredient gases to a base barrier film (3) in sequence, wherein at least one of the gases includes a metal, and (b) (s14, s16) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film (5) of the metal is formed on the base barrier film (3).

摘要翻译： 金属膜形成方法包括以下步骤：（a）（s 13，s 15），其顺序地将多种成分气体供应到基底阻挡膜（3），其中至少一种气体包括金属，以及 （b）（s 14，s 16）对步骤（a）的成分气体进行真空排气，或者在步骤（a）的成分气体为原料气体之后，用另一种气体代替步骤（a）的成分气体 从而在基底阻挡膜（3）上形成极薄的金属薄膜（5）。

公开(公告)号：US20050032364A1

公开(公告)日：2005-02-10

申请号：US10486794

申请日：2002-08-07

申请人： Kazuya Okubo ,  Mitsuhiro Tachinaba ,  Cheng Fang ,  Kenji Suzuki ,  Kohichi Sato ,  Hotaka Ishizuka

发明人： Kazuya Okubo ,  Mitsuhiro Tachinaba ,  Cheng Fang ,  Kenji Suzuki ,  Kohichi Sato ,  Hotaka Ishizuka

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/45523 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/4408 ,  H01L21/28556 ,  H01L21/76877

摘要： A method of forming a tungsten film, capable of restricting voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and providing good burying characteristics. When forming a tungsten film on the surface of an object of treating (W) in a vacuumizing-enabled treating vessel (22), a reduction gas supplying process 70 and a tungsten gas supplying process 72 for supplying a tungsten-containing gas are alternately repeated with a purge process 74, for supplying an inert gas while vacuumizing, intervened therebetween to thereby form an initial tungsten film 76. Therefore, an initial tungsten film can be formed as a nucleation layer high in film thickness uniformity; and, accordingly, when main tungsten films are subsequently deposited, it is possible to restrict voids and volcanoes as large as adversely affecting characteristics despite the small diameter of a buried hole, and provide good burying characteristics.

摘要翻译： 形成钨膜的方法，其能够限制空洞和火山，尽管埋孔的直径小，但具有很大的不利影响特性，并且具有良好的埋藏特性。 在真空化处理容器（22）的处理对象（W）的表面上形成钨膜时，交替重复用于供给含钨气体的还原气体供给工序70和钨气供给工序72 吹扫工艺74，用于在抽真空时供应惰性气体，从而形成初始钨膜76.因此，可以形成初始钨膜作为膜厚均匀性高的成核层; 因此，随后沉积主钨膜时，尽管埋孔的直径很小，但可以限制大小不利地影响特性的空隙和火山，并提供良好的埋藏特性。

公开(公告)号：US20090085130A1

公开(公告)日：2009-04-02

申请号：US10585828

申请日：2005-01-28

申请人： Kenji Suzuki ,  Gishi Chung ,  Kazuya Okubo

发明人： Kenji Suzuki ,  Gishi Chung ,  Kazuya Okubo

IPC分类号： H01L29/78

CPC分类号： C23C16/30 ,  C23C16/42 ,  H01L21/28088 ,  H01L29/4966

摘要： The present invention relates to a semiconductor device comprising a semiconductor substrate (1), a gate insulator formed on this substrate, such as a gate oxide film (2), and a gate electrode (3) formed on the insulator. The gate electrode (3) has a metallic compound film (3a). This metallic compound film (3a) is formed by CVD using a material containing a metal carbonyl, e.g., W(CO)6 gas, and at least one of a Si-containing gas and a N-containing gas. The work function of the metallic compound film (3a) thus formed is controllable by the Si and/or N content of the film.

摘要翻译： 本发明涉及一种半导体器件，包括半导体衬底（1），形成在该衬底上的栅极绝缘体（例如栅极氧化膜）和形成在绝缘体上的栅电极。 栅电极（3）具有金属化合物膜（3a）。 该金属化合物膜（3a）通过CVD使用含有羰基金属如W（CO）6气体的材料和含Si气体和含N气体中的至少一种来形成。 由此形成的金属化合物膜（3a）的功函数可以通过膜的Si和/或N含量来控制。

公开(公告)号：US09506416B2

公开(公告)日：2016-11-29

申请号：US14095567

申请日：2013-12-03

申请人： Kenji Suzuki ,  Hiroshi Miyamoto ,  Yasushi Iwazaki

发明人： Kenji Suzuki ,  Hiroshi Miyamoto ,  Yasushi Iwazaki

IPC分类号： F02D41/00 ,  F02D41/14

CPC分类号： F02D41/1495 ,  F02D41/0085 ,  F02D41/1456

摘要： A first parameter correlated with a degree of a variation in the output from the air-fuel ratio sensor is calculated. A possible range of a second parameter representing a degree of a variation in air-fuel ratio among the cylinders is determined based on the first parameter. The first parameter is calculated with an air-fuel ratio of a predetermined cylinder forcibly changed. A difference between the unchanged first parameter and the forcibly changed first parameter is determined. A first characteristic representing a relation between the second parameter and the difference is determined based on the possible range of the second parameter and the difference. One of the determination value and the first parameter calculated before the forced change is corrected based on inclination of the determined first characteristic.

摘要翻译： 计算与空燃比传感器的输出的变化程度相关的第一参数。 基于第一参数来确定表示气缸中的空燃比的变化程度的第二参数的可能范围。 第一参数是以预定的气缸的空燃比强制变化的方式计算的。 确定未改变的第一参数和强制改变的第一参数之间的差异。 基于第二参数的可能范围和差异来确定代表第二参数和差异之间的关系的第一特征。 基于确定的第一特性的倾斜度来校正在强制改变之前计算的确定值和第一参数中的一个。

公开(公告)号：US09485328B2

公开(公告)日：2016-11-01

申请号：US13409499

申请日：2012-03-01

申请人： Yosuke Abe ,  Minoru Yoneyama ,  Kenji Suzuki ,  Yuji Minohoshi ,  Masaki Morimoto ,  Kiwamu Takahashi ,  Mitsuru Kida ,  Kosuke Shimizu

发明人： Yosuke Abe ,  Minoru Yoneyama ,  Kenji Suzuki ,  Yuji Minohoshi ,  Masaki Morimoto ,  Kiwamu Takahashi ,  Mitsuru Kida ,  Kosuke Shimizu

IPC分类号： A63F13/58 ,  H04L29/06 ,  A63F13/812

CPC分类号： H04L67/38 ,  A63F13/58 ,  A63F13/812 ,  A63F2300/5573 ,  A63F2300/6018

摘要： The game control device may include a storage unit, a first match-up executing unit, a character ability updating unit, and a second match-up executing unit. The storage unit stores an ability value of each player character. The first match-up executing unit executes a first match-up between two player characters in response to input of a communication terminal, and to determine a result of the first match-up based on the stored ability value of each player character. The character ability updating unit updates, based on the result of the first match-up, the ability values of the two player characters, and causes the storage unit to store the updated ability values. The second match-up executing unit executes a second match-up between player characters independently from the first match-up without input of the communication terminal, and determines a result of the second match-up based on the stored ability value of each player character.

摘要翻译： 游戏控制装置可以包括存储单元，第一匹配执行单元，字符能力更新单元和第二匹配执行单元。 存储单元存储每个玩家角色的能力值。 第一匹配执行单元响应于通信终端的输入执行两个播放器字符之间的第一匹配，并且基于每个游戏者角色的存储能力值来确定第一匹配的结果。 角色能力更新单元基于第一匹配的结果更新两个玩家角色的能力值，并使存储单元存储更新的能力值。 第二匹配执行单元在没有输入通信终端的情况下独立于第一匹配执行玩家角色之间的第二匹配，并且基于每个玩家角色的存储能力值来确定第二匹配的结果 。

公开(公告)号：US09460871B2

公开(公告)日：2016-10-04

申请号：US14006535

申请日：2012-04-03

申请人： Yasuhiro Naka ,  Kouetsu Takaya ,  Kenji Suzuki

发明人： Yasuhiro Naka ,  Kouetsu Takaya ,  Kenji Suzuki

IPC分类号： H01H11/00 ,  H01H11/02 ,  H01H11/04 ,  H01H65/00 ,  H01H9/44 ,  H01H50/14 ,  H01H50/16 ,  H01H50/38 ,  H01H51/06 ,  H01H49/00 ,  H01H1/66 ,  H01H50/04 ,  H01H50/02

CPC分类号： H01H11/00 ,  H01H1/66 ,  H01H9/443 ,  H01H49/00 ,  H01H50/045 ,  H01H50/14 ,  H01H50/163 ,  H01H50/38 ,  H01H51/065 ,  H01H2050/025 ,  Y10T29/49105

摘要： A method for assembling an arc-extinguishing chamber of an electromagnetic contactor includes a step of fixing a pair of fixed contacts each including a support conductor and a C-shaped part, to a bottom plate part of the arc-extinguishing chamber having a tub-shape with one end being open, the C-shaped part defining inside of the arc-extinguishing chamber; a step of installing an insulation cover covering a part other than a contact point part of each C-shaped part of the pair of fixed contacts; and a step of disposing a movable contact to be capable of contacting to and separating from the contact point parts of the fixed contacts.

摘要翻译： 一种组装电磁接触器的灭弧室的方法包括将一对包括支撑导体和C形部分的固定触头固定到灭弧室的底板部分上的步骤， 形状，其一端是开放的，C形部分限定在灭弧室内部; 安装覆盖除了一对固定触点的每个C形部分的接触点部分之外的部分的绝缘盖的步骤; 以及设置能够接触固定触点的接点部分并与其分离的可动触头的步骤。

公开(公告)号：US09368140B2

公开(公告)日：2016-06-14

申请号：US11046323

申请日：2005-01-27

申请人： Shingo Tsuda ,  Kenji Suzuki

发明人： Shingo Tsuda ,  Kenji Suzuki

IPC分类号： G11B5/55 ,  G11B5/48 ,  G11B5/54

CPC分类号： G11B5/5526 ,  G11B5/4806 ,  G11B5/54

摘要： Embodiments of the invention provide an actuator head suspension assembly having an efficient voice coil. In one embodiment, a voice coil is formed in a circular or any other shape than the conventional sectorial shape to increase the efficiency of the voice coil and diminish oscillation and noise of an actuator head suspension assembly. The voice coil shape is selected such that the proportion of an out-of-plane force becomes smaller than that in the conventional sectorial voice coil and the proportion contributing as weight to the oscillation energy also becomes smaller.

摘要翻译： 本发明的实施例提供一种具有有效音圈的致动器头悬挂组件。 在一个实施例中，音圈形成为圆形或任何其他形状，而不是传统的扇形，以提高音圈的效率，并减少致动器头悬挂组件的振荡和噪音。 选择音圈形状使得平面外力的比例变得比常规扇形音圈中的比例小，并且作为对振荡能量的重量的比例也变小。

公开(公告)号：US09328685B2

公开(公告)日：2016-05-03

申请号：US14212400

申请日：2014-03-14

申请人： Kenji Suzuki ,  Hiroshi Miyamoto ,  Yasushi Iwazaki ,  Senji Kato

发明人： Kenji Suzuki ,  Hiroshi Miyamoto ,  Yasushi Iwazaki ,  Senji Kato

IPC分类号： F02D41/00 ,  F02D41/14 ,  F02D41/24

CPC分类号： F02D41/1495 ,  F02D41/0085 ,  F02D41/1441 ,  F02D41/1456 ,  F02D41/2438

摘要： A first parameter correlated with a degree of fluctuation of output from an air-fuel ratio sensor is calculated, and whether or not the calculated first parameter has a value between a predetermined primary determination upper-limit value α1H and a primary determination lower-limit value is determined. Such forced active control as reduces an air-fuel ratio shift in one of the cylinders which is subjected to a most significant air-fuel ratio shift is performed when the calculated first parameter is determined to have a value between the predetermined primary determination upper-limit value and the primary determination lower-limit value. A first parameter is calculated while the forced active control is in execution. The calculated first parameter is compared with a predetermined secondary determination value to determine whether or not variation abnormality is present.

摘要翻译： 计算与空燃比传感器的输出的波动程度相关的第一参数，并且计算出的第一参数是否具有预定的一次判定上限值α1H和一次判定下限值之间的值 决心，决意，决定。 当所计算出的第一参数被确定为具有预定的主要确定上限之间的值时，执行这种强制主动控制，以减少经受最大空燃比移动的一个气缸中的空燃比偏移 值和主要判定下限值。 在强制主动控制正在执行时计算第一个参数。 将计算出的第一参数与预定的次级判定值进行比较，以确定是否存在变化异常。