公开(公告)号：US20100227459A1

公开(公告)日：2010-09-09

申请号：US11997798

申请日：2006-08-09

申请人： Hideaki Yamasaki

发明人： Hideaki Yamasaki

IPC分类号： H01L21/28 ,  H01L21/44

CPC分类号： C23C16/16 ,  C23C16/34 ,  C23C16/42 ,  C23C16/45525 ,  H01L21/28097 ,  H01L29/4975

摘要： Disclosed is a method for forming a W-based film including a step for placing a substrate in a processing chamber, a step for forming a WSi film by alternately repeating disposition of W through introduction of a W(CO)6 gas into the processing chamber and silicidation of W or deposition of Si through introduction of an Si-containing gas into the processing chamber, and a step for purging the processing chamber between the supply of the W(CO)6 gas and the supply of the Si-containing gas.

摘要翻译： 公开了一种用于形成W基膜的方法，其包括将基板放置在处理室中的步骤，通过将W（CO）6气体引入到处理室中交替重复布置W形成WSi膜的步骤 通过将含Si气体引入处理室中，W的硅化或Si的沉积，以及在供给W（CO）6气体和供给含Si气体之间进行处理室的吹扫的工序。

公开(公告)号：US20090197410A1

公开(公告)日：2009-08-06

申请号：US12306096

申请日：2007-06-21

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L21/443

CPC分类号： C23C16/34 ,  C23C16/52 ,  H01L21/28097 ,  H01L21/28556 ,  H01L29/4975 ,  H01L29/517

摘要： A substrate is disposed in a processing chamber. An organic Ta compound gas having Ta═N bond, a Si-containing gas and a N-containing gas are introduced into the processing chamber to form a TaSiN film on the substrate by CVD. In this film formation, at least one of a partial pressure of the Si-containing gas in the processing chamber, a total pressure in the processing chamber, a film forming temperature and a partial pressure of the N-containing gas in the processing chamber is controlled to thereby regulate Si concentration in the film. Particularly, when SiH4 gas is used as the Si-containing gas, the SiH4 gas partial pressure is determined based on the fact that the serried Si concentration in the film under giving process conditions can be expressed as a linear function involving the logarithm of the partial pressure of the SiH4 gas.

摘要翻译： 衬底设置在处理室中。 将具有Ta-N键的有机Ta化合物气体，含Si气体和含N气体引入到处理室中，通过CVD在衬底上形成TaSiN膜。 在该膜形成中，处理室中的含Si气体的分压，处理室中的总压，成膜温度和处理室中的含N气体的分压中的至少一个为 从而调节膜中的Si浓度。 特别地，当使用SiH 4气体作为含Si气体时，SiH 4气体分压基于以下事实来确定：在给定工艺条件下膜中的塞状Si浓度可以表示为包括部分的对数的线性函数 SiH4气体的压力。

公开(公告)号：US07482283B2

公开(公告)日：2009-01-27

申请号：US10450161

申请日：2001-12-11

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L21/44 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45565 ,  C23C16/0218 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/52 ,  H01J37/32935 ,  H01L21/28556 ,  H01L21/28568

摘要： The present invention relates to a method and apparatus for forming a thin film using the ALD process. Prior to the ALD process where each of a plurality of source gasses is supplied one by one, plural times, a pretreatment process is performed in which the source gasses are simultaneously supplied to shorten an incubation period and improve throughput.

摘要翻译： 本发明涉及使用ALD工艺形成薄膜的方法和装置。 在ALD过程之前，一个接一个地提供多个源气体中的每一个，多次进行预处理过程，其中同时供给源气体以缩短潜伏期并提高生产量。

公开(公告)号：US20080311297A1

公开(公告)日：2008-12-18

申请号：US12193370

申请日：2008-08-18

申请人： Tatsuo Hatano ,  Hideaki Yamasaki

发明人： Tatsuo Hatano ,  Hideaki Yamasaki

IPC分类号： C23C16/16

CPC分类号： C23C16/16 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45553

摘要： A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.

摘要翻译： 通过使用金属羰基气体在基板上形成金属膜的CVD方法包括将真空室设置在真空压力下并将真空室内的基板加热到金属羰基气体分解的第一温度的准备工序。 还包括供给步骤，用于将金属羰基气体供给到真空室中，同时以第一真空泵送速度排出真空室，以及通过停止供应羰基金属气体来除去金属羰基气体的分解气体的去除步骤;以及 以足够高于第一真空泵送速度的第二真空泵送速度快速排出真空室。 可以根据需要反复进行供给步骤和去除步骤。

公开(公告)号：US20060068097A1

公开(公告)日：2006-03-30

申请号：US10711717

申请日：2004-09-30

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Paul Jamison

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Paul Jamison

IPC分类号： C23C16/00

CPC分类号： H01L21/28556 ,  C23C16/16 ,  H01L21/28079 ,  H01L21/28247 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76856 ,  H01L29/517

摘要： A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.

摘要翻译： 用于形成钝化金属层的方法，其在随后暴露于含氧环境期间保持下面的金属层的性质和形态。 该方法包括在处理室中提供衬底，将衬底暴露于含有铼 - 羰基前体的工艺气体，以在化学气相沉积工艺中在衬底上沉积铼金属层，以及在铼金属层上形成钝化层 从而抑制铼金属表面上含铼结核的氧诱导生长。

公开(公告)号：US06924223B2

公开(公告)日：2005-08-02

申请号：US10673646

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Mitsuhiro Tachibana ,  Koumei Matsuzava ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra ,  Andrew H Simon ,  John J Yurkas

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Mitsuhiro Tachibana ,  Koumei Matsuzava ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra ,  Andrew H Simon ,  John J Yurkas

IPC分类号： C23C16/04 ,  C23C16/16 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/16 ,  C23C16/4408 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

摘要翻译： 提供了一种使用间歇式前体气体流动方法在基板上形成金属层的方法。 该方法包括将衬底暴露于还原气体，同时将衬底暴露于羰基金属前体气体的脉冲。 进行该过程，直到在基底上形成具有所需厚度的金属层。 金属层可以形成在基板上，或者可以在金属成核层上形成金属层。

公开(公告)号：US20050079708A1

公开(公告)日：2005-04-14

申请号：US10673648

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： C23C16/16 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76841

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.

摘要翻译： 一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。 在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12， Re 2（CO）10，Cr（CO）6和Ru 3（CO）12）。 在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的基底温度和约200mTorr的室压下从包含W（CO）6前体的工艺气体中沉积W层。

公开(公告)号：US20050069632A1

公开(公告)日：2005-03-31

申请号：US10673646

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Mitsuhiro Tachibana ,  Koumei Matsuzava ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra ,  Andrew Simon ,  John Yurkas

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Mitsuhiro Tachibana ,  Koumei Matsuzava ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra ,  Andrew Simon ,  John Yurkas

IPC分类号： C23C16/04 ,  C23C16/16 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  B05D5/12 ,  H01L21/4763

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/16 ,  C23C16/4408 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

公开(公告)号：US08389053B2

公开(公告)日：2013-03-05

申请号：US12593945

申请日：2008-03-26

申请人： Tsuyoshi Moriya ,  Toshio Hasegawa ,  Hideaki Yamasaki

发明人： Tsuyoshi Moriya ,  Toshio Hasegawa ,  Hideaki Yamasaki

IPC分类号： B05D1/12 ,  C23C16/00

CPC分类号： C23C16/4402

摘要： A method of cleaning a powdery source supply system prevents outflow of particles from a chamber or an introduction line in a film forming process. A substrate processing system includes a powdery source supply system and a film forming processing unit. The powdery source supply system includes an ampoule for accommodating a powdery source, a carrier gas supply unit for supplying a carrier gas into the ampoule, an introduction line for connecting the ampoule and the film forming processing unit, a purge line branched from the introduction line, and a valve for opening or closing the introduction line. When the valve is opened and the interior of the purge line is evacuated prior to the film forming process, the carrier gas supply unit supplies a carrier gas so that the viscous force acting on particles by the carrier gas is greater than the viscous force in the film forming process.

摘要翻译： 清洁粉末源供应系统的方法可以防止颗粒从成膜过程中的室或引入管流出。 基板处理系统包括粉末源供应系统和成膜处理单元。 粉末源供给系统包括用于容纳粉末源的安瓿，用于将载气供应到安瓿中的载气供给单元，用于连接安瓿和成膜处理单元的引入管线，从导入管分支的净化管线 ，以及用于打开或关闭引入管线的阀。 当打开阀门并且在成膜过程之前将净化管线的内部抽真空时，载气供给单元提供载气，使得由载气作用在颗粒上的粘性力大于载体气体中的粘性力 成膜工艺。

公开(公告)号：US20090291549A1

公开(公告)日：2009-11-26

申请号：US12097418

申请日：2006-11-24

申请人： Hideaki Yamasaki ,  Koji Akiyama ,  Kazuyoshi Yamazaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Koji Akiyama ,  Kazuyoshi Yamazaki ,  Yumiko Kawano

IPC分类号： H01L21/26 ,  H01L21/28

CPC分类号： C23C16/16 ,  C23C8/16 ,  C23C8/36 ,  C23C16/56 ,  H01L21/28079 ,  H01L21/28176 ,  H01L29/495 ,  H01L29/517

摘要： On a Si substrate 1, i.e., a semiconductor substrate, a gate insulating film 2 is formed, and then a W-based film 3a is formed on the gate insulating film 2 by CVD using a film forming gas including W(CO)6 gas. Then, the film is oxidized under existence of a reducing gas, and the W in the W-based film 3a is not oxidized but only C is selectively oxidized to reduce the concentration of C contained in the W-based film 3a. Then, after performing heat treatment as needed, resist coating, patterning, etching and the like are performed, and, an impurity diffused region 10 is formed by ion implantation and the like, and a semiconductor device having a MOS structure is formed.

摘要翻译： 在Si衬底1即半导体衬底上形成栅极绝缘膜2，然后通过CVD使用包含W（CO）6气体的成膜气体在栅极绝缘膜2上形成W基膜3a 。 然后，在存在还原气体的情况下，膜被氧化，W基膜3a中的W不被氧化，只有选择性地氧化C以降低W基膜3a中所含的C浓度。 然后，根据需要进行热处理后，进行抗蚀剂涂布，图案化，蚀刻等，通过离子注入等形成杂质扩散区域10，形成具有MOS结构的半导体器件。