公开(公告)号：US06312761B1

公开(公告)日：2001-11-06

申请号：US09489338

申请日：2000-01-21

申请人： Masamichi Harada

发明人： Masamichi Harada

IPC分类号： C23C1622

CPC分类号： C23C16/45565 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45514 ,  C23C16/4558

摘要： A tungsten nitride film, having a high growth speed without causing any dusting, is formed. The film forming apparatus 2, according to the present invention, includes an adhesion preventive container 8 which is placed in a reactor 11; and an object on which a film is to be formed 20 is located in the adhesion preventive container 8. In a first gas inlet equipment, a first feedstock gas is jetted from a shower nozzle 12. In a second gas inlet equipment, a second feedstock gas is jetted around the object on which a film is to be formed 20 between the shower nozzle 12 and the material 20. The first feedstock gas and the second feedstock gas attain the surface of the object on which a film is to be formed without being mixed together, which enables the efficient performance of the reaction. Since the adhesion preventive container is heated to 150 to 250° C., neither WF6.4NH3 nor WxN is formed and thus, no dusting is caused.

摘要翻译： 形成具有高生长速度而不引起任何粉尘的氮化钨膜。 根据本发明的成膜装置2包括放置在反应器11中的防粘剂容器8; 并且其上将形成膜的物体20位于防粘性容器8中。在第一气体入口设备中，从淋浴喷嘴12喷射第一原料气体。在第二气体入口设备中，第二原料 在淋浴喷嘴12和材料20之间将气体喷射到要在其上形成膜20的物体周围。第一原料气体和第二原料气体到达要形成膜的物体的表面，而不是 混合在一起，这使得能够有效地进行反应。 由于防粘附容器被加热至150-250℃，因此不会形成WF6.4NH3和WxN，因此不会引起除尘。

公开(公告)号：US06815007B1

公开(公告)日：2004-11-09

申请号：US10086258

申请日：2002-03-04

申请人： Ming-Hwa Yoo ,  Shih-Chi Lin ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

发明人： Ming-Hwa Yoo ,  Shih-Chi Lin ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

IPC分类号： C23C1622

CPC分类号： H01J37/32862 ,  C23C16/308 ,  C23C16/401 ,  C23C16/4404 ,  H01J2237/022

摘要： A method for reducing contaminants in a processing chamber having an inner wall by seasoning the walls. The method comprising the following steps. A first USG film is formed over the processing chamber inner wall. An FSG film is formed over the first USG film. A second USG film is formed over the FSG film. A nitrogen-containing film is formed over the second USG film wherein the first USG film, the FSG film, the second USG film and the nitrogen-containing film comprise a UFUN season film.

公开(公告)号：US06426115B1

公开(公告)日：2002-07-30

申请号：US09570965

申请日：2000-05-15

申请人： Chen-Wen Fan ,  Richard G. W. Gingerich ,  Dale E. Benjamin

发明人： Chen-Wen Fan ,  Richard G. W. Gingerich ,  Dale E. Benjamin

IPC分类号： C23C1622

CPC分类号： C09K11/025 ,  C09K11/584 ,  Y10T428/2991 ,  Y10T428/2993

摘要： A method of coating phosphor particles by chemical vapor deposition. The phosphors are coated by introducing an inert gas into a reaction vessel; charging phosphor particles into the reaction vessel; heating the reaction vessel to a reaction temperature; introducing a coating precursor which includes carbon into the reaction vessel for a time sufficient to saturate the phosphor particles with the precursor; continuing precursor flow into the reaction vessel; introducing an oxygen/ozone mixture into the reaction vessel, the oxygen/ozone mixture comprising less than 4.4 wt. % ozone; and maintaining the inert gas flow, oxygen/ozone mixture flow and further precursor supply for a time sufficient to coat the phosphor particles. The process produces phosphors having from 2200 to 6300 ppm of carbon on the coating and provides lamp efficacy's of greater than 6.1 lm/watt.

摘要翻译： 通过化学气相沉积法涂覆荧光体颗粒的方法。 通过将惰性气体引入反应容器来涂覆荧光体; 将磷光体颗粒装入反应容器中; 将反应容器加热至反应温度; 将包含碳的涂料前体引入反应容器中足以使荧光体颗粒与前体饱和的时间; 持续的前体流入反应容器; 将氧/臭氧混合物引入反应容器中，氧/臭氧混合物包含小于4.4wt。 ％臭氧; 并且保持惰性气体流动，氧/臭氧混合物流和进一步的前体供应足以涂覆荧光体颗粒的时间。 该方法产生在涂层上具有2200至6300ppm碳的荧光体，并提供大于6.1lm /瓦特的灯功效。

公开(公告)号：US06605319B1

公开(公告)日：2003-08-12

申请号：US10074277

申请日：2002-02-11

申请人： Jeffrey D. Chinn ,  Yi-Hsing Chen ,  Robert Z. Bachrach ,  John Christopher Moran

发明人： Jeffrey D. Chinn ,  Yi-Hsing Chen ,  Robert Z. Bachrach ,  John Christopher Moran

IPC分类号： C23C1622

CPC分类号： C23C16/52 ,  C23C16/56

摘要： The method of the invention involves depositing a plurality of thin layers of film, each layer having a thickness ranging from about 500Å to about 2000Å. Low Pressure Chemical Vapor Deposition or other techniques known in the art maybe used to deposit each thin layer of film. The film is polysilicon or silicon-germanium, where the germanium content ranges from about 4% by weight to about 20% by weight germanium. A Rapid Thermal Anneal (“RTA”) is performed on a deposited thin film layer to relieve residual film stress in at least that film layer. The use of RTA rather than furnace annealing permits much shorter annealing times. Optionally, but advantageously, hydrogen may be present during RTA to permit the use of lower processing temperatures, typically about 20% lower relative to a customary anneal. A series of film deposition/rapid thermal anneal cycles is used to produce the desired, nominal total thickness polysilicon film. This method is generally useful for producing polysilicon films in the range of from about 2 microns to about 20 microns.

摘要翻译： 本发明的方法包括沉积多层薄膜，各层的厚度范围为约500至约2000。 低压化学气相沉积或本领域已知的其它技术可以用于沉积每层薄膜。 该膜是多晶硅或硅 - 锗，其中锗含量为约4重量％至约20重量％的锗。 在沉积的薄膜层上进行快速热退火（“RTA”）以减轻至少该膜层中的残余膜应力。 使用RTA而不是炉退火允许更短的退火时间。 可选地，但是有利地，在RTA期间可能存在氢，以允许使用较低的加工温度，相对于常规退火，通常约为20％。 使用一系列膜沉积/快速热退火循环来产生所需的标称总厚度多晶硅膜。 该方法通常可用于生产在约2微米至约20微米范围内的多晶硅膜。

公开(公告)号：US06207219B1

公开(公告)日：2001-03-27

申请号：US09009161

申请日：1998-01-20

申请人： Takeshi Ikeya ,  Kenji Sato ,  Kazuhiro Toyoda ,  Takeshi Kamiya

发明人： Takeshi Ikeya ,  Kenji Sato ,  Kazuhiro Toyoda ,  Takeshi Kamiya

IPC分类号： C23C1622

CPC分类号： C23C14/185 ,  C25D7/126 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A method for manufacturing a thin-film solar cell substrate of group IB, IIIB and VIB elements of the Periodic Table, by using an apparatus for depositing selenium (Se) on the thin-film solar cell substrate. The apparatus has a base with gas inlet and outlet pipes. A bell jar is placed on top of the base with an O-ring interposed between them. A thin-film solar cell precursor and Se powder are placed in a recess formed in a lower heating jig, and the lower heating jig is positioned on the base. An upper heating jig is placed on top of the lower heating jig. The upper heating jig is vertically moved by a vertically actuating mechanism. The upper and lower heating jigs are heated under vacuum so as to diffuse Se to the thin-film solar cells, whereby a CuInSe2 alloy film is formed.

摘要翻译： 通过使用在薄膜太阳能电池基板上沉积硒（Se）的装置，制造元素周期表的IB，IIIB和VIB族元素的薄膜太阳能电池基板的方法。 该设备具有带气体入口和出口管的基座。 将钟罩放置在基座的顶部，其间插入有O形环。 将薄膜太阳能电池前体和Se粉末放置在形成在下加热夹具中的凹部中，并且下加热夹具位于基底上。 上加热夹具放置在下加热夹具的顶部。 上部加热夹具通过垂直致动机构垂直移动。 上，下加热夹具在真空下被加热以便将Se扩散到薄膜太阳能电池，由此形成CuInSe 2合金膜。

公开(公告)号：US06827977B2

公开(公告)日：2004-12-07

申请号：US10091589

申请日：2002-03-07

申请人： Vijayen S. Veerasamy

发明人： Vijayen S. Veerasamy

IPC分类号： C23C1622

CPC分类号： C03C17/3626 ,  B32B17/10009 ,  B32B17/10174 ,  B32B17/1055 ,  B32B17/10981 ,  B60J1/002 ,  C03C17/3435 ,  C03C17/3441 ,  C03C17/3482 ,  C03C17/36 ,  C03C17/3634 ,  C03C17/3636 ,  C03C17/366 ,  C03C2217/78 ,  C03C2218/365 ,  C23C16/26 ,  C23C16/56 ,  Y10S427/103 ,  Y10S427/105 ,  Y10T428/24628 ,  Y10T428/265 ,  Y10T428/30

摘要： A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.

摘要翻译： 提供制造涂覆制品（例如窗单元）和相应的涂覆制品的方法。 在玻璃基板上形成或包含类金刚石碳（DLC）层。 然后，在包含DLC的层上的基板上形成保护层。 在热处理（HT）期间，保护层防止含DLC层明显燃烧。 此后，可以根据需要使用所得到的涂覆玻璃基板，它已经是HT并且包括保护性的DLC包括层。

公开(公告)号：US06808747B1

公开(公告)日：2004-10-26

申请号：US09489356

申请日：2000-01-21

申请人： Hong Shih ,  Nianci Han

发明人： Hong Shih ,  Nianci Han

IPC分类号： C23C1622

CPC分类号： H01J37/32495 ,  C23C28/044 ,  Y10S156/914

摘要： A method of depositing boron carbide on an aluminum substrate, particularly useful for a plasma etch reactor having interior surfaces facing the plasma composed of boron carbide, preferably principally composed of B4C. Although in this application, the boron carbide may be a bulk sintered body, in the method of the invention it may be a layer of boron carbide coated on an aluminum chamber part. The boron carbide coating may be applied by thermal spraying, such as plasma spraying, by chemical vapor deposition, or by other layer forming technique such as a surface converting reaction. The boron carbide is highly resistant to high-density plasma etchants such as BCl3. The plasma sprayed coating is advantageously applied to only a portion of an anodized aluminum wall. The boron carbide may be sprayed over the exposed portion of an aluminum substrate over which the anodization has been removed. A band of the aluminum substrate at the transition between the anodization and the boron carbide is roughened prior to anodization so that the boron carbide sticks to the correspondingly roughened surface of the anodization. Alternatively, the entire wall area of the anodized aluminum to be coated is roughened, and the boron carbide is sprayed over the anodization.

摘要翻译： 一种在铝基板上沉积碳化硼的方法，特别适用于等离子体蚀刻反应器，其具有面向由碳化硼构成的等离子体的内表面，优选主要由B4C组成。 尽管在本申请中，碳化硼可以是块状烧结体，但是在本发明的方法中，可以是涂覆在铝室部分上的碳化硼层。 碳化硼涂层可以通过热喷涂，例如等离子喷涂，化学气相沉积，或其它层形成技术如表面转化反应来施加。 碳化硼对高密度等离子体蚀刻剂如BCl 3具有高度的抗性。 等离子喷涂涂层有利地仅施加于阳极氧化铝壁的一部分。 可以将碳化硼喷涂在已经去除阳极氧化的铝基板的暴露部分上。 在阳极氧化之前，在阳极氧化和碳化硼之间的过渡处的铝基材的带被粗糙化，使得碳化硼粘附到阳极氧化的相应的粗糙化表面。 或者，要涂覆的阳极氧化铝的整个壁面被粗糙化，并且碳化硼被喷涂在阳极氧化上。

公开(公告)号：US06211065B1

公开(公告)日：2001-04-03

申请号：US08948799

申请日：1997-10-10

申请人： Ming Xi ,  Eugene Tzou ,  Lie-Yea Cheng ,  Turgut Sahin ,  Yaxin Wang

发明人： Ming Xi ,  Eugene Tzou ,  Lie-Yea Cheng ,  Turgut Sahin ,  Yaxin Wang

IPC分类号： C23C1622

CPC分类号： B05D1/62 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/26

摘要： The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.

摘要翻译： 本发明提供了一种使用施加到其上沉积材料的衬底的高偏置功率沉积非晶碳氟化合物膜的方法。 本发明考虑了以速率和功率水平流动碳前体，使得碳源的相等摩尔比可用于结合薄膜中的碎裂氟，从而提高膜质量，同时还实现改进的间隙填充性能。 本发明进一步提供了通过首先在金属表面上沉积金属或TiN粘附层，然后用氮气填充沉积的粘合层的表面来改善非晶碳氟化合物膜对金属表面的粘合性。 通过用氮化硅或氮氧化硅涂覆室壁来进一步改善粘合性。

公开(公告)号：US06635310B1

公开(公告)日：2003-10-21

申请号：US09830334

申请日：2001-04-26

申请人： Hitoshi Kato ,  Yoshiyuki Fujita ,  Yukio Tojo ,  Toshitake Tsuda

发明人： Hitoshi Kato ,  Yoshiyuki Fujita ,  Yukio Tojo ,  Toshitake Tsuda

IPC分类号： C23C1622

CPC分类号： H01L28/84 ,  H01L21/223 ,  H01L21/32155 ,  H01L27/10852

摘要： A thermal processing method of the invention includes; a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having a minutely irregular profile; and a doping step of introducing phosphorus atoms in the silicon film as impurities, by using PH3 gas as a doping gas while maintaining a temperature of 550 to 750° C.

摘要翻译： 本发明的热处理方法包括： 加载步骤，将待处理对象装载到处理容器中，所述对象具有设置有具有微小不规则轮廓的硅膜的表面; 以及通过在保持550〜750℃的温度下使用PH 3气体作为掺杂气体的方法，在硅膜中引入磷原子作为杂质的掺杂工序。

公开(公告)号：US06616870B1

公开(公告)日：2003-09-09

申请号：US09633210

申请日：2000-08-07

申请人： Jitendra S. Goela ,  Zlatko Salihbegovic

发明人： Jitendra S. Goela ,  Zlatko Salihbegovic

IPC分类号： C23C1622

CPC分类号： C23C16/45559 ,  C23C16/01 ,  C23C16/458

摘要： An apparatus for the manufacture of chemical vapor deposited domes. The apparatus has a vapor deposition chamber with a plurality of sides, a base and a top where the base has a reactant port for receiving a flow of chemical reactants. A male mandrel is joined to one of a plurality of sides of the deposition chamber such that the flow of chemical reactants in the vapor deposition chamber does not impinge on the mandrel.

摘要翻译： 一种用于制造化学气相沉积圆顶的装置。 该装置具有多个侧面的气相沉积室，基底和顶部，其中基底具有用于接收化学反应物流的反应物口。 阳性心轴连接到沉积室的多个侧面中的一个，使得气相沉积室中的化学反应物的流动不会撞击在心轴上。