公开(公告)号：US20150204729A1

公开(公告)日：2015-07-23

申请号：US14565703

申请日：2014-12-10

Applicant: Lasertec Corporation

Inventor： Haruhiko KUSUNOSE ,  Kiwamu TAKEHISA

IPC: G01J9/02 ,  G01B9/02

CPC classification number: G01J9/02 ,  G01B9/02041 ,  G01B9/02049 ,  G01B9/02098 ,  G01B2290/30 ,  G01J9/0215 ,  G01J2009/0219 ,  G01N21/45 ,  G03F1/26 ,  G03F1/84

Abstract: The present invention is directed to the provision of an interferometer and a phase shift amount measuring apparatus that can precisely operate in the EUV region. The interferometer according to the invention comprises an illumination source for generating an illumination beam, an illumination system for projecting the illumination beam emitted from the illumination source onto a sample, and an imaging system for directing the reflected beam by the sample onto a detector. The illumination system includes a first diffraction grating for producing a first and second diffraction beams which respectively illuminate two areas on the sample where are shifted from each other by a given distance, and the imaging system includes a second grating for diffracting the first and second diffraction beams reflected by the sample to produce a third and fourth diffraction beams which are shifted from each other by a given distance.

Abstract translation: 本发明涉及提供一种能够在EUV区域中精确地工作的干涉仪和相移量测量装置。 根据本发明的干涉仪包括用于产生照明光束的照明源，用于将从照明源发射的照射光束投射到样本上的照明系统，以及用于将由样品引导到检测器的反射光束的成像系统。 照明系统包括：第一衍射光栅，用于产生第一和第二衍射光束，其分别照射样品上彼此偏移给定距离的两个区域，并且成像系统包括用于衍射第一和第二衍射的第二光栅 由样品反射的光束以产生彼此偏移给定距离的第三和第四衍射光束。

公开(公告)号：US20200182803A1

公开(公告)日：2020-06-11

申请号：US16709630

申请日：2019-12-10

Applicant: Lasertec Corporation

Inventor： Tetsuya SENDODA ,  Kiwamu TAKEHISA ,  Takayuki ISHIDA

IPC: G01N21/88 ,  G01N21/956 ,  G01N21/21

Abstract: A mask inspection apparatus according to the present disclosure includes: a field stop unit capable of switching between a field stop for an optical mask configured to emit an incident illumination light while maintaining the polarization state thereof and a field stop for an EUV mask configured to change the polarization state of a part of the incident illumination light and to cause an illumination light including an S-polarized light and a P-polarized light; a beam splitter unit capable of switching between a PBS for an optical mask and a non-polarized BS; an objective lens configured to collect an illumination light reflected in the beam splitter unit in a mask to be inspected and collect a reflected light obtained by reflecting an illumination light in the mask to be inspected; and a λ/4 plate that can be provided in an optical path of an illumination light and a reflected light.

公开(公告)号：US20130234597A1

公开(公告)日：2013-09-12

申请号：US13788005

申请日：2013-03-07

Applicant: LASERTEC CORPORATION

Inventor： Haruhiko KUSUNOSE ,  Kiwamu TAKEHISA ,  Tomohiro SUZUKI ,  Hiroki MIYAI

IPC: H01J1/52 ,  H05H1/24

CPC classification number: H01J1/52 ,  G03F7/70033 ,  G03F7/70916 ,  H05G2/003 ,  H05G2/005 ,  H05H1/24

Abstract: The plasma shield device (13) comprises a hollow structure (40) made of monocrystal body of silicon carbide and having an inside space (40a) and a first and second openings (40b,40c) which are opposed to each other across the inside space. During operation of the plasma generation apparatus, the internal space of the hollow structure forms a discharge zone in which the plasma is generated. Discharge gas is supplied to the internal space of the hollow structure through the first opening and the EUV radiation is mainly emitted through the second opening.

Abstract translation: 等离子体屏蔽装置（13）包括由碳化硅单晶体制成的具有内部空间（40a）和第一和第二开口（40b，40c）的中空结构（40），所述内部空间（40a）和第二开口（40b，40c） 。 在等离子体产生装置的操作期间，中空结构的内部空间形成其中产生等离子体的放电区。 排出气体通过第一开口供应到中空结构的内部空间，并且EUV辐射主要通过第二开口排出。

公开(公告)号：US20180276812A1

公开(公告)日：2018-09-27

申请号：US15933408

申请日：2018-03-23

Applicant: LASERTEC CORPORATION

Inventor： Tsunehito KOHYAMA ,  Haruhiko KUSUNOSE ,  Kiwamu TAKEHISA ,  Hiroki MIYAI ,  Itaru MATSUGU

IPC: G06T7/00 ,  G06T5/00 ,  G01N21/956 ,  H04N5/225 ,  H04N5/372

CPC classification number: G06T7/0008 ,  G01N21/956 ,  G01N2021/95676 ,  G01N2201/061 ,  G01N2201/12 ,  G03F1/84 ,  G06T5/001 ,  G06T2207/10152 ,  H04N5/2256 ,  H04N5/372

Abstract: A correction method according to an embodiment includes illuminating an object to be inspected by using critical illumination by illumination light L11 generated by a light source 11, concentrating light from the object to be inspected illuminated by the illumination light L11 and acquiring image data of the object to be inspected by detecting the concentrated light by a first detector 23, concentrating part of the illumination light L11, and acquiring image data of a brightness distribution of the illumination light L11 by detecting the concentrated illumination light L11 by a second detector 33, and correcting the image data of the object to be inspected based on the image data of the brightness distribution.

公开(公告)号：US20170235031A1

公开(公告)日：2017-08-17

申请号：US15331575

申请日：2016-10-21

Applicant: Lasertec Corporation

Inventor： Kiwamu TAKEHISA ,  Hiroki MIYAI

IPC: G02B5/08 ,  B08B7/00 ,  G02B19/00 ,  G02B17/00 ,  G02B5/18 ,  G02B7/182

CPC classification number: G02B5/0891 ,  B08B7/0042 ,  B08B7/0057 ,  G01N21/00 ,  G01N21/88 ,  G01N21/958 ,  G02B5/0816 ,  G02B5/1814 ,  G02B5/1838 ,  G02B5/1861 ,  G02B7/1821 ,  G02B17/004 ,  G02B19/0004 ,  G02B19/0095 ,  G02B27/425 ,  G02B27/4294

Abstract: Provided are a mask inspection apparatus and a mask inspection method that can prevent a reduction in a reflectance of a drop-in mirror, which is caused by carbon contaminants. A mask inspection apparatus according to the present invention includes a drop-in mirror including multi-layer film and a reflective surface. The drop-in mirror is configured to reflect illumination light incident on the reflective surface and illuminate the mask. An area of the reflective surface is configured to be greater than an area of an illuminated spot irradiated with the illumination light on the reflective surface. The drop-in mirror is configured to be movable. A position of the illuminated spot on the reflective surface is configured to be moved when the drop-in mirror is moved.

公开(公告)号：US20210247323A1

公开(公告)日：2021-08-12

申请号：US17168053

申请日：2021-02-04

Applicant: Lasertec Corporation

Inventor： Kiwamu TAKEHISA ,  Tsunehito KOHYAMA ,  Hiroki MIYAI ,  Haruhiko KUSUNOSE

IPC: G01N21/88 ,  G02B5/10 ,  G02B17/08 ,  G01N21/956

Abstract: An inspection device according to the present disclosure includes a spheroidal mirror configured to reflect illumination light as convergent light, a plane mirror configured to reflect the illumination light incident as the convergent light and cause the reflected illumination light to be incident on an object of inspection as incident light, a projection optical system configured to focus reflected light of the incident light reflected by the object of inspection, and a detector configured to detect reflected light focused by the projection optical system, wherein an angle of incidence of an incident optical axis being an optical axis of the incident light on the object of inspection is greater than 6 [deg], an angle of reflection of a reflected optical axis being an optical axis of the reflected light on the object of inspection is greater than 6 [deg].

公开(公告)号：US20150293460A1

公开(公告)日：2015-10-15

申请号：US14683560

申请日：2015-04-10

Applicant: Lasertec Corporation

Inventor： Kiwamu TAKEHISA ,  Atsushi TAJIMA ,  Haruhiko KUSUNOSE

IPC: G03F7/20

CPC classification number: G03F1/84 ,  G03F1/62

Abstract: Provided with a pellicle inspection apparatus that inspects a pellicle film of a mask provided with a pellicle and used in EUV lithography. The pellicle inspection apparatus includes: an illumination optical system that projects a converging illuminating beam toward the pellicle film;a light collection optical system including an object lens having an optical axis substantially orthogonal to the pellicle film and that collects scattering light outgoing from a foreign substance present on the pellicle film; and a detection system that detects the scattering light collected by the light collection optical system, wherein an incident angle θ2 of the illuminating beam with respect to the pellicle film satisfies Expression θ2−θ0>θ1+23°, where θ0 is a collecting angle (half angle) of the illuminating beam, and θ1 is a maximum light-receiving angle (half angle) of the object lens.

Abstract translation: 提供一种防护薄膜组件检查装置，其检查设有防护薄膜的掩模的防护薄膜，并用于EUV光刻。 防护薄膜检查装置包括：照射光学系统，其将会聚的照明光束投射到防护薄膜上; 光收集光学系统，其包括物镜，所述物镜具有基本上垂直于所述防护薄膜的光轴并且收集从所述防护薄膜上存在的异物射出的散射光; 以及检测系统，其检测由所述光收集光学系统收集的散射光，其中所述照明光束相对于所述防护薄膜的入射角和角度2满足表达式;所述2＆ ，其中＆thetas; 0是照明光束的收集角（半角），＆lt; 1＆gt;; 1是物镜的最大光接收角（半角）。

公开(公告)号：US20150244142A1

公开(公告)日：2015-08-27

申请号：US14626005

申请日：2015-02-19

Applicant: Lasertec Corporation

Inventor： Kiwamu TAKEHISA ,  Jun SAKUMA

IPC: H01S5/00 ,  G01N21/88 ,  G02F1/35

CPC classification number: H01S5/0092 ,  G01N21/8806 ,  G01N21/956 ,  G02F1/353 ,  G02F2001/354 ,  G03F1/84 ,  G03F7/7065 ,  H01S3/1611 ,  H01S3/1618

Abstract: A laser light source device having a simple configuration and an inspection device are provided. A laser light source device 200 according to an exemplary embodiment in accordance with the present invention has a repetition frequency of 1 MHz or higher, and includes fundamental wave generation means 201 for oscillating laser light including a fundamental wave with its center wavelength being included in one of first to fourth wavelength bands, and means 205 for generating a sixth harmonic of pulsed laser light extracted from the fundamental wave generation means 201. The first wavelength band is 1064.326 nm to 1064.511 nm. The second wavelength band is 1064.757 nm to 1064.852 nm. The third wavelength band is 1063.805 nm to 1063.878 nm. Further, the fourth wavelength band is 1063.962 nm to 1064.031 nm.

Abstract translation: 提供具有简单结构的激光光源装置和检查装置。 根据本发明的示例性实施例的激光源装置200具有1MHz或更高的重复频率，并且包括用于振荡包括其中心波长的基波的激光的基波产生装置201， 第一波长带和第四波长带，以及用于产生从基波发生装置201提取的脉冲激光的六次谐波的装置205.第一波长带为1064.326nm至1064.511nm。 第二波长带为1064.757nm至1064.852nm。 第三波长带为1063.805nm至1063.878nm。 此外，第四波长带为1063.962nm至1064.031nm。