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公开(公告)号:US20240295969A1
公开(公告)日:2024-09-05
申请号:US18592763
申请日:2024-03-01
Applicant: Kioxia Corporation
Inventor: Suguru NISHIKAWA , Takehiko AMAKI , Shunichi IGAHARA , Toshikatsu HIDA , Yoshihisa KOJIMA
IPC: G06F3/06
CPC classification number: G06F3/0619 , G06F3/0656 , G06F3/0659 , G06F3/0679
Abstract: According to an embodiment, a memory system includes a nonvolatile memory and a memory controller. The nonvolatile memory includes a first memory cell configured to nonvolatilely store data of a plurality of bits including a first bit and a second bit, and a second memory cell configured to nonvolatilely store data of at least one bit. The memory controller is configured to execute a save operation in accordance with reception of a command from a host, in the save operation, write first bit data to the second memory cell in a case where the first memory cell stores the first bit data as the first bit and does not store data as the second bit, and transmit, to the host, a completion response to the command after the first bit data has been written to the second memory cell.
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公开(公告)号:US20240021252A1
公开(公告)日:2024-01-18
申请号:US18365929
申请日:2023-08-04
Applicant: Kioxia Corporation
Inventor: Yoshihisa KOJIMA
CPC classification number: G11C16/32 , G11C16/26 , G11C16/08 , G11C11/5628 , G11C16/3495 , G11C16/0483 , G11C7/04 , G11C16/10 , G11C2211/5648
Abstract: A memory system includes a nonvolatile memory configured to execute one of a plurality of read operations, including a first read operation and a second read operation, and a memory controller configured to issue a read command to the nonvolatile memory to cause the nonvolatile memory to execute one of the plurality of read operations. The memory controller is configured to receive a read request, estimate a reliability level of a result of a read operation to be executed by the nonvolatile memory to read data from a physical address specified in the read request, select one of the first and second read operations to be executed first in a read sequence corresponding to the read request by the nonvolatile memory based on the estimated reliability level, and instruct the nonvolatile memory to execute the selected read operation.
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公开(公告)号:US20230402100A1
公开(公告)日:2023-12-14
申请号:US18455575
申请日:2023-08-24
Applicant: KIOXIA CORPORATION
Inventor: Riki SUZUKI , Yoshihisa KOJIMA
CPC classification number: G11C16/10 , G11C16/26 , G11C16/08 , G11C29/44 , G11C16/22 , G11C7/1045 , G11C29/42 , G11C16/30
Abstract: A memory system includes a non-volatile memory having a plurality of memory cells and a controller. The controller is configured to switch a mode for controlling an access operation to the non-volatile memory from a first mode to a second mode, in response to receiving from a host, a first command for instructing the controller to switch the mode from the first mode to the second mode. The access operation controlled according to the second mode improves data retention relative to the access operation controlled according to the first mode.
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公开(公告)号:US20230342051A1
公开(公告)日:2023-10-26
申请号:US18343835
申请日:2023-06-29
Applicant: KIOXIA CORPORATION
Inventor: Shunichi IGAHARA , Toshikatsu HIDA , Riki SUZUKI , Takehiko AMAKI , Suguru NISHIKAWA , Yoshihisa KOJIMA
CPC classification number: G06F3/0634 , G06F3/0604 , G06F3/061 , G06F3/0619 , G06F3/0659 , G06F3/0679 , G06F12/0253 , G06F12/10 , G06F2212/1044 , G06F2212/657
Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a controller electrically connected to the nonvolatile memory. The controller selects a write mode from a first mode in which data having N bits is written per one memory cell and a second mode in which data having M bits is written per one memory cell. N is equal to or larger than one. M is larger than N. The controller writes data into the nonvolatile memory in the selected write mode. The controller selects either the first mode or the second mode at least based on a total number of logical addresses mapped in a physical address space of the nonvolatile memory.
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公开(公告)号:US20230101298A1
公开(公告)日:2023-03-30
申请号:US18075601
申请日:2022-12-06
Applicant: KIOXIA CORPORATION
Inventor: Riki SUZUKI , Yoshihisa KOJIMA
Abstract: A memory system includes a non-volatile memory having a plurality of memory cells and a controller. The controller is configured to switch a mode for controlling an access operation to the non-volatile memory from a first mode to a second mode, in response to receiving from a host, a first command for instructing the controller to switch the mode from the first mode to the second mode. The access operation controlled according to the second mode improves data retention relative to the access operation controlled according to the first mode.
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公开(公告)号:US20220083264A1
公开(公告)日:2022-03-17
申请号:US17199586
申请日:2021-03-12
Applicant: Kioxia Corporation
Inventor: Yoshihisa KOJIMA , Riki SUZUKI
Abstract: A memory system includes a controller that transmits, to a memory chip, one first command set indicating a head of a third storage area being one of second storage areas, in a case where first data is read to a first buffer of the memory chip. The first data includes a plurality of first data segments having been stored in the second storage areas. The memory chip includes circuitry that outputs a second data segment and a third data segment to the controller in a period after the controller transmits the first command set to the memory chip before the controller transmits a second command set to the memory chip. The second data segment is a data segment having been stored in the third storage area. The third data segment is a data segment having been stored in a fourth storage area different from the third storage area.
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公开(公告)号:US20210081276A1
公开(公告)日:2021-03-18
申请号:US16806131
申请日:2020-03-02
Applicant: KIOXIA CORPORATION
Inventor: Riki SUZUKI , Toshikatsu HIDA , Yoshihisa KOJIMA , Takehiko AMAKI , Suguru NISHIKAWA
Abstract: A memory system includes a nonvolatile memory, a buffer, and a controller. The buffer can temporarily store a plurality of data bits to be written to the nonvolatile memory. The controller can write the plurality of data bits, read from the buffer, to the nonvolatile memory; write a plurality of intermediate parity bits to the buffer, but not to the nonvolatile memory, wherein each of the plurality of intermediate parity bits is associated with an error correction process on each of the plurality of data bits; and write, to the nonvolatile memory, an accumulated parity bit that is an integration of the plurality of intermediate parity bits.
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公开(公告)号:US20240420778A1
公开(公告)日:2024-12-19
申请号:US18815516
申请日:2024-08-26
Applicant: Kioxia Corporation
Inventor: Tsukasa TOKUTOMI , Masanobu SHIRAKAWA , Kengo KUROSE , Marie TAKADA , Ryo YAMAKI , Kiyotaka IWASAKI , Yoshihisa KOJIMA
IPC: G11C16/26 , G06F3/06 , G06F11/10 , G11C11/56 , G11C16/04 , G11C16/08 , G11C29/52 , H10B43/27 , H10B43/35
Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a memory controller. The memory controller is configured: to store, in a buffer, a data set read from a cell unit, and an expected data set generated by an error correction on the data set; to count a number of first and second memory cells corresponding to a first and a second combination of data in the data set and the expected data set, respectively, among the memory cells in the cell unit; to calculate a shift amount of a read voltage used in a read operation from the cell unit, based on the number of the first and second memory cells; and to apply the shift amount to a next read operation from the first cell unit.
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公开(公告)号:US20240176490A1
公开(公告)日:2024-05-30
申请号:US18431159
申请日:2024-02-02
Applicant: KIOXIA CORPORATION
Inventor: Yoshihisa KOJIMA , Masanobu SHIRAKAWA , Kiyotaka IWASAKI
IPC: G06F3/06
CPC classification number: G06F3/0611 , G06F3/0656 , G06F3/0659 , G06F3/0679
Abstract: According to one embodiment, there is provided a nonvolatile memory including a memory cell array, an input/output buffer, one or more intermediate buffers, and a control circuit. The memory cell array includes a plurality of pages. Each of the one or more intermediate buffers is electrically connected between the memory cell array and the input/output buffer. The control circuit is configured to store, in a first intermediate buffer, data read through sensing operation from a first page out of the plurality of pages in accordance with a first command that includes a sensing operation instruction and designation of the first intermediate buffer among the one or more intermediate buffers.
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公开(公告)号:US20230420060A1
公开(公告)日:2023-12-28
申请号:US18459501
申请日:2023-09-01
Applicant: KIOXIA CORPORATION
Inventor: Tomoya KAMATA , Yoshihisa KOJIMA , Suguru NISHIKAWA
Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a memory controller configured to cause the nonvolatile memory to execute a first process of reading data based on a first request from a host device. The memory controller is configured to, when the first request is received from the host device while causing the nonvolatile memory to execute a second process, hold interruption of the second process until a first number becomes a first threshold value or more. The first number is a number of the first requests to be performed in the memory controller. The first threshold value is an integer of 2 or more.
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