公开(公告)号：US20210273055A1

公开(公告)日：2021-09-02

申请号：US17019683

申请日：2020-09-14

申请人： Kioxia Corporation

发明人： Naomi YANAI ,  Yasuhito YOSHIMIZU ,  Takashi ISHIDA

IPC分类号： H01L29/10 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/423 ,  H01L29/66 ,  H01L29/792 ,  H01L29/788

摘要： A semiconductor storage device according to the present embodiment includes a first semiconductor layer containing impurities. A stacked body is provided above the first semiconductor layer and includes insulating layers and conductive layers that are alternately stacked. A semiconductor body penetrates through the stacked body in a stacking direction to reach the first semiconductor layer and includes a lower region on a side of the first semiconductor layer and an upper region positioned above the lower region. A charge accumulation part is provided between the semiconductor bodies and the conductive layers. An impurity concentration of the lower region of the semiconductor body is higher than that of the first semiconductor layer.

公开(公告)号：US20230307265A1

公开(公告)日：2023-09-28

申请号：US17898143

申请日：2022-08-29

申请人： KIOXIA CORPORATION

发明人： Takaumi MORITA ,  Hiroshi FUJITA ,  Tatsuhiko KOIDE ,  Naomi YANAI ,  Tsubasa WATANABE

IPC分类号： H01L21/67

CPC分类号： H01L21/67086

摘要： According to one embodiment, a substrate processing apparatus includes a processing tank configured to store a chemical solution for processing a substrate by immersion in a chemical solution. The substrate is held by a holding member during the processing. A lid is configured to open and close an upper end portion of the processing tank. The lid has a first bubble dispensing pipe formed or integrated therein. The first bubble dispensing pipe is configured to dispense a gas into the processing tank. A bottom surface side of the lid on a processing tank side may come into direct contact with the chemical solution in some examples. The first bubble dispensing pipe may dispense an inert gas into the chemical solution to improve process stability or the like.

公开(公告)号：US20240297146A1

公开(公告)日：2024-09-05

申请号：US18589254

申请日：2024-02-27

申请人： Kioxia Corporation

发明人： Shota KONUMA ,  Hiroshi FUJITA ,  Hisashi KATO ,  Naomi YANAI

IPC分类号： H01L23/00 ,  H01L21/265 ,  H01L21/324 ,  H10B80/00

CPC分类号： H01L24/96 ,  H01L21/2652 ,  H01L21/324 ,  H10B80/00 ,  H01L2224/96

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes forming, on a substrate, an active layer in which a dopant is implanted; forming a porous layer by making the active layer porous by an anodization treatment; forming a device layer including at least a part of a configuration of the semiconductor device above the porous layer; and cleaving the porous layer to remove the substrate.

公开(公告)号：US20220085153A1

公开(公告)日：2022-03-17

申请号：US17196186

申请日：2021-03-09

申请人： Kioxia Corporation

发明人： Fuyuma ITO ,  Tatsuhiko KOIDE ,  Hiroki NAKAJIMA ,  Naomi YANAI ,  Tomohiko SUGITA ,  Hakuba KITAGAWA ,  Takaumi MORITA

IPC分类号： H01L29/06 ,  H01L21/768 ,  H01L27/06 ,  H01L21/02

摘要： A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depression. The depression has a depth from a direction along a surface of the inner wall surface to a width direction of the groove. The substrate being exposed to the inner wall surface.