公开(公告)号：US20210280438A1

公开(公告)日：2021-09-09

申请号：US17119043

申请日：2020-12-11

申请人： Kioxia Corporation

发明人： Katsuhiro SATO ,  Hiroshi FUJITA ,  Yoshinori KITAMURA ,  Satoshi NAKAOKA ,  Tomohiko SUGITA

IPC分类号： H01L21/67 ,  H01L21/306

摘要： In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, and a pipe configured to supply the container with liquid to treat the substrate. The apparatus further includes an ejector including a first passage where the liquid introduced from the pipe and the liquid introduced from the container are joined and pass through, and a first opening configured to eject the liquid that has passed through the first passage. Furthermore, the first passage has an area where a sectional area of the first passage becomes large as advancing downstream in the liquid.

公开(公告)号：US20230307265A1

公开(公告)日：2023-09-28

申请号：US17898143

申请日：2022-08-29

申请人： KIOXIA CORPORATION

发明人： Takaumi MORITA ,  Hiroshi FUJITA ,  Tatsuhiko KOIDE ,  Naomi YANAI ,  Tsubasa WATANABE

IPC分类号： H01L21/67

CPC分类号： H01L21/67086

摘要： According to one embodiment, a substrate processing apparatus includes a processing tank configured to store a chemical solution for processing a substrate by immersion in a chemical solution. The substrate is held by a holding member during the processing. A lid is configured to open and close an upper end portion of the processing tank. The lid has a first bubble dispensing pipe formed or integrated therein. The first bubble dispensing pipe is configured to dispense a gas into the processing tank. A bottom surface side of the lid on a processing tank side may come into direct contact with the chemical solution in some examples. The first bubble dispensing pipe may dispense an inert gas into the chemical solution to improve process stability or the like.

公开(公告)号：US20220310401A1

公开(公告)日：2022-09-29

申请号：US17466273

申请日：2021-09-03

申请人： Kioxia Corporation

发明人： Hakuba KITAGAWA ,  Tatsuhiko KOIDE ,  Hiroshi FUJITA

IPC分类号： H01L21/311 ,  H01L21/306 ,  H01L21/3213 ,  C09K13/06

摘要： According to one embodiment, a chemical solution comprises a mixed acid including an inorganic acid, an oxidizing agent, a carboxylic acid, and water; and polyethyleneimine of a concentration in the chemical solution in a range of 0.05 wt % to 10 wt %.

公开(公告)号：US20220068673A1

公开(公告)日：2022-03-03

申请号：US17198728

申请日：2021-03-11

申请人： Kioxia Corporation

发明人： Satoshi NAKAOKA ,  Yuji HASHIMOTO ,  Hiroshi FUJITA

IPC分类号： H01L21/67 ,  H01L21/311

摘要： A substrate treatment apparatus according to an embodiment includes: a tank configured to store a liquid chemical with which a plurality of substrates are treated; a piping having an ejection port that ejects the liquid chemical or bubbles into the tank; a plurality of rods that support the plurality of substrates in the tank; and a converter that is provided in the plurality of rods or the tank and that converts vibration applied to each substrate by the liquid chemical or the bubbles ejected from the piping into rotation in one direction around a center of the substrate as a rotational axis.

公开(公告)号：US20240087918A1

公开(公告)日：2024-03-14

申请号：US18458034

申请日：2023-08-29

申请人： Kioxia Corporation

发明人： Tomohiko SUGITA ,  Hiroshi FUJITA ,  Tatsuhiko KOIDE ,  Katsuhiro SATO

IPC分类号： H01L21/67 ,  H01L21/311

CPC分类号： H01L21/67086 ,  H01L21/31111

摘要： According to one embodiment, a substrate processing apparatus has a treatment tank, a holder to hold the substrate while in the treatment tank, a chemical discharge pipe below a position of the holder for supplying a chemical solution to the treatment tank, a bubble discharge pipe below the position of the holder for discharging a gas. The first bubble discharge pipe is closer along a horizontal direction to a centerline of the treatment tank than is the chemical discharge pipe. A rectifying plate is disposed below the position of the holder and extends from a position above the chemical discharge pipe to a position above the first bubble discharge pipe at an incline with respect to the first direction horizontal.

公开(公告)号：US20240297146A1

公开(公告)日：2024-09-05

申请号：US18589254

申请日：2024-02-27

申请人： Kioxia Corporation

发明人： Shota KONUMA ,  Hiroshi FUJITA ,  Hisashi KATO ,  Naomi YANAI

IPC分类号： H01L23/00 ,  H01L21/265 ,  H01L21/324 ,  H10B80/00

CPC分类号： H01L24/96 ,  H01L21/2652 ,  H01L21/324 ,  H10B80/00 ,  H01L2224/96

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes forming, on a substrate, an active layer in which a dopant is implanted; forming a porous layer by making the active layer porous by an anodization treatment; forming a device layer including at least a part of a configuration of the semiconductor device above the porous layer; and cleaving the porous layer to remove the substrate.

公开(公告)号：US20230306582A1

公开(公告)日：2023-09-28

申请号：US17942752

申请日：2022-09-12

申请人： Kioxia Corporation

发明人： Masahiro HAYASHI ,  Shinichiro MANABE ,  Osamu TORII ,  Tatsuya ZETTSU ,  Hiroshi FUJITA ,  Ryota YOSHIZAWA

IPC分类号： G06T7/00 ,  G01N21/95 ,  G06T3/40 ,  G06T5/00

CPC分类号： G06T7/001 ,  G01N21/9501 ,  G06T3/40 ,  G06T5/002 ,  G06T2207/30148 ,  G06T2200/24 ,  G06T2207/20081

摘要： An information processing apparatus has an objective variable acquirer configured to acquire a multi-dimensional objective variable, an objective variable dimension compressor configured to compress the number of dimensions of the objective variable, an explanatory variable acquirer configured to acquire an explanatory variable, and an influence degree calculator configured to set at least one of a basis characterizing the objective variable and a coefficient weighting the basis as a new objective variable and calculate an influence degree on the new objective variable by using the explanatory variable.

公开(公告)号：US20220406626A1

公开(公告)日：2022-12-22

申请号：US17682745

申请日：2022-02-28

申请人： KIOXIA CORPORATION

发明人： Tomohiko SUGITA ,  Hiroshi FUJITA ,  Tatsuhiko KOIDE

IPC分类号： H01L21/67 ,  H01L21/677 ,  H01L21/311

摘要： According to one embodiment, a substrate processing device includes a processing tank to store a liquid and to permit a plurality of substrates to be immersed in the liquid at the same time. The device also has a holder member configured to hold the plurality of substrates while the substrates are immersed into and withdrawn from the liquid in the processing tank as well as a straightening vane configured to be positioned in the liquid above the plurality of substrates in the processing tank. The straightening vane includes vane portions extending in a vertical direction into the processing tank that have a length in the vertical direction that is greater than a cross sectional width in a horizontal direction perpendicular to the vertical direction. A bubble discharge pipe is disposed in the processing tank below the holder member. The bubble discharge pipe discharges gas into the liquid.