公开(公告)号：US20240297146A1

公开(公告)日：2024-09-05

申请号：US18589254

申请日：2024-02-27

申请人： Kioxia Corporation

发明人： Shota KONUMA ,  Hiroshi FUJITA ,  Hisashi KATO ,  Naomi YANAI

IPC分类号： H01L23/00 ,  H01L21/265 ,  H01L21/324 ,  H10B80/00

CPC分类号： H01L24/96 ,  H01L21/2652 ,  H01L21/324 ,  H10B80/00 ,  H01L2224/96

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes forming, on a substrate, an active layer in which a dopant is implanted; forming a porous layer by making the active layer porous by an anodization treatment; forming a device layer including at least a part of a configuration of the semiconductor device above the porous layer; and cleaving the porous layer to remove the substrate.