知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.051 seconds)

    Nonvolatile semiconductor memory device and method for manufacturing same
    1.
    发明授权
    Nonvolatile semiconductor memory device and method for manufacturing same 有权

    公开(公告)号：US12193226B2

    公开(公告)日：2025-01-07

    申请号：US18344957

    申请日：2023-06-30

    Applicant: Kioxia Corporation

    Inventor： Keiichi Sawa

    IPC: H01L29/66 ,  H01L29/788 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35

    Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of U-shaped memory strings, each of the plurality of U-shaped memory strings including a first columnar body, a second columnar body, and a conductive connection body. The conductive connection body connects the first columnar body and the second columnar body. A plurality of first memory cells are connected in series in the first columnar body and are composed of a plurality of first conductive layers, a first inter-gate insulating film, a plurality of first floating electrodes, a first tunnel insulating film, and a first memory channel layer. The plurality of first floating electrodes are separated from the plurality of first conductive layers by the first inter-gate insulating film. A plurality of second memory cells are connected in series in the second columnar body, similarly to the plurality of first memory cells.

    Nonvolatile semiconductor memory device and method for manufacturing same
    3.
    发明授权
    Nonvolatile semiconductor memory device and method for manufacturing same 有权

    公开(公告)号：US11737262B2

    公开(公告)日：2023-08-22

    申请号：US17224356

    申请日：2021-04-07

    Applicant: Kioxia Corporation

    Inventor： Keiichi Sawa

    IPC: H01L29/66 ,  H10B41/27 ,  H01L29/788 ,  H10B41/10 ,  H10B41/35

    CPC classification number: H10B41/27 ,  H01L29/66825 ,  H01L29/788 ,  H01L29/7889 ,  H10B41/10 ,  H10B41/35

    Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of U-shaped memory strings, each of the plurality of U-shaped memory strings including a first columnar body, a second columnar body, and a conductive connection body. The conductive connection body connects the first columnar body and the second columnar body. A plurality of first memory cells are connected in series in the first columnar body and are composed of a plurality of first conductive layers, a first inter-gate insulating film, a plurality of first floating electrodes, a first tunnel insulating film, and a first memory channel layer. The plurality of first floating electrodes are separated from the plurality of first conductive layers by the first inter-gate insulating film. A plurality of second memory cells are connected in series in the second columnar body, similarly to the plurality of first memory cells.

    Semiconductor device and semiconductor memory device
    6.
    发明授权
    Semiconductor device and semiconductor memory device 有权

    公开(公告)号：US11349033B2

    公开(公告)日：2022-05-31

    申请号：US17022328

    申请日：2020-09-16

    Applicant: Kioxia Corporation

    Inventor： Tomoki Ishimaru ,  Shinji Mori ,  Kazuhiro Matsuo ,  Keiichi Sawa ,  Akifumi Gawase

    IPC: H01L29/786 ,  H01L27/108 ,  H01L29/267 ,  H01L29/08 ,  H01L29/417 ,  H01L29/40

    Abstract: A semiconductor device of an embodiment includes a first electrode, a second electrode, a first metallic region provided between the first electrode and the second electrode and includes at least one metallic element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), aluminum (Al), magnesium (Mg), manganese (Mn), titanium (Ti), tungsten (W), molybdenum (Mo), and tin (Sn), a second metallic region provided between the first metallic region and the second electrode and includes the at least one metallic element, a semiconductor region provided between the first metallic region and the second metallic region and includes the at least one metallic element and oxygen (O), an insulating region provided between the first metallic region and the second metallic region and is surrounded by the semiconductor region, a gate electrode surrounding the semiconductor region, and a gate insulating layer provided between the semiconductor region and the gate electrode.

Patent Agency Ranking