公开(公告)号：US11751397B2

公开(公告)日：2023-09-05

申请号：US17850699

申请日：2022-06-27

Applicant: KIOXIA CORPORATION

Inventor： Yuta Saito ,  Shinji Mori ,  Atsushi Takahashi ,  Toshiaki Yanase ,  Keiichi Sawa ,  Kazuhiro Matsuo ,  Hiroyuki Yamashita

IPC: H10B43/27 ,  H01L21/02 ,  H01L29/04

CPC classification number: H10B43/27 ,  H01L21/02672 ,  H01L29/045

Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.