公开(公告)号：US11974432B2

公开(公告)日：2024-04-30

申请号：US17412743

申请日：2021-08-26

Applicant: KIOXIA CORPORATION

Inventor： Hiroyuki Yamashita ,  Yuta Saito ,  Keiichi Sawa ,  Kazuhiro Matsuo ,  Yuta Kamiya ,  Shinji Mori ,  Kota Takahashi ,  Junichi Kaneyama ,  Tomoki Ishimaru ,  Kenichiro Toratani ,  Ha Hoang ,  Shouji Honda ,  Takafumi Ochiai

IPC: H10B43/27 ,  H01L21/28 ,  H01L29/423 ,  H10B41/27

CPC classification number: H10B43/27 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/4234 ,  H10B41/27

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

公开(公告)号：US12101928B2

公开(公告)日：2024-09-24

申请号：US17460967

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Natsuki Fukuda ,  Ryota Narasaki ,  Takashi Kurusu ,  Yuta Kamiya ,  Kazuhiro Matsuo ,  Shinji Mori ,  Shoji Honda ,  Takafumi Ochiai ,  Hiroyuki Yamashita ,  Junichi Kaneyama ,  Ha Hoang ,  Yuta Saito ,  Kota Takahashi ,  Tomoki Ishimaru ,  Kenichiro Toratani

IPC: H10B41/27 ,  H10B41/10 ,  H10B43/10 ,  H10B43/27

CPC classification number: H10B41/27 ,  H10B41/10 ,  H10B43/10 ,  H10B43/27

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer being interposed between the portion of the first charge storage layer and the second charge storage layer in the second direction.

公开(公告)号：US20220302162A1

公开(公告)日：2022-09-22

申请号：US17412743

申请日：2021-08-26

Applicant: Kioxia Corporation

Inventor： Hiroyuki Yamashita ,  Yuta Saito ,  Keiichi Sawa ,  Kazuhiro Matsuo ,  Yuta Kamiya ,  Shinji Mori ,  Kota Takahashi ,  Junichi Kaneyama ,  Tomoki Ishimaru ,  Kenichiro Toratani ,  Ha Hoang ,  Shouji Honda ,  Takafumi Ochiai

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L29/423 ,  H01L21/28

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

公开(公告)号：US11349033B2

公开(公告)日：2022-05-31

申请号：US17022328

申请日：2020-09-16

Applicant: Kioxia Corporation

Inventor： Tomoki Ishimaru ,  Shinji Mori ,  Kazuhiro Matsuo ,  Keiichi Sawa ,  Akifumi Gawase

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/267 ,  H01L29/08 ,  H01L29/417 ,  H01L29/40

Abstract: A semiconductor device of an embodiment includes a first electrode, a second electrode, a first metallic region provided between the first electrode and the second electrode and includes at least one metallic element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), aluminum (Al), magnesium (Mg), manganese (Mn), titanium (Ti), tungsten (W), molybdenum (Mo), and tin (Sn), a second metallic region provided between the first metallic region and the second electrode and includes the at least one metallic element, a semiconductor region provided between the first metallic region and the second metallic region and includes the at least one metallic element and oxygen (O), an insulating region provided between the first metallic region and the second metallic region and is surrounded by the semiconductor region, a gate electrode surrounding the semiconductor region, and a gate insulating layer provided between the semiconductor region and the gate electrode.