Chemical mechanical polishing conditioner

    公开(公告)号:US09821431B2

    公开(公告)日:2017-11-21

    申请号:US15015670

    申请日:2016-02-04

    申请人: Kinik Company

    IPC分类号: B24B53/00 B24B53/017

    CPC分类号: B24B53/017

    摘要: Provided is a CMP conditioner comprising: a substrate, multiple abrasive bars, and multiple slide blocks. The substrate is divided into a central surface and an outer surface. The central surface is a recessed part. The outer surface encompasses the central surface. Multiple mounting holes are recessed from the outer surface. The abrasive bars are each respectively mounted in the mounting holes. Each of the multiple abrasive bars comprises a bar body and an abrasive particle. The abrasive particle is mounted on a top surface of the abrasive bar. The multiple slide blocks are distributed among the mounting holes of the outer surface. Each of the multiple slide blocks comprises a slide dressing surface. The present invention utilizes the slide blocks to reduce the contact between the substrate and a polishing mat efficiently. The slide blocks may decrease dissolving out of metal components within the substrate and the pollution induced.

    Grinding tool and method of manufacturing the same

    公开(公告)号:US09616550B2

    公开(公告)日:2017-04-11

    申请号:US14887347

    申请日:2015-10-20

    申请人: Kinik Company

    IPC分类号: B24D11/00 B24D18/00

    CPC分类号: B24D11/00 B24D18/0072

    摘要: A grinding tool includes a rigid support body and a carrier substrate. The carrier substrate is attached to the support body, and is supported by the support body. Two opposing surfaces of the carrier substrate respectively define a working surface and a non-working surface. A plurality of first abrasive particles are affixed on the working surface, and a plurality of second abrasive particles are affixed on the non-working surface. The first abrasive particles have a first average size, and the second abrasive particles have a second average size smaller than the first average size. The carrier substrate is attached to the support body at the non-working surface. Moreover, a method of manufacturing the grinding tool is described herein.

    Segment-type chemical mechanical polishing conditioner and method for manufacturing thereof
    7.
    发明授权
    Segment-type chemical mechanical polishing conditioner and method for manufacturing thereof 有权
    段式化学机械抛光调理剂及其制造方法

    公开(公告)号:US09067302B2

    公开(公告)日:2015-06-30

    申请号:US14212224

    申请日:2014-03-14

    申请人: Kinik Company

    摘要: The present invention relates to a segment-type chemical mechanical polishing conditioner and a method for manufacturing thereof. The segment-type chemical mechanical polishing conditioner comprises: a bottom substrate having a center protrusion; an abrasive unit binding layer disposed on the outside of the surface of the bottom substrate; and a plurality of abrasive units placed on the abrasive unit binding layer; wherein the abrasive units have a fan-shaped contour and are arrange along the center protrusion of the bottom substrate to form a discontinuous circular contour. Therefore, the present invention can utilize the center protrusion of the bottom substrate to adjust the arrangements of the abrasive units, and effectively improve the problem of thermal deformation of the surface of the chemical mechanical polishing conditioner during heat-hardening process, thereby enhancing the surface flatness of chemical mechanical polishing conditioner.

    摘要翻译: 本发明涉及一种段式化学机械抛光调理剂及其制造方法。 该段式化学机械抛光调理器包括:具有中心突出部的底部基板; 设置在底部基板的表面的外侧的研磨单元结合层; 以及放置在所述研磨单元结合层上的多个研磨单元; 其中所述研磨单元具有扇形轮廓并且沿着所述底部基板的中心突起布置以形成不连续的圆形轮廓。 因此,本发明可以利用底部基板的中心突起来调整研磨单元的布置,并且有效地改善了加热硬化过程中化学机械抛光调理剂的表面的热变形的问题,从而增强了表面 化学机械抛光调理剂的平整度。

    HYBRIDIZED CMP CONDITIONER
    8.
    发明申请

    公开(公告)号:US20170113321A1

    公开(公告)日:2017-04-27

    申请号:US15238177

    申请日:2016-08-16

    IPC分类号: B24B53/017 B24B53/12

    CPC分类号: B24B53/017 B24B53/12

    摘要: A hybridized CMP conditioner includes a base, a first abrasive unit and a plurality of second abrasive units. The first abrasive unit includes a first bonding layer, a substrate for abrasive unit provided on the first bonding layer and an abrasive layer provided on the substrate for abrasive unit. The abrasive layer is a diamond coating. The diamond coating is provided on the surface thereof with a plurality of abrasive tips. Each second abrasive unit includes a second bonding layer, a carrying post provided on the second bonding layer, an abrasive particle provided on the carrying post and an abrasive material-bonding layer provided between the carrying post and the abrasive particle. The CMP conditioner is provided with both excellent cutting force and flattening capability through the first abrasive unit provided with the abrasive layer and the second abrasive units provided with the abrasive particles.

    Chemical Mechanical Polishing Conditioner
    9.
    发明申请
    Chemical Mechanical Polishing Conditioner 审中-公开
    化学机械抛光调理剂

    公开(公告)号:US20160346901A1

    公开(公告)日:2016-12-01

    申请号:US15152617

    申请日:2016-05-12

    申请人: KINIK COMPANY

    IPC分类号: B24B53/017 B24D18/00

    CPC分类号: B24B53/017 B24D18/0027

    摘要: Provided is a chemical mechanical polishing (CMP) conditioner comprising: a substrate comprising a horizontal top surface and multiple abrasive units mounted on the horizontal top surface. Each abrasive unit comprises a base of the abrasive unit, an abrasive layer, and a binding layer. The base of the abrasive unit comprises an upper surface and a lower surface. The abrasive layer is formed on the upper surface and comprises multiple abrasive tips. The binding layer is formed between the lower surface and the substrate, and an inclined plane is formed towards the lower surface. The present invention further provides a method for manufacturing the CMP conditioner. The polishing capabilities of different regions of CMP conditioner can be regulated by the abrasive units. Then the CMP conditioner of the present invention satisfies the requirements in the current industry about different polishing capabilities.

    摘要翻译: 提供了一种化学机械抛光(CMP)调理剂,其包括:基材,其包括水平顶表面和安装在水平顶表面上的多个研磨单元。 每个研磨单元包括研磨单元的底座,磨料层和粘结层。 研磨单元的基部包括上表面和下表面。 研磨层形成在上表面上并且包括多个研磨尖端。 粘合层形成在下表面和基底之间,并且向下表面形成倾斜平面。 本发明还提供一种制造CMP调理剂的方法。 CMP调理器不同区域的抛光能力可由磨料单元调节。 然后,本发明的CMP调理剂满足当前工业中关于不同抛光能力的要求。

    CHEMICAL MECHANICAL POLISHING CONDITIONER
    10.
    发明申请
    CHEMICAL MECHANICAL POLISHING CONDITIONER 有权
    化学机械抛光调理器

    公开(公告)号:US20160236320A1

    公开(公告)日:2016-08-18

    申请号:US15015670

    申请日:2016-02-04

    申请人: Kinik Company

    IPC分类号: B24B53/017

    CPC分类号: B24B53/017

    摘要: Provided is a CMP conditioner comprising: a substrate, multiple abrasive bars, and multiple slide blocks. The substrate is divided into a central surface and an outer surface. The central surface is a recessed part. The outer surface encompasses the central surface. Multiple mounting holes are recessed from the outer surface. The abrasive bars are each respectively mounted in the mounting holes. Each of the multiple abrasive bars comprises a bar body and an abrasive particle. The abrasive particle is mounted on a top surface of the abrasive bar. The multiple slide blocks are distributed among the mounting holes of the outer surface. Each of the multiple slide blocks comprises a slide dressing surface. The present invention utilizes the slide blocks to reduce the contact between the substrate and a polishing mat efficiently. The slide blocks may decrease dissolving out of metal components within the substrate and the pollution induced.

    摘要翻译: 提供了一种CMP调节器,其包括:基板,多个研磨条和多个滑块。 基板被分成中心表面和外表面。 中心表面是凹陷部分。 外表面包围中心表面。 多个安装孔从外表面凹入。 研磨棒分别安装在安装孔中。 多个研磨棒中的每一个包括棒体和磨料颗粒。 研磨颗粒安装在研磨棒的顶表面上。 多个滑块分布在外表面的安装孔之间。 多个滑块中的每一个包括滑动修整表面。 本发明利用滑动块来有效地减少基板和抛光垫之间的接触。 滑块可能会减少基体内金属成分的溶解和引起的污染。