公开(公告)号：US20060024501A1

公开(公告)日：2006-02-02

申请号：US11192178

申请日：2005-07-29

申请人： Kenji Masada ,  Takayuki Yoshida ,  Takafumi Amino

发明人： Kenji Masada ,  Takayuki Yoshida ,  Takafumi Amino

IPC分类号： C01G53/00 ,  B32B5/16

CPC分类号： H01F1/061 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2993

摘要： A high-reliability iron nitride-based magnetic powder with markedly improved weatherability with respect to deterioration over time of the magnetic properties in fine particles smaller than 25 nm is formed by adhering one or more of the elements Si and P to the surface of an iron nitride-based magnetic powder constituted primarily of Fe16N2 with an average grain size of 25 nm or less, where the total content of Si and P in the magnetic powder may be 0.1% or greater as an atomic ratio with respect to Fe. In particular, the invention provides an iron nitride-based magnetic powder such that the value ΔHc as defined by Equation (1) below is 5% or less and the value Δσs as defined by Equation (2) below is 20% or less. ΔHc=(Hc0−Hc1)/Hc0100  (1) Δσs=(σs0−σs1)/σs0100  (2) Here, Hc1 and σs1 are the coercivity and saturation magnetization, respectively, of the magnetic powder after being kept for one week at a constant temperature and constant humidity of 60° C. and 90% RH. Hc0 and σs0 are the coercivity and saturation magnetization of the magnetic powder before being kept at constant temperature and constant humidity.

摘要翻译： 通过将一个或多个元素Si和P粘附到铁的表面上，形成相对于小于25nm的细小颗粒中的磁特性随着时间的劣化而具有显着改善的耐候性的高可靠性的氮化铁基磁性粉末 主要由平均粒径为25nm以下的平均粒径为25nm以下的氮化物系磁性粉末构成，其中磁性粉末中Si和P的总含量可以 相对于Fe为原子比为0.1％以上。 特别地，本发明提供了一种基于氮化铁的磁性粉末，使得如下面等式（1）所定义的值ΔH3 C 5％或更小，并且值Deltasigma >如下式（2）所定义，为20％以下。 <？in-line-formula description =“In-line Formulas”end =“lead”？> DeltaH =（H c0 < （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In 线公式“end =”lead“？> Deltasigma =（sigma sigma＆lt; s1＆gt;）sigma＆ SUB> 100（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>这里，H＆gt; c1＆sigma＆sigma＆lt; s1＆lt; 分别在60℃，90％RH的恒温恒湿下保持1周后的磁性粉末的矫顽力和饱和磁化强度。 在保持在恒定温度和恒定湿度之前，磁粉的矫顽力和饱和磁化强度是高斯和高斯。

公开(公告)号：US07371458B2

公开(公告)日：2008-05-13

申请号：US11192178

申请日：2005-07-29

申请人： Kenji Masada ,  Takayuki Yoshida ,  Takafumi Amino

发明人： Kenji Masada ,  Takayuki Yoshida ,  Takafumi Amino

IPC分类号： B32B5/16 ,  B05D3/02

CPC分类号： H01F1/061 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2993

摘要： A high-reliability iron nitride-based magnetic powder with markedly improved weatherability with respect to deterioration over time of the magnetic properties in fine particles smaller than 25 nm is formed by adhering one or more of the elements Si and P to the surface of an iron nitride-based magnetic powder constituted primarily of Fe16N2 with an average grain size of 25 nm or less, where the total content of Si and P in the magnetic powder may be 0.1% or greater as an atomic ratio with respect to Fe. In particular, the invention provides an iron nitride-based magnetic powder such that the value ΔHc as defined by Equation (1) below is 5% or less and the value Δσs as defined by Equation (2) below is 20% or less. ΔHc=(Hc0−Hc1)/Hc0100  (1) Δσs=(σs0−σs1)/σs0100  (2) Here, Hc1 and σs1 are the coercivity and saturation magnetization, respectively, of the magnetic powder after being kept for one week at a constant temperature and constant humidity of 60° C. and 90% RH. Hc0 and σs0 are the coercivity and saturation magnetization of the magnetic powder before being kept at constant temperature and constant humidity.

摘要翻译： 通过将一个或多个元素Si和P粘附到铁的表面上，形成相对于小于25nm的细小颗粒中的磁特性随着时间的劣化而具有显着改善的耐候性的高可靠性的氮化铁基磁性粉末 主要由平均粒径为25nm以下的平均粒径为25nm以下的氮化物系磁性粉末构成，其中磁性粉末中Si和P的总含量可以 相对于Fe为原子比为0.1％以上。 特别地，本发明提供了一种基于氮化铁的磁性粉末，使得如下面等式（1）所定义的值ΔH3 C 5％或更小，并且值Deltasigma >如下式（2）所定义，为20％以下。 <？in-line-formula description =“In-line Formulas”end =“lead”？> DeltaH =（H c0 < （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In 线公式“end =”lead“？> Deltasigma =（sigma sigma＆lt; s1＆gt;）sigma＆ SUB> 100（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>这里，H＆gt; c1＆sigma＆sigma＆lt; s1＆lt; 分别在60℃，90％RH的恒温恒湿下保持1周后的磁性粉末的矫顽力和饱和磁化强度。 在保持在恒定温度和恒定湿度之前，磁粉的矫顽力和饱和磁化强度是高斯和高斯。

公开(公告)号：US08835443B2

公开(公告)日：2014-09-16

申请号：US12626443

申请日：2009-11-25

申请人： Hisashi Kawasaki ,  Hiroyuki Abe ,  Kazuhide Hayakawa ,  Tetsuya Iida ,  Shinichi Kikuchi ,  Takayuki Yamaguchi ,  Toyomichi Nanayama ,  Hironori Kurachi ,  Masahiro Tamaru ,  Yoshikazu Hori ,  Mitsuru Takahashi ,  Takayuki Yoshida ,  Toshiyuki Sakai

发明人： Hisashi Kawasaki ,  Hiroyuki Abe ,  Kazuhide Hayakawa ,  Tetsuya Iida ,  Shinichi Kikuchi ,  Takayuki Yamaguchi ,  Toyomichi Nanayama ,  Hironori Kurachi ,  Masahiro Tamaru ,  Yoshikazu Hori ,  Mitsuru Takahashi ,  Takayuki Yoshida ,  Toshiyuki Sakai

IPC分类号： A61K31/519 ,  C07D239/545 ,  C07D471/04 ,  C07D487/04

CPC分类号： C07D471/04 ,  A61K31/519 ,  C07C275/30 ,  C07C275/50 ,  C07C2601/16 ,  C07D239/545 ,  C07D239/553 ,  C07D239/62 ,  C07D471/16 ,  C07D487/04 ,  C07F9/53

摘要： The present invention relates to a pyrimidine compound or a pharmaceutically acceptable salt thereof represented by the following formula [I] wherein each symbol is as defined in the specification and a method of therapeutically or prophylactically treating an undesirable cell proliferation, comprising administering such a compound. The compound of the present invention has superior activity in suppressing undesirable cell proliferation, particularly, an antitumor activity, and is useful as an antitumor agent for the prophylaxis or treatment of cancer, rheumatism, and the like. In addition, the compound of the present invention can be a more effective antitumor agent when used in combination with other antitumor agents such as an alkylating agent or metabolism antagonist.

摘要翻译： 本发明涉及由下式[I]表示的嘧啶化合物或其药学上可接受的盐，其中每个符号如说明书中所定义，以及治疗或预防性治疗不期望的细胞增殖的方法，包括施用这种化合物。 本发明的化合物在抑制不期望的细胞增殖，特别是抗肿瘤活性方面具有优异的活性，可用作预防或治疗癌症，风湿病等的抗肿瘤剂。 此外，当与其它抗肿瘤剂如烷化剂或代谢拮抗剂组合使用时，本发明的化合物可以是更有效的抗肿瘤剂。

公开(公告)号：US08330188B2

公开(公告)日：2012-12-11

申请号：US13067721

申请日：2011-06-22

申请人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

发明人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

IPC分类号： H01L27/10 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/823807 ,  H01L21/823871 ,  H01L24/10 ,  H01L29/7842 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A semiconductor device 20 formed on a semiconductor chip substrate 30 has a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor 36, the circuit blocks being covered on top with a protective film 41 to protect the circuits. A plurality of bumps 23a, 23b, 23c are formed, at least via the protective film 41, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumps 23a, 23b, 23c impose stresses on the MOS transistors 36, increasing the mobility of the MOS transistors 36 and thereby improving the performance of the semiconductor device 20.

摘要翻译： 形成在半导体芯片基板30上的半导体装置20具有由至少包含金属氧化物半导体（MOS）晶体管36的电路构成的多个电路块，电路块由保护膜41覆盖在顶部，以保护 电路。 至少通过保护膜41仅形成多个凸起23a，23b，23c，其电流承载能力和阈值电压不满足预定值并且需要性能提高的电路块。 凸起23a，23b，23c在MOS晶体管36上施加应力，增加MOS晶体管36的迁移率，从而提高半导体器件20的性能。

公开(公告)号：US07985988B2

公开(公告)日：2011-07-26

申请号：US11898305

申请日：2007-09-11

申请人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

发明人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

IPC分类号： H01L27/10 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/823807 ,  H01L21/823871 ,  H01L24/10 ,  H01L29/7842 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A semiconductor device 20 formed on a semiconductor chip substrate 30 has a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor 36, the circuit blocks being covered on top with a protective film 41 to protect the circuits. A plurality of bumps 23a, 23b, 23c are formed, at least via the protective film 41, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumps 23a, 23b, 23c impose stresses on the MOS transistors 36, increasing the mobility of the MOS transistors 36 and thereby improving the performance of the semiconductor device 20.

摘要翻译： 形成在半导体芯片基板30上的半导体装置20具有由至少包含金属氧化物半导体（MOS）晶体管36的电路构成的多个电路块，电路块由保护膜41覆盖在顶部，以保护 电路。 至少通过保护膜41仅形成多个凸起23a，23b，23c，其电流承载能力和阈值电压不满足预定值并且需要性能提高的电路块。 凸起23a，23b，23c在MOS晶体管36上施加应力，增加MOS晶体管36的迁移率，从而提高半导体器件20的性能。

公开(公告)号：US20090294960A1

公开(公告)日：2009-12-03

申请号：US12368763

申请日：2009-02-10

申请人： Takayuki Yoshida

发明人： Takayuki Yoshida

IPC分类号： H01L23/485 ,  H01L23/48

CPC分类号： H01L24/73 ,  H01L23/49816 ,  H01L23/50 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L2223/6611 ,  H01L2224/05554 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor device, including: a substrate having an upper face on which a first ground pad, a first power supply pad, a first signal pad, and a second signal pad are formed; a first substrate formed on the substrate and having an upper face on which a third signal pad connected to the first signal pad and a first circuit are formed; and a semiconductor element including a second substrate having a reverse face on which a bump electrode connected to the first circuit and a second circuit are formed and an upper face on which a fourth signal pad connected to the second signal pad is formed, with a signal through via connected to the second circuit and the fourth signal pad being buried in the second substrate.

摘要翻译： 一种半导体器件，包括：具有上表面的衬底，其上形成有第一接地焊盘，第一电源焊盘，第一信号焊盘和第二信号焊盘; 形成在所述基板上并具有上表面的第一基板，形成有连接到所述第一信号焊盘的第三信号焊盘和第一电路; 以及半导体元件，包括具有反面的第二基板，其上形成有连接到第一电路的凸起电极和第二电路，以及形成有与第二信号焊盘连接的第四信号焊盘的上表面，具有信号 通孔连接到第二电路，第四信号焊盘被埋在第二衬底中。

公开(公告)号：US20090206463A1

公开(公告)日：2009-08-20

申请号：US12343936

申请日：2008-12-24

申请人： Takayuki Yoshida

发明人： Takayuki Yoshida

IPC分类号： H01L23/28 ,  H01L21/56 ,  H05K1/11

CPC分类号： H05K3/284 ,  H01L21/565 ,  H01L23/3128 ,  H01L25/105 ,  H01L2224/48227 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/15331 ,  H05K1/117 ,  H05K2203/095 ,  H05K2203/1316

摘要： A semiconductor device includes a substrate 2, a semiconductor element 3, a molding resin portion 4, and a plurality of connection terminals 5 arranged on a surface of the substrate around the outer periphery of the molding resin portion 4. In a region B corresponding to a resin passage used to form the molding resin portion 4, a plurality of metal planes 18 and 19 as resin peel-off portions exhibiting a low adhesive strength to the molding resin are arranged in a direction along the resin passage at appropriate intervals. At least one connection terminal 5 is located between the metal planes 18 and 19.

摘要翻译： 半导体器件包括基板2，半导体元件3，模制树脂部分4和布置在模制树脂部分4的外周周围的基板的表面上的多个连接端子5.在对应于 用于形成模制树脂部分4的树脂通道，作为树脂剥离部分的多个金属平面18和19被布置在沿着树脂通道的适当间隔的方向上。 至少一个连接端子5位于金属平面18和19之间。

公开(公告)号：US07497079B2

公开(公告)日：2009-03-03

申请号：US11564389

申请日：2006-11-29

申请人： Takayuki Yoshida ,  Fuyuki Ito

发明人： Takayuki Yoshida ,  Fuyuki Ito

IPC分类号： F01N7/10

CPC分类号： F01N13/10

摘要： An exhaust manifold is provided with a plurality of branch pipe parts and a collecting pipe part. The plurality of branch pipe parts are respectively connected to a plurality of exhaust ports of a multicylinder internal combustion engine. The collecting pipe part is formed by merging the plurality of branch pipe parts. The plurality of branch pipe parts and the collecting pipe part are formed by an upper shell member and a lower shell member superposed on each other. A partition plate is attached to at least one of the upper shell member and the lower shell member. The partition plate separates between exhaust gases flowing into the collecting pipe part from two of the branch pipe parts respectively connected to adjacent two of the plurality of exhaust ports.

摘要翻译： 排气歧管设有多个支管部分和收集管部分。 多个支管部分分别连接到多缸内燃机的多个排气口。 收集管部通过使多个支管部分合并而形成。 多个分支管部和收集管部由彼此重叠的上壳部件和下壳部件形成。 分隔板附接到上壳体构件和下壳体构件中的至少一个。 分隔板从分别连接到多个排气口中的相邻两个排气口的两个分支管部分分离流入收集管部分的废气。

公开(公告)号：US06483175B2

公开(公告)日：2002-11-19

申请号：US09953270

申请日：2001-09-17

申请人： Takayuki Yoshida

发明人： Takayuki Yoshida

IPC分类号： H01L2362

CPC分类号： H01L24/81 ,  H01L2224/1134 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15173 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/0401

摘要： A wiring board according to the present invention has a substrate, a plurality of lines provided on the substrate, an interference-preventive conductor layer provided between the lines to have open ends and prevent signal interference between the lines, and a via electrically connected to the interference-preventive conductor layer. The via is provided at a point at which a distance from each of the open ends of the interference-preventive conductor layer is less than one quarter of a wavelength corresponding to a maximum frequency component of harmonic components contained in the signal.

摘要翻译： 根据本发明的布线板具有基板，设置在基板上的多条线，设置在线之间的具有开口端并防止线之间的信号干扰的抗干扰导体层，以及电连接到 抗干扰导体层。 通孔设置在距离抗干扰导体层的每个开口端的距离小于对应于包含在信号中的谐波分量的最大频率分量的波长的四分之一处。

公开(公告)号：US06417885B1

公开(公告)日：2002-07-09

申请号：US08697679

申请日：1996-08-28

申请人： Takahisa Suzuki ,  Takayuki Yoshida

发明人： Takahisa Suzuki ,  Takayuki Yoshida

IPC分类号： H04N5225

CPC分类号： H04N5/2251 ,  H04N5/2253 ,  H04N2005/2255 ,  H05K1/117 ,  H05K3/0097 ,  H05K3/36 ,  H05K2201/042 ,  H05K2201/10151 ,  H05K2203/049

摘要： An image pickup section incorporates a solid-state image pickup element chip. Electronic parts for driving or controlling the image pickup section are mounted on a circuit board. First and second electrode pad groups are formed on the circuit board, and a separation band is also formed on the circuit board between the first and second electrode pad groups. The circuit board is used as it is when the image pickup device is not required to be bendable. When the image pickup device is required to be bendable, the circuit board is separated by cutting it at the separation band and the first and second electrode pad groups that are now respectively located on the separated pieces of the circuit board are connected to each other by signal lines.

摘要翻译： 图像拾取部分包括固态图像拾取元件芯片。 用于驱动或控制图像拾取部分的电子部件安装在电路板上。 第一和第二电极焊盘组形成在电路板上，并且在第一和第二电极焊盘组之间的电路板上也形成分离带。 当图像拾取装置不需要弯曲时，电路板被原样使用。 当图像拾取装置需要弯曲时，通过在分离带处切割电路板来分离电路板，并且现在分别位于电路板的分离片上的第一和第二电极焊盘组彼此连接， 信号线。