公开(公告)号：US5500761A

公开(公告)日：1996-03-19

申请号：US187676

申请日：1994-01-27

申请人： Keith W. Goossen ,  James A. Walker

发明人： Keith W. Goossen ,  James A. Walker

IPC分类号： G02B26/00 ,  G02B26/02

CPC分类号： G02B26/02 ,  G02B26/001

摘要： A method and apparatus for modulating an optical signal using a micromechanical modulator are disclosed. The modulator comprises a membrane, which consists of at least one layer, and a substrate, spaced to form an air gap. The layers of the membrane are characterized in that there is a relationship between the refractive indices of the layers and the refractive index of the substrate. The membrane is suspended in a first position over the substrate by a flexible support arrangement. Bias is applied to the membrane and the substrate to create an electrostatic force to move the membrane towards the substrate to a second position. The reflectivity of the device to an optical signal changes as the membrane moves from the first position to the second position, thereby modulating the signal.

摘要翻译： 公开了一种使用微机械调制器调制光信号的方法和装置。 该调制器包括由至少一层组成的膜和间隔开形成气隙的衬底。 膜的层的特征在于，层的折射率和基板的折射率之间存在关系。 膜通过柔性支撑装置悬挂在衬底上的第一位置。 将偏压施加到膜和基底以产生静电力，以将膜朝向衬底移动到第二位置。 当膜从第一位置移动到第二位置时，器件对光学信号的反射率改变，从而调制信号。

公开(公告)号：US5468689A

公开(公告)日：1995-11-21

申请号：US153719

申请日：1993-11-16

申请人： John E. Cunningham ,  Keith W. Goossen ,  William Y. Jan ,  James A. Walker

发明人： John E. Cunningham ,  Keith W. Goossen ,  William Y. Jan ,  James A. Walker

IPC分类号： C23C16/50 ,  H01L21/203 ,  H01L21/205 ,  H01L21/318 ,  H01L21/02 ,  H01L21/20

CPC分类号： H01L21/3185 ,  Y10S438/933

摘要： A technique is described for the preparation of a thin film of a silicon nitride diffusion barrier to gallium on a silicon integrated circuit chip. The technique involves reacting nitrogen and silane in a ratio of 53:1 to 300:1 in a plasma enhanced chemical vapor deposition apparatus. The described technique is of interest for use in the monolithic integration of interconnected GaAs/AlGaAs double heterostructures, modulators and silicon MOSFET structures.

摘要翻译： 描述了一种用于在硅集成电路芯片上制备氮化硅扩散阻挡层至镓的薄膜的技术。 该技术涉及在等离子体增强化学气相沉积装置中使氮和硅烷以53:1至300:1的比例反应。 所描述的技术对于用于互连的GaAs / AlGaAs双异质结构，调制器和硅MOSFET结构的单片集成是有意义的。

公开(公告)号：US5443685A

公开(公告)日：1995-08-22

申请号：US146511

申请日：1993-11-01

申请人： Keith W. Goossen ,  James A. Walker

发明人： Keith W. Goossen ,  James A. Walker

IPC分类号： C23C14/34 ,  H01L21/027 ,  H01L21/20 ,  H01L21/308 ,  H01L21/336 ,  H01L21/365 ,  H01L29/78 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/3085 ,  H01L21/0274 ,  H01L21/3083 ,  Y10S438/933

摘要： Nonpolar substrates comprising off-axis growth regions for the growth of polar semiconductors, and a method for making such substrates, are disclosed. According to the invention, an erodible material, such as a photoresist, is applied to a substrate at a site and is exposed to radiation at that site which has an linear variation in energy at the surface of the erodible material. Due to this variation in exposure energy, a taper results in the erodible material after development. The tapered region is then etched in a manner which etches both the erodible layer and the underlying substrate. The taper in the erodible layer provides a varying attenuation during the etching process such that the taper of the erodible layer is transferred to the substrate.

摘要翻译： 公开了包含用于极性半导体的生长的离轴生长区域的非极性底物及其制造方法。 根据本发明，一种可蚀刻的材料，例如光致抗蚀剂，被施加到一个位置处的基底上，并且暴露在该可剥蚀材料表面处的能量线性变化的位置。 由于暴露能量的这种变化，锥形导致显影后的可侵蚀材料。 然后以蚀刻两个可侵蚀层和下面的衬底的方式蚀刻该锥形区域。 可侵蚀层中的锥度在蚀刻工艺期间提供变化的衰减，使得可侵蚀层的锥度被转移到衬底。

公开(公告)号：US5013685A

公开(公告)日：1991-05-07

申请号：US430558

申请日：1989-11-02

申请人： Tien-Heng Chiu ,  John E. Cunningham ,  Keith W. Goossen

发明人： Tien-Heng Chiu ,  John E. Cunningham ,  Keith W. Goossen

IPC分类号： H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L29/36 ,  H01L29/43 ,  H01L29/45

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L29/365

摘要： This invention concerns with a non-alloyed ohmic contact to III-V semiconductor material in a III-V semiconductor device on a Si base. The ohmic contact includes at least one set of layers comprising a delta-doped monolayer and a thin layer of undoped III-V semiconductor material which is 2.5 nm or less in thickness, said at least one set of layers being upon a doped III-V semiconductor layer. An epitaxial layer of metal upon an uppermost of the layers of the said set of layers completes the ohmic contact, said metal being capable of wetting the surface of the III-V semiconductor material and of being epitaxially grown on the said III-V semiconductor material. At least the said at least one set of layers and the metal layer are deposited by Molecular Beam Epitaxy, thus avoiding formation of oxides and growing the metal epitaxially so that the metal layer is crystalline at least near the interface between the metal and the semiconductor material. The epitaxial deposition of the metal is conducted at a relatively low temperature of the semiconductor material. In an illustrative embodiment the metal is Al capable of being epitaxially deposited at a temperature within a range of from 10.degree. C. to 100.degree. C., preferably to a temperature ranging from 20.degree. C. to 50.degree. C., with 25.degree. C. being most preferable. The resultant contacts exhibit specific resistance which is lower and higher current passing capabilities which are higher than those of prior art non-alloyed ohmic contacts. However, the most noteworthy advantage of using Al in an integrated opto-electronic circuit comprising a III-V semiconductor device on a Si base, is the avoidance of "purple plague". The "purple plague" may arise when gold-based contacts in III-V semiconductor devices and Al-based contacts in Si-devices being used in an integrated circuit come in contact, especially at higher, e.g. 300.degree. C., temperatures.

公开(公告)号：US06388322B1

公开(公告)日：2002-05-14

申请号：US09764192

申请日：2001-01-17

申请人： Keith W. Goossen ,  William Y. Jan

发明人： Keith W. Goossen ,  William Y. Jan

IPC分类号： H01L21302

CPC分类号： H01L24/13 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/81 ,  H01L27/1469 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/1147 ,  H01L2224/13011 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/351 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/02272 ,  H01S5/18341 ,  H01S5/423 ,  Y10T29/49204 ,  Y10T29/49224 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05671

摘要： Mechanically compliant bumps for flip-chip bonding have a base that is deposited, for example, on the contact pad of a semiconductor chip. A thin wall depends from the periphery of the upper surface of base. The wall advantageously completely encircles the upper surface of the mechanically compliant bump. The wall, which is capable of flexing or deforming under pressure provides mechanical compliance. The wall is able to flex or deform under pressure even if the bump is formed from high-temperature metal. These mechanically compliant bumps facilitate sound electrical connections even when an electronics device is brought into contact for bonding out of parallel.

摘要翻译： 用于倒装芯片接合的机械兼容凸块具有例如沉积在半导体芯片的接触焊盘上的基极。 薄壁从底部的上表面的周边取决于。 壁有利地完全环绕机械柔性凸起的上表面。 能够在压力下弯曲或变形的壁提供机械顺应性。 即使凸起由高温金属形成，壁也能够在压力下弯曲或变形。 即使当电子设备被接触以进行并联接合时，这些机械兼容的凸起也促进声音电连接。

公开(公告)号：US06307983B1

公开(公告)日：2001-10-23

申请号：US09495303

申请日：2000-02-01

申请人： Keith W. Goossen

发明人： Keith W. Goossen

IPC分类号： G02B626

CPC分类号： G02B6/3556 ,  G02B6/3504 ,  G02B6/356 ,  G02B6/3897 ,  H04Q11/0005 ,  H04Q2011/0015 ,  H04Q2011/0024 ,  H04Q2011/0043

摘要： A robotic optical cross-connect to operate with three motors irrespective of the number of input fibers. A preferred embodiment includes a ferrule loader arm operated by a first motor; a ferrule loader ring rotatably operated by a second motor; and a loading piston upon which the ferrule loader-ring is mounted. The first motor imparts a motion to the ferrule loader arm in a first direction. The loading piston imparts a motion to the ferrule loader ring in a second direction, the second direction being substantially orthogonal to the first direction. A plurality of connectorized patch fibers is connected at a first end (leaving a second end free) to a first fiber bundle arranged in a substantially circular fashion. A second fiber bundle is also arranged in a substantially circular fashion and is configured to receive connections from the free second end of the plurality of patch fibers. Ferrules are loaded from the ferrule loader arm onto the ferrule loader ring. By operating the second motor, the ferrule loader ring is rotated to an appropriate (arbitrary, prescribed) position within contact or within a free-space coupling region. Thereafter a connection between the fibers from the first fiber bundle and the second fiber bundle is established.

摘要翻译： 机器人光学交叉连接，与三个电机一起操作，而不考虑输入光纤的数量。 优选实施例包括由第一电动机操作的套圈装载臂; 由第二电动机可旋转地操作的套圈加载器环; 以及安装套圈加载环的装载活塞。 第一马达在第一方向上向套圈装载臂施加运动。 装载活塞在第二方向上向套圈装载环施加运动，第二方向基本上与第一方向正交。 多个连接的贴片纤维在第一端（留下第二端自由）连接到以基本圆形方式布置的第一纤维束。 第二纤维束也以大致圆形的方式布置，并且被配置为从多个贴片纤维的自由的第二端接收连接。 套圈从套圈装载臂装载到套圈装载机环上。 通过操作第二电动机，套圈装载机环旋转到接触内或自由空间耦合区域内的适当（任意的，规定的）位置。 此后，建立了来自第一纤维束和第二纤维束的纤维之间的连接。

公开(公告)号：US5636052A

公开(公告)日：1997-06-03

申请号：US283106

申请日：1994-07-29

申请人： Susanne C. Arney ,  Keith W. Goossen ,  James A. Walker

发明人： Susanne C. Arney ,  Keith W. Goossen ,  James A. Walker

IPC分类号： G02B26/08 ,  G02B26/02 ,  G09F9/37 ,  G09G3/20 ,  G09G3/34 ,  H04N5/74 ,  G02B26/00

CPC分类号： G09G3/3466 ,  G02B26/02 ,  G09F9/372 ,  G09G2300/08

摘要： A direct-view display comprising an array of micro-mechanical modulators is disclosed, he modulator used to form the display comprises a suspended, vertically moving membrane and a substrate. The device functions based on optical interference effects between the membrane and the substrate which cause the modulator to either substantially reflect or absorb an optical signal. The interference effects are a function of the size of the air gap between the membrane and substrate, which varies as the membrane moves. The membrane moves in response to a data signal, representative of an image, delivered to the modulator. The display generates an image based on the pattern of light and dark sections of the display corresponding to the reflectivity of each modulator at a given point in time.

摘要翻译： 公开了一种包括微机械调制器阵列的直视显示器，用于形成显示器的调制器包括悬浮的，垂直移动的膜和基底。 该装置基于膜和基板之间的光学干涉效应而起作用，这导致调制器基本上反射或吸收光信号。 干扰效应是膜和基底之间的空气间隙的大小的函数，膜随着膜的移动而变化。 膜响应于传送到调制器的表示图像的数据信号而移动。 显示器基于在给定时间点处与每个调制器的反射率相对应的显示器的亮和暗部分的图案来生成图像。

公开(公告)号：US5631472A

公开(公告)日：1997-05-20

申请号：US473679

申请日：1995-06-07

申请人： John E. Cunningham ,  Keith W. Goossen ,  Rajiv N. Pathak

发明人： John E. Cunningham ,  Keith W. Goossen ,  Rajiv N. Pathak

IPC分类号： G02F1/015 ,  G02B6/12 ,  G02F1/017 ,  H01L21/20 ,  H01L21/203 ,  H01S3/10 ,  H01L29/205 ,  H01L31/0304 ,  H01L31/105

CPC分类号： G02F1/017 ,  B82Y20/00 ,  G02B2006/12142 ,  G02F2001/01766 ,  G02F2202/102 ,  G02F2203/02 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  Y10S438/938

摘要： An in-situ method is disclosed for highly accurate lattice matching using reflection high energy electron diffraction dynamics. The method includes the steps of providing a substrate of a first semiconductor material and initiating growth of a second semiconductor material thereon. The oscillation amplitude of intensity I of waveform cycles is monitored using reflection high energy electron diffraction. A maximum intensity I.sup.+ and a minimum intensity I.sup.- is determined over a predetermined number of waveform cycles. The intensity drop .DELTA.I from initial reflectivity to minimum reflectivity of the waveform cycles is determined and normalized figure of merit FM is calculated for the predetermined number of waveform cycles using the relationship: ##EQU1## The fluxes of the second semiconductor material are then adjusted to maximize FM and optimize matching. A multiple quantum well light modulator is also provided including a semiconductor substrate of InP, a multiple quantum well region, disposed above the InP substrate, composed of InGaAs and having a thickness of about 4 .mu.m. The modulator is characterized by a lattice mismatch of less than 2.times.10.sup.4.

摘要翻译： 公开了一种使用反射高能电子衍射动力学进行高精度晶格匹配的现场方法。 该方法包括以下步骤：提供第一半导体材料的衬底并且在其上起始第二半导体材料的生长。 使用反射高能电子衍射监测波形周期的强度I的振荡幅度。 在预定数量的波形周期内确定最大强度I +和最小强度I。 确定从初始反射率到波形周期的最小反射率的强度降DELTA I，并且使用以下关系计算预定数量的波形周期的归一化品质因数FM：然后将第二半导体材料的通量调整为 最大化FM并优化匹配。 还提供了一种多量子阱光调制器，其包括设置在InP衬底上方的InGaAs并具有约4μm厚度的InP的多个量子阱区的InP半导体衬底。 调制器的特征在于小于2×104的晶格失配。

公开(公告)号：US5510277A

公开(公告)日：1996-04-23

申请号：US268137

申请日：1994-06-29

申请人： John E. Cunningham ,  Keith W. Goossen ,  William Y. Jan ,  James A. Walker

发明人： John E. Cunningham ,  Keith W. Goossen ,  William Y. Jan ,  James A. Walker

IPC分类号： H01L21/302 ,  H01L21/203 ,  H01L21/265 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L21/02046 ,  Y10S438/974

摘要： A method for desorbing the surface oxide on a silicon substrate is performed by implanting particles such at atomic or ionic hydrogen into the oxide layer on the silicon substrate. The oxide is then removed by breaking the bonds between the silicon and oxygen atoms within the oxide. The bonds may be broken by heating the substrate, for example. The temperature to which the substrate must be raised is substantially less than the temperature required to desorb an oxide layer that has not undergone an implantation step. In one particular example, the particles implanted into the oxide surface are hydrogen ions generated by electron cyclotron resonance.

摘要翻译： 在硅衬底上解吸表面氧化物的方法是通过将诸如原子或离子氢的颗粒注入硅衬底上的氧化物层来进行的。 然后通过破坏氧化物内的硅和氧原子之间的键来去除氧化物。 例如，可以通过加热衬底来破坏键合。 必须升高衬底的温度基本上小于解吸未经植入步骤的氧化物层所需的温度。 在一个具体实例中，注入氧化物表面的颗粒是通过电子回旋共振产生的氢离子。

公开(公告)号：US06424450B1

公开(公告)日：2002-07-23

申请号：US09726179

申请日：2000-11-29

申请人： Keith W. Goossen

发明人： Keith W. Goossen

IPC分类号： G02B2600

CPC分类号： G02B26/0841

摘要： A modulator that provides low insertion loss and wide bandwidth. The modulator has a single layer, quarter wave membrane that is suspended over a substrate. The membrane has a refractive index, nm, in a range of about 1.1ns0.5≦nm≦1.4ns0.5. When actuated, the membrane moves toward the substrate, altering the reflectivity of the modulator. In some embodiments, the substrate is germanium, which has a protective layer disposed thereon to protect it from etchant during MEMS fabrication procedures.

摘要翻译： 提供低插入损耗和宽带宽的调制器。 调制器具有悬浮在衬底上的单层四分之一波长膜。 膜的折射率nm在约1.1ns0.5 <= nm <= 1.4ns0.5的范围内。 当致动时，膜向衬底移动，改变了调制器的反射率。 在一些实施例中，衬底是锗，其具有设置在其上的保护层，以在MEMS制造过程中保护层免受蚀刻剂的影响。