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公开(公告)号：US20150168825A1
公开(公告)日：2015-06-18
申请号：US14571385
申请日：2014-12-16
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Naomi Shida , Kenji Todori , Shigehiko Mori , Reiko Yoshimura , Hiroyuki Kashiwagi , Ikuo Yoneda , Tsukasa Tada
CPC classification number: G03F1/76 , G03F1/38 , G03F1/80 , G03F7/16 , G03F7/20 , G03F7/201 , G03F7/40 , G03F7/7035 , H01L21/3065 , H01L21/3086
Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
Abstract translation: 根据实施例的近场曝光掩模包括：基板; 具有凹凸的凹凸结构，形成在基板的一个面上; 至少布置在每个凸起的尖端部分上的近场光产生膜，所述近场光产生膜是包含选自Au，Al，Ag，Cu，Cr中的至少一种元素的层 ，Sb，W，Ni，In，Ge，Sn，Pb，Zn，Pd和C，或由这些材料中的一些形成的层形成的膜堆叠; 和填充在每个凹部中的树脂。
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公开(公告)号：US09450065B2
公开(公告)日：2016-09-20
申请号：US14495958
申请日：2014-09-25
Applicant: Kabushiki Kaisha Toshiba
Inventor： Shigeki Hattori , Reika Ichihara , Masaya Terai , Hideyuki Nishizawa , Tsukasa Tada , Koji Asakawa , Hiroyuki Fuke , Satoshi Mikoshiba , Yoshiaki Fukuzumi , Hideaki Aochi
IPC: H01L21/338 , H01L29/51 , H01L27/115 , H01L51/05 , H01L21/28 , H01L21/02
CPC classification number: H01L29/513 , H01L21/02118 , H01L21/02227 , H01L21/28282 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L51/0591
Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.
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公开(公告)号：US09588418B2
公开(公告)日：2017-03-07
申请号：US14571385
申请日：2014-12-16
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Naomi Shida , Kenji Todori , Shigehiko Mori , Reiko Yoshimura , Hiroyuki Kashiwagi , Ikuo Yoneda , Tsukasa Tada
CPC classification number: G03F1/76 , G03F1/38 , G03F1/80 , G03F7/16 , G03F7/20 , G03F7/201 , G03F7/40 , G03F7/7035 , H01L21/3065 , H01L21/3086
Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
Abstract translation: 根据实施例的近场曝光掩模包括：基板; 具有凹凸的凹凸结构，形成在基板的一个面上; 至少布置在每个凸起的尖端部分上的近场光产生膜，所述近场光产生膜是包含选自Au，Al，Ag，Cu，Cr中的至少一种元素的层 ，Sb，W，Ni，In，Ge，Sn，Pb，Zn，Pd和C，或由这些材料中的一些形成的层形成的膜堆叠; 和填充在每个凹部中的树脂。
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4.发明授权Near-field exposure mask, resist pattern forming method, device manufacturing method, near-field exposure method, pattern forming method, near-field optical lithography member, and near-field nanoimprint method 有权近场曝光掩模，抗蚀剂图案形成方法，器件制造方法，近场曝光方法，图案形成方法，近场光刻部件和近场纳米压印法公开(公告)号：US09550322B2
公开(公告)日：2017-01-24
申请号：US14683794
申请日：2015-04-10
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Naomi Shida , Kenji Todori , Shigehiko Mori , Ko Yamada , Masakazu Yamagiwa , Reiko Yoshimura , Yasuyuki Hotta , Tsukasa Tada , Hiroyuki Kashiwagi , Ikuo Yoneda
IPC: G03F7/24 , G03F7/20 , G03F1/50 , B29C59/16 , B82Y30/00 , B82Y40/00 , B82Y10/00 , B29D11/00 , G03F7/00 , B29L11/00
CPC classification number: B29C59/16 , B29D11/0074 , B29L2011/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F1/50 , G03F7/0002 , G03F7/70325
Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.
Abstract translation: 根据实施例的近场曝光掩模包括：硅衬底; 以及形成在所述硅基板上的近场光产生单元，所述近场光产生单元是包含选自Au，Al，Ag，Cu，Cr，Sb，W中的至少一种元素的层 ，Ni，In，Ge，Sn，Pb，Zn，Pd和C，或由其中一些材料制成的层形成的膜叠层。
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公开(公告)号：US20150236171A1
公开(公告)日：2015-08-20
申请号：US14703075
申请日：2015-05-04
Applicant: Kabushiki Kaisha Toshiba
Inventor： Hideyuki NISHIZAWA , Shigeki Hattori , Masaya Terai , Satoshi Mikoshiba , Koji Asakawa , Tsukasa Tada
IPC: H01L29/792 , H01L29/423 , H01L29/16 , H01L29/51
CPC classification number: H01L29/792 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C2213/53 , H01L29/16 , H01L29/42348 , H01L29/513 , H01L29/517 , H01L29/518 , H01L51/0077 , H01L51/0092 , H01L51/0098 , H01L51/0591
Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.
Abstract translation: 实施方案的有机分子存储器包括第一导电层，第二导电层和插入在第一导电层和第二导电层之间的有机分子层，有机分子层包括可变电阻分子链或电荷储存分子 链，可变电阻分子链或具有吸电子取代基的电荷储存分子链。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20150044835A1
公开(公告)日：2015-02-12
申请号：US14495958
申请日：2014-09-25
Applicant: Kabushiki Kaisha Toshiba
Inventor： Shigeki Hattori , Reika Ichihara , Masaya Terai , Hideyuki Nishizawa , Tsukasa Tada , Koji Asakawa , Hiroyuki Fuke , Satoshi Mikoshiba , Yoshiaki Fukuzumi , Hideaki Aochi
IPC: H01L27/115 , H01L29/51 , H01L21/02
CPC classification number: H01L29/513 , H01L21/02118 , H01L21/02227 , H01L21/28282 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L51/0591
Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.
Abstract translation: 根据一个实施例，非易失性半导体存储器件包括第一层叠结构体，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜。 第一堆叠结构体包括沿着第一方向堆叠的多个第一电极膜和设置在第一电极膜之间的第一电极间绝缘膜。 第一半导体层与第一电极膜的侧面相对。 第一有机膜设置在第一电极膜和第一半导体层的侧面之间并含有有机化合物。 第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。 设置在第一有机膜和第一电极膜的侧面之间的第一电极侧绝缘膜。
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公开(公告)号：US09548373B2
公开(公告)日：2017-01-17
申请号：US14842312
申请日：2015-09-01
Applicant: Kabushiki Kaisha Toshiba
Inventor： Shigeki Hattori , Tsukasa Tada , Masaya Terai , Hideyuki Nishizawa , Koji Asakawa , Yoshiaki Fukuzumi
CPC classification number: H01L29/518 , G11C11/5664 , G11C16/0483 , H01L27/285 , H01L29/511 , H01L29/517 , H01L51/0091 , H01L51/0591
Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1).
Abstract translation: 根据实施例的非易失性半导体存储器件包括：半导体层; 控制栅电极; 以及设置在半导体层和控制栅电极之间的有机分子层，并且具有包含分子式（1）所示的分子结构的有机分子。
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8.发明申请NEAR-FIELD EXPOSURE MASK, RESIST PATTERN FORMING METHOD, DEVICE MANUFACTURING METHOD, NEAR-FIELD EXPOSURE METHOD, PATTERN FORMING METHOD, NEAR-FIELD OPTICAL LITHOGRAPHY MEMBER, AND NEAR-FIELD NANOIMPRINT METHOD 有权近场曝光掩模，电阻图案形成方法，器件制造方法，近场曝光方法，图案形成方法，近场光学成像方法和近场纳米方法公开(公告)号：US20150246478A1
公开(公告)日：2015-09-03
申请号：US14683794
申请日：2015-04-10
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Naomi Shida , Kenji Todori , Shigehiko Mori , Ko Yamada , Masakazu Yamagiwa , Reiko Yoshimura , Yasuyuki Hotta , Tsukasa Tada , Hiroyuki Kashiwagi , Ikuo Yoneda
CPC classification number: B29C59/16 , B29D11/0074 , B29L2011/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F1/50 , G03F7/0002 , G03F7/70325
Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.
Abstract translation: 根据实施例的近场曝光掩模包括：硅衬底; 以及形成在所述硅基板上的近场光产生单元，所述近场光产生单元是包含选自Au，Al，Ag，Cu，Cr，Sb，W中的至少一种元素的层 ，Ni，In，Ge，Sn，Pb，Zn，Pd和C，或由其中一些材料制成的层形成的膜叠层。
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9.发明授权公开(公告)号：US09000504B2
公开(公告)日：2015-04-07
申请号：US14105565
申请日：2013-12-13
Applicant: Kabushiki Kaisha Toshiba
Inventor： Shigeki Hattori , Reika Ichihara , Masaya Terai , Hideyuki Nishizawa , Tsukasa Tada , Koji Asakawa , Hiroyuki Fuke , Satoshi Mikoshiba , Yoshiaki Fukuzumi , Hideaki Aochi
IPC: H01L27/108 , H01L29/51 , H01L27/115 , H01L51/05 , H01L21/28
CPC classification number: H01L29/513 , H01L21/02118 , H01L21/02227 , H01L21/28282 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L51/0591
Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.
Abstract translation: 根据一个实施例，非易失性半导体存储器件包括第一层叠结构体，第一半导体层，第一有机膜，第一半导体侧绝缘膜和第一电极侧绝缘膜。 第一堆叠结构体包括沿着第一方向堆叠的多个第一电极膜和设置在第一电极膜之间的第一电极间绝缘膜。 第一半导体层与第一电极膜的侧面相对。 第一有机膜设置在第一电极膜和第一半导体层的侧面之间并含有有机化合物。 第一半导体侧绝缘膜设置在第一有机膜和第一半导体层之间。 设置在第一有机膜和第一电极膜的侧面之间的第一电极侧绝缘膜。
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公开(公告)号：US08945798B2
公开(公告)日：2015-02-03
申请号：US13755188
申请日：2013-01-31
Applicant: Kabushiki Kaisha Toshiba
Inventor： Naomi Shida , Kenji Todori , Shigehiko Mori , Reiko Yoshimura , Hiroyuki Kashiwagi , Ikuo Yoneda , Tsukasa Tada
CPC classification number: G03F1/76 , G03F1/38 , G03F1/80 , G03F7/16 , G03F7/20 , G03F7/201 , G03F7/40 , G03F7/7035 , H01L21/3065 , H01L21/3086
Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
Abstract translation: 根据实施例的近场曝光掩模包括：基板; 具有凹凸的凹凸结构，形成在基板的一个面上; 至少布置在每个凸起的尖端部分上的近场光产生膜，所述近场光产生膜是包含选自Au，Al，Ag，Cu，Cr中的至少一种元素的层 ，Sb，W，Ni，In，Ge，Sn，Pb，Zn，Pd和C，或由这些材料中的一些形成的层形成的膜堆叠; 和填充在每个凹部中的树脂。
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