Pattern forming method
    4.
    发明授权
    Pattern forming method 有权
    图案形成方法

    公开(公告)号:US09588418B2

    公开(公告)日:2017-03-07

    申请号:US14571385

    申请日:2014-12-16

    Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.

    Abstract translation: 根据实施例的近场曝光掩模包括:基板; 具有凹凸的凹凸结构,形成在基板的一个面上; 至少布置在每个凸起的尖端部分上的近场光产生膜,所述近场光产生膜是包含选自Au,Al,Ag,Cu,Cr中的至少一种元素的层 ,Sb,W,Ni,In,Ge,Sn,Pb,Zn,Pd和C,或由这些材料中的一些形成的层形成的膜堆叠; 和填充在每个凹部中的树脂。

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