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    SEMICONDUCTOR DEVICE
    1.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240097045A1

    公开(公告)日：2024-03-21

    申请号：US18108089

    申请日：2023-02-10

    Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

    Inventor： Yuto ADACHI ,  Yoichi HORI ,  Makoto MIZUKAMI

    IPC: H01L29/872 ,  H01L29/06 ,  H01L29/861

    CPC classification number: H01L29/872 ,  H01L29/0692 ,  H01L29/8611 ,  H01L29/1608

    Abstract: A semiconductor device includes a first electrode, a first semiconductor layer of a first conductivity type located on the first electrode, a second semiconductor layer of a second conductivity type located on a portion of the first semiconductor layer, a metal layer located on the first and second semiconductor layers, a second electrode located on the metal layer, a bonding member connected to an upper surface of the second electrode, and a conductive member located between the second semiconductor layer and the metal layer. The metal layer has a Schottky junction with the first semiconductor layer. The conductive member is made of a different material from the metal layer. An area ratio of the conductive member in a region directly under the bonding member is higher than an area ratio of the conductive member in a region other than the region directly under the bonding member.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190088648A1

    公开(公告)日：2019-03-21

    申请号：US15911458

    申请日：2018-03-05

    Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    Inventor： Yoichi HORI

    IPC: H01L27/08 ,  H01L29/16 ,  H01L29/868 ,  H01L29/872

    CPC classification number: H01L27/0814 ,  H01L21/8213 ,  H01L29/0619 ,  H01L29/0626 ,  H01L29/1608 ,  H01L29/868 ,  H01L29/872

    Abstract: A semiconductor device is provided having a first region and a second region surrounding the first region includes a first electrode, a second electrode, a first semiconductor layer of a first conductivity type between the first electrode and the second electrode, a second semiconductor layer of the first conductivity type located over the first semiconductor layer, a third semiconductor layer of the second conductivity type on the second semiconductor layer in the first region, a fourth semiconductor layer of the first conductivity type between the third semiconductor layer and the second semiconductor layer, a fifth semiconductor layer of the second conductivity type on the second semiconductor layer in the second region, and a sixth semiconductor layer of the first conductivity type located between the fifth semiconductor layer and the second semiconductor layer, wherein the width of the fourth semiconductor layer is less than the width of the sixth semiconductor layer.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20170077220A1

    公开(公告)日：2017-03-16

    申请号：US15062207

    申请日：2016-03-07

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Ryoichi OHARA ,  Takao NODA ,  Yoichi HORI

    IPC: H01L29/06 ,  H01L29/872 ,  H01L29/78 ,  H01L29/16

    CPC classification number: H01L29/0634 ,  H01L29/0615 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/32 ,  H01L29/7811 ,  H01L29/872

    Abstract: A semiconductor device includes a SiC layer that has a first surface and a second surface, a first electrode in contact with the first surface, a first SiC region of a first conductivity type in the SiC layer, a second SiC region of a second conductivity type in the SiC layer and surrounding a portion of the first SiC region, a third SiC region of the second conductivity type in the SiC layer and surrounding the second SiC region, the third SiC region having an impurity concentration of the second conductivity type lower than that of the second SiC region, and a fourth SiC region of the second conductivity type in the SiC layer between the second SiC region and the third Sic region, the fourth SiC region having an impurity concentration of the second conductivity type higher than that of the second SiC region.

    Abstract translation: 半导体器件包括具有第一表面和第二表面的SiC层，与第一表面接触的第一电极，SiC层中的第一导电类型的第一SiC区域，第二导电类型的第二SiC区域 在SiC层中并且包围第一SiC区域的一部分，SiC层中的第二导电类型的第三SiC区域并且围绕第二SiC区域，具有低于第二导电类型的第二导电类型的第三导电类型的第三SiC区域 以及在第二SiC区域和第三Sic区域之间的SiC层中的第二导电类型的第四SiC区域，具有比第二SiC区域的第二导电类型的第二导电类型的杂质浓度高的第四SiC区域 SiC区域。

    SEMICONDUCTOR DEVICE
    5.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230299211A1

    公开(公告)日：2023-09-21

    申请号：US17881089

    申请日：2022-08-04

    Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    Inventor： Kei TANIHIRA ,  Yoichi HORI ,  Hiroshi KONO

    IPC: H01L29/872 ,  H01L29/06 ,  H01L29/10

    CPC classification number: H01L29/872 ,  H01L29/0619 ,  H01L29/1095

    Abstract: A semiconductor device includes a first electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a fifth semiconductor layer, and a second electrode. The fourth semiconductor layer is located in a second region on the first semiconductor layer. The fourth semiconductor layer is separated from the second semiconductor layer with a portion of the first semiconductor layer interposed. An impurity concentration of the fourth semiconductor layer is greater than an impurity concentration of the first semiconductor layer and less than an impurity concentration of the second semiconductor layer.

    SEMICONDUCTOR DEVICE
    6.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240088073A1

    公开(公告)日：2024-03-14

    申请号：US18177078

    申请日：2023-03-01

    Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

    Inventor： Yoichi HORI

    IPC: H01L23/00 ,  H01L23/31 ,  H01L29/417 ,  H01L29/872

    CPC classification number: H01L24/05 ,  H01L23/3135 ,  H01L29/417 ,  H01L29/872 ,  H01L23/296

    Abstract: According to one embodiment, a semiconductor device includes a first electrode and a semiconductor layer above the first electrode in a first direction. The semiconductor layer has a first region and a second region surrounding the first region in a first plane perpendicular to the first direction. A second electrode has a first portion and a second portion that is thinner than the first portion and surrounds the first portion. The first portion and the second portion are on the first region of the semiconductor layer. A first resin is on the second region and covers the second portion and an outer periphery of the first portion of the second electrode. A second resin covers the second electrode and the first resin and is a resin material different from the first resin.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20170077236A1

    公开(公告)日：2017-03-16

    申请号：US15062202

    申请日：2016-03-07

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Yoichi HORI ,  Tsuyoshi OOTA ,  Hiroshi KONO ,  Atsuko YAMASHITA

    IPC: H01L29/16 ,  H01L29/868 ,  H01L29/872 ,  H01L29/06 ,  H01L29/45

    CPC classification number: H01L29/1608 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0684 ,  H01L29/0692 ,  H01L29/45 ,  H01L29/868 ,  H01L29/872

    Abstract: A semiconductor device includes a semiconductor layer having a first surface and a second surface, a first electrode on the first surface, a second electrode on the second surface, a first semiconductor region of a first conductivity type in the semiconductor layer, a second semiconductor region of a second conductivity type in an element region of the semiconductor layer between the first semiconductor region and the first electrode, a third semiconductor region of the second conductivity type between the second semiconductor region and the first electrode, and a fourth semiconductor region of the second conductivity type in a termination region of the semiconductor layer inwardly of the first surface. A distance between the fourth semiconductor region and the second surface is greater than a distance between the second semiconductor region and the second surface.

    Abstract translation: 半导体器件包括具有第一表面和第二表面的半导体层，第一表面上的第一电极，第二表面上的第二电极，半导体层中的第一导电类型的第一半导体区域，第二半导体区域 在第一半导体区域和第一电极之间的半导体层的元件区域中的第二导电类型的第二导电类型的第二半导体区域，第二半导体类型的第二半导体区域和第二半导体区域的第二半导体区域 导电类型在第一表面内部的半导体层的端接区域中。 第四半导体区域和第二表面之间的距离大于第二半导体区域和第二表面之间的距离。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150372153A1

    公开(公告)日：2015-12-24

    申请号：US14475568

    申请日：2014-09-02

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Yoichi HORI ,  Takao NODA ,  Tsuyoshi OTA

    IPC: H01L29/868 ,  H01L29/66 ,  H01L23/528 ,  H01L29/872

    CPC classification number: H01L29/872 ,  H01L23/482 ,  H01L23/4824 ,  H01L23/4827 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L29/0619 ,  H01L29/1608 ,  H01L2224/04042 ,  H01L2224/4813 ,  H01L2224/4846 ,  H01L2224/4847 ,  H01L2224/491 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region that is formed between the first electrode and the second electrode and is in contact with the first electrode, a second semiconductor region that is formed between the first semiconductor region and the second electrode, a contact region that is formed between the second semiconductor region and the second electrode and is in contact with the second semiconductor region and the second electrode, a plurality of third semiconductor regions that are formed between the second electrode and the first semiconductor region and are in contact with the second electrode, and a wiring that is in contact with the second electrode, a portion of the wiring bonded to the second electrode being positioned above the third semiconductor region and not positioned above the contact region.

    Abstract translation: 半导体器件包括第一电极，第二电极，形成在第一电极和第二电极之间并与第一电极接触的第一半导体区域，形成在第一半导体区域和第二半导体区域之间的第二半导体区域 第二电极，形成在第二半导体区域和第二电极之间并与第二半导体区域和第二电极接触的接触区域，形成在第二电极和第一半导体区域之间的多个第三半导体区域 并且与第二电极接触，并且与第二电极接触的布线，接合到第二电极的布线的一部分位于第三半导体区域上方，并且不位于接触区域上方。

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