公开(公告)号：US20220085201A1

公开(公告)日：2022-03-17

申请号：US17191820

申请日：2021-03-04

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Shotaro Baba ,  Yusuke Kobayashi ,  Hiroaki Katou ,  Toshifumi Nishiguchi

IPC: H01L29/78 ,  H01L29/66

Abstract: According to one embodiment, a semiconductor device includes first, second, and third conductive members, a semiconductor member, and a first insulating member. The semiconductor member includes a first semiconductor region provided on the first conductive member, a second semiconductor region provided on a portion of the first semiconductor region, and a third semiconductor region provided on the second semiconductor region. An impurity concentration in the third semiconductor region is greater than in the first semiconductor region. The second conductive member includes a first conductive portion electrically connected to the second and third semiconductor regions. The third conductive member is provided on an other portion of the first semiconductor region. At least a portion of the first insulating member is between the semiconductor member and the third conductive member. The at least a portion of the first insulating member electrically insulates between the semiconductor member and the third conductive member.

公开(公告)号：US10883815B2

公开(公告)日：2021-01-05

申请号：US16281192

申请日：2019-02-21

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiko Fuji ,  Yoshihiro Higashi ,  Michiko Hara ,  Kazuaki Okamoto ,  Shotaro Baba

IPC: G01B7/14 ,  G01B7/24 ,  G01L1/12 ,  H01F1/00 ,  H01L41/12

Abstract: According to one embodiment, a sensor includes a film portion, one or more detectors fixed to the film portion, and a processor. The detector includes first and second detecting elements. The first detecting element includes a first magnetic layer. The second detecting element includes a second magnetic layer. A first change rate of a first signal is higher than a second change rate of the first signal. The first signal corresponds to a first electrical resistance of the first detecting element. A change rate of a second signal with respect to the change of the magnitude of the strain is higher than the second change rate. The second signal corresponds to a second electrical resistance of the second detecting element. The processor is configured to perform at least a first operation of outputting a second value. The second value is based on the second signal and a first value.

公开(公告)号：US10473685B2

公开(公告)日：2019-11-12

申请号：US15445748

申请日：2017-02-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiko Fuji ,  Michiko Hara ,  Kei Masunishi ,  Yoshihiro Higashi ,  Shiori Kaji ,  Akiko Yuzawa ,  Tomohiko Nagata ,  Kenji Otsu ,  Kazuaki Okamoto ,  Shotaro Baba

IPC: G01C19/5607 ,  G01P15/09 ,  G01P15/105 ,  G01P3/44

Abstract: According to one embodiment, a sensor includes a first support portion, a first movable portion, a first piezoelectric element, and a first magnetic element. The first movable portion extends in a first extension direction and is connected to the first support portion. The first piezoelectric element is fixed to the first movable portion. The first piezoelectric element includes a first electrode, a second electrode provided between the first electrode and the first movable portion, and a first piezoelectric layer provided between the first electrode and the second electrode. The first magnetic element is fixed to the first movable portion. The first magnetic element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer.

公开(公告)号：US10145751B2

公开(公告)日：2018-12-04

申请号：US15248412

申请日：2016-08-26

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiko Fuji ,  Michiko Hara ,  Kei Masunishi ,  Yoshihiro Higashi ,  Shiori Kaji ,  Akiko Yuzawa ,  Akio Hori ,  Tomohiko Nagata ,  Kazuaki Okamoto ,  Kenji Otsu ,  Shotaro Baba

IPC: G01L9/00 ,  G01L9/16 ,  H04R21/02 ,  A61B5/021 ,  H04R1/46 ,  A61B5/00

Abstract: According to one embodiment, a sensor includes a deformable film portion, a first sensing element and a second sensing element. The first sensing element is fixed to the film portion, and includes a first magnetic layer of a first material, a first opposing magnetic layer, and a first intermediate layer. The first intermediate layer is provided between the first magnetic layer and the first opposing magnetic layer. The second sensing element is fixed to the film portion, and includes a second magnetic layer of a second material, a second opposing magnetic layer, and a second intermediate layer. The second material is different from the first material. The second intermediate layer is provided between the second magnetic layer and the second opposing magnetic layer.

公开(公告)号：US11137281B2

公开(公告)日：2021-10-05

申请号：US16281157

申请日：2019-02-21

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiro Higashi ,  Yoshihiko Fuji ,  Kazuaki Okamoto ,  Shotaro Baba ,  Michiko Hara

IPC: G01H11/02 ,  H04R1/04

Abstract: According to one embodiment, a sensor includes a structure body, an element portion, and a power line. The structure body includes a supporter and a film portion. The film portion is supported by the supporter and includes an end portion. The end portion is aligned with a first direction and supported by the supporter. The element portion includes a first element provided at the film portion. The first element includes a first magnetic layer, a first opposing magnetic layer provided between the first magnetic layer and the film portion, and a first nonmagnetic layer provided between the first magnetic layer and the first opposing magnetic layer. A second direction from the first opposing magnetic layer toward the first magnetic layer crosses the first direction. The power line is electrically insulated from the element portion. The power line includes a portion aligned with the first direction.

公开(公告)号：US10481027B2

公开(公告)日：2019-11-19

申请号：US16145763

申请日：2018-09-28

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yoshihiko Fuji ,  Michiko Hara ,  Kei Masunishi ,  Yoshihiro Higashi ,  Shiori Kaji ,  Akiko Yuzawa ,  Akio Hori ,  Tomohiko Nagata ,  Kazuaki Okamoto ,  Kenji Otsu ,  Shotaro Baba

IPC: A61B5/021 ,  G01L9/00 ,  G01L9/16 ,  H04R21/02 ,  H04R1/46 ,  A61B5/00

Abstract: According to one embodiment, a sensor includes a deformable film portion, a first sensing element and a second sensing element. The first sensing element is fixed to the film portion, and includes a first magnetic layer of a first material, a first opposing magnetic layer, and a first intermediate layer. The first intermediate layer is provided between the first magnetic layer and the first opposing magnetic layer. The second sensing element is fixed to the film portion, and includes a second magnetic layer of a second material, a second opposing magnetic layer, and a second intermediate layer. The second material is different from the first material. The second intermediate layer is provided between the second magnetic layer and the second opposing magnetic layer.

公开(公告)号：US20190017891A1

公开(公告)日：2019-01-17

申请号：US15908626

申请日：2018-02-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kenji Otsu ,  Yoshihiko Fuji ,  Akiko Yuzawa ,  Michiko Hara ,  Yoshihiro Higashi ,  Shiori Kaji ,  Kazuaki Okamoto ,  Shotaro Baba ,  Tomohiko Nagata

IPC: G01L9/00 ,  H01L41/113 ,  H01L41/047 ,  H01L41/053 ,  H01L41/04

Abstract: According to one embodiment, a sensor includes a first film, a first sensor portion, and first to fourth terminals. The first film includes first to second electrode layers, and a piezoelectric layer. The first film is deformable. The first sensor portion is fixed to a portion of the first film. A first direction from the portion of the first film toward the first sensor portion is aligned with a direction from the second electrode layer toward the first electrode layer. The first sensor portion includes first to second sensor conductive layers, first to second magnetic layers, and a first intermediate layer. The first terminal is electrically connected to the first electrode layer. The second terminal is electrically connected to the second electrode layer. The third terminal is electrically connected to the first sensor conductive layer. The fourth terminal is electrically connected to the second sensor conductive layer.

公开(公告)号：US20180210041A1

公开(公告)日：2018-07-26

申请号：US15689221

申请日：2017-08-29

Applicant: Kabushiki Kaisha Toshiba

Inventor： Shotaro Baba ,  Yoshihiko Fuji ,  Kei Masunishi ,  Michiko Hara ,  Akiko Yuzawa ,  Shiori Kaji ,  Tomohiko Nagata ,  Yoshihiro Higashi ,  Kenji Otsu ,  Kazuaki Okamoto

IPC: G01R33/09 ,  G01B7/31 ,  G01D5/245 ,  G02B7/08 ,  G01L9/16

CPC classification number: G01R33/091 ,  A61B2562/0247 ,  G01B7/31 ,  G01D5/245 ,  G01L9/16 ,  G01R33/093 ,  G02B7/08 ,  H04R19/04

Abstract: According to one embodiment, a sensor includes a support body, a film portion, a first sensing element, and a structure body. The first sensing element is fixed to the film portion, and includes a first magnetic layer, a first opposing magnetic layer, and a first intermediate layer. The structure body includes a first region overlapping the support body, and a second region being continuous with the first region and overlapping the film portion. The structure body includes a first structure body layer, a first opposing structure body layer, and a first structure body intermediate layer. The first opposing structure body layer is provided between the first structure body layer and the support body and between the first structure body layer and the film portion. The first structure body intermediate layer is provided between the first structure body layer and the first opposing structure body layer.

公开(公告)号：US11942539B2

公开(公告)日：2024-03-26

申请号：US17471739

申请日：2021-09-10

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Shotaro Baba ,  Hiroaki Katou ,  Yuhki Fujino ,  Kouta Tomita

IPC: H01L29/78 ,  H01L21/763 ,  H01L29/06 ,  H01L29/40 ,  H01L29/861

CPC classification number: H01L29/7813 ,  H01L21/763 ,  H01L29/0638 ,  H01L29/407 ,  H01L29/7838 ,  H01L29/861

Abstract: A semiconductor device includes a polycrystalline silicon part buried in a termination region of a silicon layer. The polycrystalline silicon part contacts the silicon layer, has a higher crystal grain density than the silicon layer, and includes a heavy metal. The silicon layer includes a drift layer located in a cell region and the termination region. The drift layer has a lower first-conductivity-type impurity concentration than a silicon substrate. The drift layer includes a same element of heavy metal as the heavy metal included in the polycrystalline silicon part.

公开(公告)号：US11462637B2

公开(公告)日：2022-10-04

申请号：US17191820

申请日：2021-03-04

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Shotaro Baba ,  Yusuke Kobayashi ,  Hiroaki Katou ,  Toshifumi Nishiguchi

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66

Abstract: According to one embodiment, a semiconductor device includes first, second, and third conductive members, a semiconductor member, and a first insulating member. The semiconductor member includes a first semiconductor region provided on the first conductive member, a second semiconductor region provided on a portion of the first semiconductor region, and a third semiconductor region provided on the second semiconductor region. An impurity concentration in the third semiconductor region is greater than in the first semiconductor region. The second conductive member includes a first conductive portion electrically connected to the second and third semiconductor regions. The third conductive member is provided on an other portion of the first semiconductor region. At least a portion of the first insulating member is between the semiconductor member and the third conductive member. The at least a portion of the first insulating member electrically insulates between the semiconductor member and the third conductive member.