公开(公告)号：US08421054B2

公开(公告)日：2013-04-16

申请号：US13351452

申请日：2012-01-17

Applicant: Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

Inventor： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

IPC: H01L29/04 ,  H01L29/26

CPC classification number: H01L33/382 ,  H01L33/16 ,  H01L33/32

Abstract: A light-emitting diode element includes: an n-type conductive layer 2 being made of a gallium nitride-based compound, a principal surface being an m-plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.

Abstract translation: 发光二极管元件包括：n型导电层2，其由氮化镓基化合物制成，主表面为m面; 设置在n型导电层2的主表面的第一区域2a上的半导体多层结构21，包括p型导电层4和活性层3的半导体多层结构21; 设置在p型导电层4上的p电极5; 设置在n型导电层2的主表面的第二区域2b上的导体部分9，导体部分9与通孔8的内壁接触; 以及设置在n型导电层2的主表面的第二区域2b上的n型正面电极6，n型正面电极6与导体部分9接触。

公开(公告)号：US20120113656A1

公开(公告)日：2012-05-10

申请号：US13351452

申请日：2012-01-17

Applicant: Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

Inventor： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

IPC: F21V21/00 ,  H01L33/38

CPC classification number: H01L33/382 ,  H01L33/16 ,  H01L33/32

Abstract: A light-emitting diode element includes: an n-type conductive layer 2 being made of a gallium nitride-based compound, a principal surface being an m-plane; a semiconductor multilayer structure 21 provided on a first region 2a of the principal surface of the n-type conductive layer 2, the semiconductor multilayer structure 21 including a p-type conductive layer 4 and an active layer 3; a p-electrode 5 provided on the p-type conductive layer 4; a conductor portion 9 provided on a second region 2b of the principal surface of the n-type conductive layer 2, the conductor portion 9 being in contact with an inner wall of a through hole 8; and an n-type front surface electrode 6 provided on the second region 2b of the principal surface of the n-type conductive layer 2, the n-type front surface electrode 6 being in contact with the conductor portion 9.

Abstract translation: 发光二极管元件包括：n型导电层2，其由氮化镓基化合物制成，主表面为m面; 设置在n型导电层2的主表面的第一区域2a上的半导体多层结构21，包括p型导电层4和活性层3的半导体多层结构21; 设置在p型导电层4上的p电极5; 设置在n型导电层2的主表面的第二区域2b上的导体部分9，导体部分9与通孔8的内壁接触; 以及设置在n型导电层2的主表面的第二区域2b上的n型正面电极6，n型正面电极6与导体部分9接触。

公开(公告)号：US20120085986A1

公开(公告)日：2012-04-12

申请号：US13321923

申请日：2010-06-09

Applicant: Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

Inventor： Junko Iwanaga ,  Toshiya Yokogawa ,  Atsushi Yamada

IPC: H01L33/04

CPC classification number: H01L33/38 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382

Abstract: The light-emitting diode element of this invention includes: an n-type GaN substrate (7), of which the principal surface (7a) is an m plane; and a multilayer structure on the principal surface (7a) of the substrate (7), which includes an n-type semiconductor layer (2), an active layer (3) on a first region (2a) of the upper surface of the n-type semiconductor layer (2), a p-type semiconductor layer (4), an anode electrode layer (5), and a cathode electrode layer (6) on a second region (2b) of the upper surface of the n-type semiconductor layer (2). These layers (2, 3, 4) have all been grown epitaxially through an m-plane growth. The n-type dopant concentration in the substrate (7) and n-type semiconductor layer (2) is 1×1018 cm−3 or less. When viewed perpendicularly to the principal surface (7a), a gap of 4 μm or less is left between the anode and cathode electrode layers (5, 6) and the anode electrode layer (5) is arranged at a distance of 45 μm or less from an edge of the cathode electrode layer (6) that faces the anode electrode layer (5).

Abstract translation: 本发明的发光二极管元件包括：主面（7a）为m面的n型GaN衬底（7）; 以及在基板（7）的主表面（7a）上的多层结构，其包括n型半导体层（2），在n的上表面的第一区域（2a）上的有源层（3） 型半导体层（2），p型半导体层（4），阳极电极层（5）以及在n型上表面的第二区域（2b）上的阴极电极层 半导体层（2）。 这些层（2,3,4）全部通过m平面生长而外延生长。 基板（7）和n型半导体层（2）中的n型掺杂剂浓度为1×1018cm -3以下。 当垂直于主表面（7a）观察时，在阳极和阴极电极层（5,6）之间留下4μm或更小的间隙，并且阳极电极层（5）被布置在45μm或更小的距离处 从所述阴极电极层（6）的与所述阳极电极层（5）相对的边缘。

公开(公告)号：US08933543B2

公开(公告)日：2015-01-13

申请号：US13503972

申请日：2011-03-15

Applicant: Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Akihiro Isozaki

Inventor： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Akihiro Isozaki

IPC: H01L33/16 ,  H01L21/02 ,  H01L33/40 ,  H01L23/532 ,  H01L33/00 ,  H01L33/32 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

CPC classification number: H01L21/02579 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L23/53247 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/13 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/32341 ,  H01L2924/00

Abstract: A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.

Abstract translation: 本发明的氮化物系半导体器件包括：氮化物系半导体多层结构体20，其具有p型半导体区域，表面12从m面倾斜不小于1°的角度， 超过5°; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）层26形成。电极30包括Mg层32和Ag层34 设置在Mg层32上.Mg层32与半导体多层结构体20的p型半导体区域的表面12接触。

公开(公告)号：US08729587B2

公开(公告)日：2014-05-20

申请号：US13596849

申请日：2012-08-28

Applicant: Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

Inventor： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

IPC: H01L33/30 ,  H01L33/50

CPC classification number: H01L33/40 ,  B82Y20/00 ,  H01L29/045 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/32341

Abstract: An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.

Abstract translation: 示例性的基于氮化物的半导体器件包括：氮化物基半导体多层结构20，其具有p型GaN基半导体区域，其表面12从m面倾斜不小于1°的角度，而不是更多 超过5°或主表面具有多个m平面步骤; 以及布置在p型GaN基半导体区域上的电极30。 电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型GaN类半导体区域的表面12接触。

公开(公告)号：US08334199B2

公开(公告)日：2012-12-18

申请号：US12937758

申请日：2010-03-17

Applicant: Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

Inventor： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

IPC: H01L21/3205

CPC classification number: H01L21/28575 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40

Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

Abstract translation: 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体多层结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的Ag层34.Zn层32与p型半导体区域的表面接触 半导体多层结构20。

公开(公告)号：US08306085B2

公开(公告)日：2012-11-06

申请号：US13234326

申请日：2011-09-16

Applicant: Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Yoshiaki Matsuda

Inventor： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Yoshiaki Matsuda

IPC: H01S5/10

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/78 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2201 ,  Y10S148/028

Abstract: The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.

Abstract translation: 本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。 首先，设置分割成各个基板的晶片1。 构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。 在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。 因此，可以以良好的产率进行裂解。

公开(公告)号：US20110037089A1

公开(公告)日：2011-02-17

申请号：US12937758

申请日：2010-03-17

Applicant: Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

Inventor： Mitsuaki Oya ,  Toshiya Yokogawa ,  Atsushi Yamada ,  Akihiro Isozaki

IPC: H01L33/40 ,  H01L21/20 ,  H01L29/20

CPC classification number: H01L21/28575 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40

Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

公开(公告)号：US09252330B2

公开(公告)日：2016-02-02

申请号：US13813792

申请日：2011-08-05

Applicant: Akihiro Isozaki ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

Inventor： Akihiro Isozaki ,  Akira Inoue ,  Atsushi Yamada ,  Toshiya Yokogawa

IPC: H01L33/32 ,  H01L33/16 ,  H01L33/20 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/20 ,  H01L2933/0083

Abstract: A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.

Abstract translation: 根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。

公开(公告)号：US08748899B2

公开(公告)日：2014-06-10

申请号：US13447368

申请日：2012-04-16

Applicant: Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

Inventor： Toshiya Yokogawa ,  Mitsuaki Oya ,  Atsushi Yamada ,  Ryou Kato

IPC: H01L29/778 ,  H01L33/32 ,  H01L29/78

CPC classification number: H01L33/32 ,  H01L33/16 ,  H01L33/40 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2924/181 ,  Y10T436/112499 ,  H01L2924/00012

Abstract: A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structure 20 with a p-type semiconductor region, of which the surface 12 defines a tilt angle of one to five degrees with respect to an m plane, and an electrode 30, which is arranged on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x≧0, y≧0 and z≧0) semiconductor layer 26. The electrode 30 includes an Mg layer 32, which is in contact with the surface 12 of the p-type semiconductor region, and a metal layer 34 formed on the Mg layer 32. The metal layer 34 is formed from at least one metallic element that is selected from the group consisting of Pt, Mo and Pd.

Abstract translation: 根据本公开的氮化物基半导体器件包括具有p型半导体区域的氮化物基半导体多层结构20，其表面12相对于m平面限定1至5度的倾斜角，以及 布置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）半导体层26制成。电极30包括Mg层32，其接触 与p型半导体区域的表面12以及形成在Mg层32上的金属层34.金属层34由选自Pt，Mo和Pd中的至少一种金属元素形成。