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1.发明授权Naphthalene diimide-Zn(II) complex having selectivity for pyrophosphate, preparation method thereof and detecting method of pyrophosphate using the same 有权对焦磷酸盐具有选择性的萘二酰亚胺-Zn（II）络合物及其制备方法和使用其的焦磷酸盐的检测方法公开(公告)号：US07563897B2
公开(公告)日：2009-07-21
申请号：US11968120
申请日：2007-12-31
申请人： Ju Young Yoon , Ha Na Lee , Sook Kyung Kim
发明人： Ju Young Yoon , Ha Na Lee , Sook Kyung Kim
CPC分类号： G01N33/84 , C07D471/06 , G01N2021/7786
摘要： The present invention provides a novel fluorescent chemosensor including a naphthalene diimide-Zn(II) complex, which can efficiently recognize pyrophosphate (PPi) at pH 7.4. The fluorescent chemosensor exhibits a new kind of excimer fluorescence, which is selective for PPi in 100% aqueous solution. Further, since the naphthalene diimide-Zn(II) complex of the present invention does not couple with inorganic phosphate (Pi) or adenosine triphosphate (ATP) and has high selectivity for PPi, it can be usefully used to detect pyrophosphate (PPi), which serves to transfer signals and store energy in living organisms.
摘要翻译： 本发明提供了一种新颖的荧光化学传感器，其包括萘二酰亚胺-Zn（II）络合物，其可以有效地识别pH 7.4的焦磷酸盐（PPi）。 荧光化学传感器显示出新型的准分子荧光，其对于100％水溶液中的PPi是选择性的。 此外，由于本发明的萘二酰亚胺-Zn（II）配合物不与无机磷酸盐（Pi）或三磷酸腺苷（ATP）偶联，对PPi具有高选择性，因此可用于检测焦磷酸（PPi）， 其用于传递信号并将能量储存在活生物体中。
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2.发明申请NAPHTHALENE DIIMIDE-ZN(II) COMPLEX HAVING SELECTIVITY FOR PYROPHOSPHATE, PREPARATION METHOD THEREOF AND DETECTING METHOD OF PYROPHOSPHATE USING THE SAME 有权具有磷酸选择性的萘二甲酰基-D-二炔（II）复合物，其制备方法和使用其的磷酸酯的检测方法公开(公告)号：US20080261196A1
公开(公告)日：2008-10-23
申请号：US11968120
申请日：2007-12-31
申请人： Ju Young Yoon , Ha Na Lee , Sook Kyung Kim
发明人： Ju Young Yoon , Ha Na Lee , Sook Kyung Kim
IPC分类号： C12Q1/00 , C07D401/14
CPC分类号： G01N33/84 , C07D471/06 , G01N2021/7786
摘要： The present invention provides a novel fluorescent chemosensor including a naphthalene diimide-Zn(II) complex, which can efficiently recognize pyrophosphate (PPi) at pH 7.4. The fluorescent chemosensor exhibits a new kind of excimer fluorescence, which is selective for PPi in 100% aqueous solution. Further, since the naphthalene diimide-Zn(II) complex of the present invention does not couple with inorganic phosphate (Pi) or adenosine triphosphate (ATP) and has high selectivity for PPi, it can be usefully used to detect pyrophosphate (PPi), which serves to transfer signals and store energy in living organisms.
摘要翻译： 本发明提供了一种新颖的荧光化学传感器，其包括萘二酰亚胺-Zn（II）络合物，其可以有效地识别pH 7.4的焦磷酸盐（PPi）。 荧光化学传感器显示出新型的准分子荧光，其对于100％水溶液中的PPi是选择性的。 此外，由于本发明的萘二酰亚胺-Zn（II）配合物不与无机磷酸盐（Pi）或三磷酸腺苷（ATP）偶联，对PPi具有高选择性，因此可用于检测焦磷酸（PPi）， 其用于传递信号并将能量储存在活生物体中。
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公开(公告)号：US20090207660A1
公开(公告)日：2009-08-20
申请号：US12425025
申请日：2009-04-16
申请人： Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
发明人： Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
CPC分类号： G11C16/12 , G11C11/5628 , G11C11/5635 , G11C16/0483 , G11C16/16 , G11C16/3445 , G11C16/3459 , G11C2211/5621 , G11C2211/5642
摘要： Erase and program methods of a flash memory device including MLCs for increasing the program speed are described. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.
摘要翻译： 描述包括用于增加程序速度的MLC的闪速存储器件的擦除和编程方法。 在擦除方法中，MLC被预编程，使得可以减少分布有MLC的阈值电压的电压范围。 因此，当擦除MLC时，可以减少故障发生率，可以提高MLC的阈值电压分布，并且可以在随后的程序操作中缩短整个编程时间。
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公开(公告)号：US20090201728A1
公开(公告)日：2009-08-13
申请号：US12424984
申请日：2009-04-16
申请人： Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
发明人： Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
CPC分类号： G11C16/12 , G11C11/5628 , G11C11/5635 , G11C16/0483 , G11C16/16 , G11C16/3445 , G11C16/3459 , G11C2211/5621 , G11C2211/5642
摘要： Erase and program methods of a flash memory device including MLCs for increasing the program speed are described. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.
摘要翻译： 描述包括用于增加程序速度的MLC的闪速存储器件的擦除和编程方法。 在擦除方法中，MLC被预编程，使得可以减少分布有MLC的阈值电压的电压范围。 因此，当擦除MLC时，可以降低失败发生率，可以提高MLC的阈值电压分布，并且可以在随后的程序操作中缩短整个编程时间。
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5.发明授权Erase and program method of flash memory device for increasing program speed of flash memory device 有权闪存设备的擦除和编程方法，用于提高闪存设备的程序速度公开(公告)号：US07539057B2
公开(公告)日：2009-05-26
申请号：US11275279
申请日：2005-12-21
申请人： Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
发明人： Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
CPC分类号： G11C16/12 , G11C11/5628 , G11C11/5635 , G11C16/0483 , G11C16/16 , G11C16/3445 , G11C16/3459 , G11C2211/5621 , G11C2211/5642
摘要： Erase and program methods of a flash memory device including MLCs for increasing the program speed are described. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.
摘要翻译： 描述包括用于增加程序速度的MLC的闪速存储器件的擦除和编程方法。 在擦除方法中，MLC被预编程，使得可以减少分布有MLC的阈值电压的电压范围。 因此，当擦除MLC时，可以减少故障发生率，可以提高MLC的阈值电压分布，并且可以在随后的程序操作中缩短整个编程时间。
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公开(公告)号：US07990771B2
公开(公告)日：2011-08-02
申请号：US12425025
申请日：2009-04-16
申请人： Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
发明人： Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
CPC分类号： G11C16/12 , G11C11/5628 , G11C11/5635 , G11C16/0483 , G11C16/16 , G11C16/3445 , G11C16/3459 , G11C2211/5621 , G11C2211/5642
摘要： A method of erasing and programming a flash memory device including multi-level cells (MLCs). MLCs of a word line are selected and some of the MLCs are pre-programmed based on whether their individual threshold voltages are included in a first voltage range. The selected MLCs are pre-programmed with a pre-program (first) voltage; and the remaining MLCs are prohibited from pre-programming; then the remaining MLCs connected to the selected word line are programmed by applying a program (second) voltage that gradually rises from the pre-program voltage at a ratio of a step voltage n for the selected line.
摘要翻译： 一种擦除和编程包括多电平单元（MLC）的闪速存储器件的方法。 选择字线的MLC，并且基于它们的各自的阈值电压是否被包括在第一电压范围中，一些MLC被预先编程。 所选择的MLC以预编程（第一）电压进行预编程; 其余的MLC被禁止进行预编程; 那么连接到所选择的字线的剩余MLC通过应用从预编程电压以所选行的阶梯电压n的比率逐渐上升的程序（第二）电压被编程。
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公开(公告)号：US07978532B2
公开(公告)日：2011-07-12
申请号：US12424984
申请日：2009-04-16
申请人： Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
发明人： Kyung Pil Hwang , Hyung Seok Kim , Keum Hwan Noh , Ju In Kim , Min Kyu Lee , Seok Jin Joo , Sook Kyung Kim
CPC分类号： G11C16/12 , G11C11/5628 , G11C11/5635 , G11C16/0483 , G11C16/16 , G11C16/3445 , G11C16/3459 , G11C2211/5621 , G11C2211/5642
摘要： Erase and program methods of a flash memory device including MLCs for increasing the program speed. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.
摘要翻译： 包括用于增加程序速度的MLC的闪存设备的擦除和编程方法。 在擦除方法中，MLC被预编程，使得可以减少分布有MLC的阈值电压的电压范围。 因此，当擦除MLC时，可以减少故障发生率，可以提高MLC的阈值电压分布，并且可以在随后的程序操作中缩短整个编程时间。
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