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    DIAMOND FILM DEPOSITION
    5.
    发明申请
    DIAMOND FILM DEPOSITION 审中-公开
    金刚石膜沉积

    公开(公告)号：US20090017258A1

    公开(公告)日：2009-01-15

    申请号：US11775846

    申请日：2007-07-10

    申请人： John A. Carlisle ,  Charles F. West ,  Jerry W. Zimmer

    发明人： John A. Carlisle ,  Charles F. West ,  Jerry W. Zimmer

    IPC分类号： B32B5/16 ,  C23C16/27

    CPC分类号： C23C16/279 ,  C23C16/271 ,  Y10T428/24372

    摘要： Diamond material made by a hot filament chemical vapor deposition process, providing large film area, good growth rate, phase purity, small average grain size, smooth surfaces, and other useful properties. Low substrate temperatures can be used. Control of process variables such as pressure and filament temperature and reactant ratio allow control of the diamond properties. Applications include MEMS, wear resistance low friction coatings, biosensors, and electronics.

    摘要翻译： 通过热丝化学气相沉积工艺制成的金刚石材料，提供大的膜面积，良好的生长速率，相纯度，小平均晶粒尺寸，光滑的表面和其他有用的性质。 可以使用低的基板温度。 过程变量（如压力和细丝温度和反应物比例）的控制可以控制金刚石的性质。 应用包括MEMS，耐磨低摩擦涂层，生物传感器和电子。

    Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates
    6.
    发明授权
    Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates 有权
    在低温和高沉积速率下生长纯纳米晶金刚石薄膜的方法

    公开(公告)号：US07556982B2

    公开(公告)日：2009-07-07

    申请号：US10892736

    申请日：2004-07-15

    申请人： John A. Carlisle ,  Dieter M. Gruen ,  Orlando Auciello ,  Xingcheng Xiao

    发明人： John A. Carlisle ,  Dieter M. Gruen ,  Orlando Auciello ,  Xingcheng Xiao

    IPC分类号： H01L21/00

    CPC分类号： C23C16/274 ,  C23C16/277 ,  Y10T428/30

    摘要： A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500° C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 1010sites/cm2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500° C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500° C.-4 hours or less onto a variety of substrates such as MEMS devices.

    摘要翻译： 在衬底温度小于约500℃下以不小于约0.2微米/小时的速度在衬底上沉积纳米晶金刚石膜的方法。该方法包括将纳米晶体金刚石粉末的衬底表面接种到不是 小于约1010sites / cm2，并且使接种的底物表面与约99体积％的除氦之外的惰性气体和约1体积％的甲烷或氢气以及一种或多种乙炔，富勒烯和蒽的惰性气体接触 微波诱导的等离子体的存在，同时保持衬底温度低于约500℃，以不小于约0.2微米/小时的速率将纳米晶体金刚石沉积在接种的衬底表面上。 平均粒径小于约20纳米的纳米晶体金刚石的涂层可以以500℃-4小时以下的热预算沉积到诸如MEMS器件的各种基板上。

    Novel ultrananocrystalline diamond probes for high-resolution low-wear nanolithographic techniques
    7.
    发明申请
    Novel ultrananocrystalline diamond probes for high-resolution low-wear nanolithographic techniques 审中-公开
    用于高分辨率低磨损纳米光刻技术的新型超微晶金刚石探针

    公开(公告)号：US20070220959A1

    公开(公告)日：2007-09-27

    申请号：US11542812

    申请日：2006-10-04

    申请人： Anirudha V. Sumant ,  Robert W. Carpick ,  Orlando H. Auciello ,  John A. Carlisle

    发明人： Anirudha V. Sumant ,  Robert W. Carpick ,  Orlando H. Auciello ,  John A. Carlisle

    IPC分类号： G01B5/28

    CPC分类号： G01Q60/38 ,  G01Q70/14

    摘要： A monolithically integrated 3-D membrane or diaphragm/tip (called 3-D tip) of substantially all UNCD having a tip with a radius of about less than 50 nm capable of measuring forces in all three dimensions or being used as single tips or in large arrays for imprint of data on memory media, fabrication of nanodots of different materials on different substrates and many other uses such as nanolithography production of nanodots of biomaterials on substrates, etc. A method of molding UNCD is disclosed including providing a substrate with a predetermined pattern and depositing an oxide layer prior to depositing a carbide-forming metallic seed layer, followed by seeding with diamond nano or micropowder in solvent suspension, or mechanically polishing with diamond powder, or any other seeding method, followed by UNCD film growth conforming to the predetermined pattern. Thereafter, one or more steps of masking and/or etching and/or coating and/or selective removal and/or patterning and/or electroforming and/or lapping and/or polishing are used in any combination to form the tip or probe.

    摘要翻译： 基本上所有UNCD具有半径约小于50nm的尖端的能够测量所有三维尺寸的力或用作单个尖端的基本上所有UNCD的单片集成的3-D膜或膜片/尖端（称为3-D尖端） 用于记录介质上的数据压印的大型阵列，不同衬底上的不同材料的纳米点的制造以及许多其他用途，例如在衬底上的生物材料的纳米点的纳米光刻生产。公开了一种模制UNCD的方法，包括提供具有预定 在沉积形成碳化物的金属种子层之前沉积氧化物层，然后在溶剂悬浮液中用金刚石纳米或微粉子接种，或用金刚石粉末机械抛光，或任何其他播种方法，随后是符合 预定模式。 此后，以任何组合使用掩蔽和/或蚀刻和/或涂覆和/或选择性去除和/或图案化和/或电铸和/或研磨和/或抛光的一个或多个步骤以形成尖端或探针。