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    System for adjusting radiation target sites dynamically according to moving states of target object and for creating lookup table of the moving states
    1.
    发明授权
    System for adjusting radiation target sites dynamically according to moving states of target object and for creating lookup table of the moving states 有权

    公开(公告)号：US11504551B2

    公开(公告)日：2022-11-22

    申请号：US15931549

    申请日：2020-05-13

    Applicant: Jian-Kuen Wu ,  Yu-Jen Wang

    Inventor： Jian-Kuen Wu ,  Yu-Jen Wang

    IPC: A61N5/10

    Abstract: A system for adjusting radiation target sites dynamically according to the moving states of a target object and for creating a lookup table of the moving states includes a detection chip, a radiation generation device, and a lookup table. The detection chip can be fixed on the target object to detect the current moving state of the target object. The detection chip or the radiation generation device, both configured for wireless signal transmission to each other, can activate or deactivate the radiation emitters of the radiation generation device individually according to the current moving state of the target object and the contents of the lookup table. As the system uses wireless transmission, and the lookup table has recorded the working state of each radiation emitter in each moving state of the target object, radiotherapy can be performed without a large number of tubes or sensors.

    MTJ element for STT MRAM
    3.
    发明授权
    MTJ element for STT MRAM 有权
    STT MRAM的MTJ元素

    公开(公告)号：US08900884B2

    公开(公告)日：2014-12-02

    申请号：US13525502

    申请日：2012-06-18

    Applicant: Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

    Inventor： Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

    IPC: H01L21/00 ,  H01L29/82

    CPC classification number: H01L43/10 ,  H01L43/08 ,  H01L43/12

    Abstract: An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.

    Abstract translation: 公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。 这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

    Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications
    5.
    发明授权
    Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications 有权
    具有改进的垂直各向异性的工程磁性层，使用玻璃化剂进行自旋电子应用

    公开(公告)号：US08698260B2

    公开(公告)日：2014-04-15

    申请号：US13548859

    申请日：2012-07-13

    Applicant: Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

    Inventor： Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

    IPC: H01L29/82

    CPC classification number: H01L43/08 ,  H01L43/10

    Abstract: A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region.

    Abstract translation: 公开了一种自旋电子器件中的磁性元件或用作畴壁运动装置中的传播介质的磁性元件，其中分别具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面产生增强的表面垂直各向异性以增加热量 磁性隧道结中的稳定性。 自由层可以是单层或复合物，并且由在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 CoFeB自由层选择性地沿着第一和第二界面结晶，但是在含有玻璃试剂的中间区域保持非晶形特征，提供退火温度小于中间区域的结晶温度。

    MTJ Element for STT MRAM
    6.
    发明申请
    MTJ Element for STT MRAM 有权
    STT MRAM的MTJ元素

    公开(公告)号：US20130334629A1

    公开(公告)日：2013-12-19

    申请号：US13525502

    申请日：2012-06-18

    Applicant: Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

    Inventor： Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

    IPC: H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/10 ,  H01L43/08 ,  H01L43/12

    Abstract: An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.

    Abstract translation: 公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。 这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

    Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer
    7.
    发明申请
    Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer 有权
    通过插入硼粉尘层的磁性器件应用具有高热稳定性的自由层

    公开(公告)号：US20130270523A1

    公开(公告)日：2013-10-17

    申请号：US13448557

    申请日：2012-04-17

    Applicant: Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

    Inventor： Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

    IPC: H01L43/10 ,  H01L43/12

    CPC classification number: G01R33/091 ,  G11B5/3906 ,  H01F10/123 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

    Abstract: A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.

    Abstract translation: 在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能 。 每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。 自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。 所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。 垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。 实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

    High Thermal Stability Reference Structure with Out-of-Plane Aniotropy for Magnetic Device Applications
    8.
    发明申请
    High Thermal Stability Reference Structure with Out-of-Plane Aniotropy for Magnetic Device Applications 有权
    用于磁性器件应用的具有非平面各向异性的高热稳定性参考结构

    公开(公告)号：US20130224521A1

    公开(公告)日：2013-08-29

    申请号：US13406972

    申请日：2012-02-28

    Applicant: Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

    Inventor： Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

    IPC: G11B5/66 ,  H01F41/22 ,  H01F41/14

    CPC classification number: H01L43/12 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/66 ,  G11B5/84 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/305 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

    Abstract: Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell.

    Abstract translation: 通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物/ DL2，在磁性器件中，除了通过在400℃下的更高的热稳定性之外，增强了Hc和Hk / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。 RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压体。 参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并增加存储器单元的保留时间。

    Reverse connection MTJ cell for STT MRAM
    9.
    发明授权
    Reverse connection MTJ cell for STT MRAM 有权
    用于STT MRAM的反向连接MTJ单元

    公开(公告)号：US08416600B2

    公开(公告)日：2013-04-09

    申请号：US12626092

    申请日：2009-11-25

    Applicant: Chun-Jung Lin ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

    Inventor： Chun-Jung Lin ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

    IPC: G11C11/00

    CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/12

    Abstract: Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).

    Abstract translation: 本文公开了用于MRAM的反向连接STT MTJ元件的装置和方法，以在将MTJ元件的磁化从平行方向切换到反平行方向时克服源退化效应。 具有反向连接MTJ元件的MRAM的存储单元包括具有源极，栅极和漏极的开关器件和具有自由层，固定层和绝缘体层的反向连接MTJ器件， 自由层和固定层。 反连接MTJ器件的自由层连接到开关器件的漏极，固定层连接到位线（BL）。 反向连接MTJ设备将由源退化效应引起的存储器单元的较低IMTJ能力应用于较不严格的IMTJ（AP-> P），同时为更苛刻的IMTJ（P-> AP）保持较高的IMTJ能力。

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