Invention Grant
- Patent Title: Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gate
- Patent Title (中): 使用字线过驱动和高k金属栅极提高磁隧道结的编程电流
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Application No.: US12687747Application Date: 2010-01-14
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Publication No.: US08223534B2Publication Date: 2012-07-17
- Inventor: Shine Chung , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang , Hung-Sen Wang
- Applicant: Shine Chung , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang , Hung-Sen Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slatsil & Matsil, L.L.P.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.
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