公开(公告)号：US10392699B2

公开(公告)日：2019-08-27

申请号：US15509662

申请日：2015-09-08

Applicant: JSR CORPORATION

Inventor： Hitoshi Hamaguchi ,  Kenrou Tanaka ,  Kenzou Ookita ,  Keisuke Kuriyama

IPC: C23C16/44 ,  H05K3/00 ,  G03F7/20 ,  B05D3/06 ,  B29C59/16 ,  C08J7/00 ,  G03F7/039 ,  C09D129/10 ,  C09D133/10 ,  C09D133/14 ,  C09D133/16 ,  C23C16/56 ,  H05K3/12 ,  G03F7/004 ,  G03F7/18 ,  G03F7/24

Abstract: The present invention relates to: a method of producing a structure having a recessed pattern; a resin composition; a method of forming an electroconductive film; an electronic circuit; and an electronic device. The method of producing a structure having a recessed pattern includes the following steps (i) and (ii), and the recessed pattern has a film thickness that is thinner by 5% to less than 90% with respect to that of a coating film obtained in the step (i): (i) the step of forming a coating film on a non-flat surface of a structure using a resin composition which includes an acid-dissociable group-containing polymer and an acid generator; and (ii) the step of forming a recess by subjecting a prescribed part of a portion of the coating film to irradiation with radiation.

公开(公告)号：US09980392B2

公开(公告)日：2018-05-22

申请号：US15262404

申请日：2016-09-12

Applicant: JSR CORPORATION

Inventor： Hitoshi Hamaguchi ,  Kenrou Tanaka ,  Kenzou Ookita ,  Keisuke Kuriyama

IPC: G03F7/039 ,  G03F7/36 ,  G03F7/40 ,  H03K3/10 ,  H05K3/12 ,  H05K3/10 ,  G03F7/004 ,  G03F7/027 ,  G03F7/20

CPC classification number: H05K3/107 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/0392 ,  G03F7/36 ,  G03F7/40 ,  G03F7/70 ,  H05K3/105 ,  H05K3/1258

Abstract: A process for producing a substrate having wiring includes steps (i) to (v) described as follows: (i) applying a radiation-sensitive composition on a substrate to form a coating film; (ii) irradiating a prescribed part of the coating film with radiation to allow the coating film to have a radiation-irradiated region and a radiation-unirradiated region; (iii) allowing the coating film obtained in the step (ii) to have a concave region and a convex region; (iv) forming wiring on the concave region; and (v) removing the convex region by an application of radiation or by heating.

公开(公告)号：US09746775B2

公开(公告)日：2017-08-29

申请号：US14888244

申请日：2014-04-15

Applicant: JSR CORPORATION

Inventor： Hitoshi Hamaguchi ,  Kenrou Tanaka ,  Kenzou Ookita ,  Keisuke Kuriyama

IPC: G03F7/039 ,  G03F7/038 ,  G03F7/36 ,  H05K1/02 ,  H05K3/12 ,  G03F7/38 ,  H05K3/10 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H05K3/28

CPC classification number: G03F7/38 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/16 ,  G03F7/20 ,  G03F7/36 ,  H05K1/0296 ,  H05K3/107 ,  H05K3/1208 ,  H05K3/287 ,  H05K2201/0145 ,  H05K2201/0154 ,  H05K2201/0166

Abstract: Provided is a method for manufacturing a substrate having a concave pattern to be used for forming a high-definition pattern while suppressing wet-spreading and bleeding of a film-forming ink, provided is a composition to be used for manufacturing the substrate, and provided are a method for forming a conductive film, an electronic circuit, and an electronic device.The method for manufacturing a substrate having a concave pattern includes: (i) a step of applying, on a substrate 1, a composition containing a polymer having an acid-dissociable group and an acid generator to form a coating film 2 and (ii) a step of irradiating a predetermined portion of the coating film 2 with radiation. The method for forming a conductive film includes applying a conductive film-forming ink on the concave pattern formed in the exposed portion of the coating film 2 and heating the ink to form a pattern 6. The electronic circuit and the electronic device are provided by using the method for forming a conductive film.

公开(公告)号：US10032920B2

公开(公告)日：2018-07-24

申请号：US15582823

申请日：2017-05-01

Applicant: JSR Corporation

Inventor： Hitoshi Hamaguchi ,  Kenrou Tanaka ,  Kenzou Ookita ,  Keisuke Kuriyama

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/288

CPC classification number: H01L29/78636 ,  H01L21/28 ,  H01L21/288 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7869

Abstract: The thin film transistor includes a first insulating layer provided on a substrate; a source electrode and a drain electrode that are provided on the first insulating layer; a semiconductor layer provided so as to cover the first insulating layer, the source electrode, and the drain electrode; a second insulating layer provided on the semiconductor layer; and a gate electrode provided on the second insulating layer, in which the first insulating layer is formed of a hydrophilic/hydrophobic material and has a recess portion, and the source electrode and the drain electrode are provided so as to fill the recess portion of the first insulating layer.

公开(公告)号：US09543201B2

公开(公告)日：2017-01-10

申请号：US14836236

申请日：2015-08-26

Applicant: JSR Corporation

Inventor： Kenzou Ookita ,  Isao Aritome ,  Keisuke Kuriyama ,  Taichi Matsumoto ,  Kazuto Watanabe ,  Atsushi Kobayashi ,  Sugirou Shimoda

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/522 ,  H01L23/485 ,  H01L23/498 ,  H01L21/48 ,  H01L21/288 ,  H01L23/48 ,  H01L23/14 ,  H01L23/532

CPC classification number: H01L21/76895 ,  H01L21/288 ,  H01L21/486 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/485 ,  H01L23/49827 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on an upper side of the substrate and a lower wire formed on a lower side are electrically connected to one another by the contact plug. A coating film is formed on an upper surface of the substrate and inner surface of the through hole by applying a metal film-forming composition containing at least one salt of and a particle of a metal to the substrate provided with the through hole. A metal film is formed by heating the coating film, and plated by filling up the through hole by depositing a conductor on the metal film by a plating process using the metal film as a seed layer. An excess conductor deposited in the plating is removed by a chemical mechanical polishing process.

Abstract translation: 在形成三维互连的方法中，在设置在基板上的通孔内形成接触插塞，形成在基板的上侧的上线，下侧形成的下线电连接到一个 另一个由接触塞。 通过将具有至少一种金属盐和金属颗粒的金属成膜组合物涂布到设置有通孔的基板上，在基板的上表面和通孔的内表面上形成涂膜。 通过加热涂膜来形成金属膜，并通过使用金属膜作为种子层的电镀工艺在金属膜上沉积导体来填充通孔而进行镀覆。 通过化学机械抛光工艺除去沉积在电镀中的过量导体。

公开(公告)号：US09809489B2

公开(公告)日：2017-11-07

申请号：US14849960

申请日：2015-09-10

Applicant: JSR Corporation

Inventor： Sugirou Shimoda ,  Kenzou Ookita ,  Keisuke Satou ,  Kazuto Watanabe

IPC: H01B1/02 ,  C03C17/10 ,  H05K1/09 ,  H05K3/18 ,  G06F3/044 ,  G06F3/041 ,  H05K1/03 ,  H05K3/38

CPC classification number: C03C17/10 ,  C03C2217/253 ,  C03C2217/256 ,  C03C2217/27 ,  C03C2218/365 ,  G06F3/041 ,  G06F3/044 ,  G06F2203/04111 ,  H01B1/02 ,  H05K1/0306 ,  H05K1/0386 ,  H05K1/097 ,  H05K3/188 ,  H05K3/38 ,  H05K2203/1157 ,  H05K2203/125

Abstract: A composition for forming a conductive film includes at least one of a metal salt (A1) and a metal particle (A2) as component (A) that serves as a metal source of the conductive film, and a metalloxane compound (B). The metal salt (A1) and the metal particle (A2) contain one or more metals selected from the group consisting of Ni, Pd, Pt, Cu, Ag, and Au. The metalloxane compound (B) has at least one metal atom selected from the group consisting of Ti, Zr, Sn, Si, and Al in its main chain. Preferably, the metal salt (A1) is a carboxylate containing a metal selected from the group consisting of Cu, Ag, and Ni. Preferably, the metal particle (A2) has an average particle diameter of 5 nm to 100 nm and comprises a metal selected from the group consisting of Cu, Ag, and Ni.

公开(公告)号：US20160057866A1

公开(公告)日：2016-02-25

申请号：US14463012

申请日：2014-08-19

Applicant: JSR CORPORATION

Inventor： Sugirou SHIMODA ,  Kenzou Ookita ,  Isao Aritome ,  Kazuto Watanabe ,  Kenrou Tanaka

IPC: H05K3/00 ,  H01L23/48 ,  H01L21/768 ,  H01L27/108 ,  H01L23/532 ,  C08K5/17 ,  H05K1/09 ,  H05K1/02 ,  C09D11/52 ,  C08K5/098 ,  C08K3/22 ,  C08K5/07 ,  H01B13/00 ,  H01L21/288

CPC classification number: C08K5/17 ,  C08K3/22 ,  C08K5/07 ,  C08K5/098 ,  C08K2003/2248 ,  C09D11/037 ,  C09D11/38 ,  C09D11/52 ,  H01L21/288 ,  H01L21/4846 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49883 ,  H01L27/1085 ,  H01L28/60 ,  H01L2924/0002 ,  H05K3/105 ,  H05K3/4076 ,  H05K2201/0195 ,  H05K2201/09509 ,  H05K2201/09545 ,  H01L2924/00

Abstract: An object of the invention is to provide a simple method capable of easily forming a metal film on a surface of a perforated substrate that is adjacent to the hole in the substrate. The metal film forming method includes a step of heating a perforated substrate having a hole while a surface of the substrate adjacent to the hole is in contact with a conductive ink containing a metal salt and a reducing agent.

Abstract translation: 本发明的目的是提供一种能够容易地在与基板中的孔相邻的多孔基板的表面上形成金属膜的简单方法。 金属膜形成方法包括加热具有孔的多孔基材的步骤，同时邻近孔的基板的表面与含有金属盐和还原剂的导电油墨接触。