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公开(公告)号：US11158506B2
公开(公告)日：2021-10-26
申请号：US16852454
申请日：2020-04-18
IPC分类号： H01L21/033 , H01L21/311 , H01L21/027
摘要： A hard mask and a method of creating thereof are provided. A first layer is deposited that is configured to provide at least one of a chemical and a mechanical adhesion to a layer immediately below it. A second layer is deposited having an etch selectivity that is faster than the first layer. A third layer is deposited having an etch selectivity that is slower than the first and second layers. The third layer has a composite strength that is higher than the first and second layers. A photoresist layer is deposited on top of the third layer and chemically removed above an inner opening. The third layer and part of the second layer are anisotropically etched through the inner opening. The second layer and the first layer are isotropically etched to create overhang regions of the third layer.
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公开(公告)号：US20200251336A1
公开(公告)日：2020-08-06
申请号：US16852454
申请日：2020-04-18
IPC分类号： H01L21/033 , H01L21/311 , H01L21/027
摘要： A hard mask and a method of creating thereof are provided. A first layer is deposited that is configured to provide at least one of a chemical and a mechanical adhesion to a layer immediately below it. A second layer is deposited having an etch selectivity that is faster than the first layer. A third layer is deposited having an etch selectivity that is slower than the first and second layers. The third layer has a composite strength that is higher than the first and second layers. A photoresist layer is deposited on top of the third layer and chemically removed above an inner opening. The third layer and part of the second layer are anisotropically etched through the inner opening. The second layer and the first layer are isotropically etched to create overhang regions of the third layer.
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公开(公告)号：US20200006226A1
公开(公告)日：2020-01-02
申请号：US16569997
申请日：2019-09-13
IPC分类号： H01L23/522 , H01L21/768 , H01L23/532
摘要： Techniques for improving reliability in Cu interconnects using Cu intermetallics are provided. In one aspect, a method of forming a Cu interconnect in a dielectric over a Cu line includes the steps of: forming at least one via in the dielectric over the Cu line; depositing a metal layer onto the dielectric and lining the via such that the metal layer is in contact with the Cu line at the bottom of the via, wherein the metal layer comprises at least one metal that can react with Cu to form a Cu intermetallic; annealing the metal layer and the Cu line under conditions sufficient to form a Cu intermetallic barrier at the bottom of the via; and plating Cu into the via to form the Cu interconnect, wherein the Cu interconnect is separated from the Cu line by the Cu intermetallic barrier. A device structure is also provided.
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公开(公告)号：US20190323138A1
公开(公告)日：2019-10-24
申请号：US16442885
申请日：2019-06-17
摘要： Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements.
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5.发明授权公开(公告)号：US09891189B2
公开(公告)日：2018-02-13
申请号：US15477982
申请日：2017-04-03
IPC分类号： G01N27/403 , G01N27/414 , B82B1/00 , B82B3/00 , G01N33/487
CPC分类号： G01N27/4146 , B01L3/502707 , B01L3/502761 , B01L2200/0663 , B01L2300/0861 , B01L2300/0887 , B01L2300/0896 , B81B2201/051 , B81C1/00119 , B81C2201/0181 , B82B1/005 , B82B3/008 , G01N27/4145 , G01N33/48721
摘要： Techniques for fabricating horizontally aligned nanochannels are provided. In one aspect, a method of forming a device having nanochannels is provided. The method includes: providing a SOI wafer having a SOI layer on a buried insulator; forming at least one nanowire and pads in the SOI layer, wherein the nanowire is attached at opposite ends thereof to the pads, and wherein the nanowire is suspended over the buried insulator; forming a mask over the pads, the mask having a gap therein where the nanowire is exposed between the pads; forming an alternating series of metal layers and insulator layers alongside one another within the gap and surrounding the nanowire; and removing the nanowire to form at least one of the nanochannels in the alternating series of the metal layers and insulator layers. A device having nanochannels is also provided.
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6.发明申请公开(公告)号：US20170370876A1
公开(公告)日：2017-12-28
申请号：US15477982
申请日：2017-04-03
IPC分类号： G01N27/414 , B82B1/00 , B82B3/00 , G01N33/487
CPC分类号： G01N27/4146 , B01L3/502707 , B01L3/502761 , B01L2200/0663 , B01L2300/0861 , B01L2300/0887 , B01L2300/0896 , B81B2201/051 , B81C1/00119 , B81C2201/0181 , B82B1/005 , B82B3/008 , G01N27/4145 , G01N33/48721
摘要： Techniques for fabricating horizontally aligned nanochannels are provided. In one aspect, a method of forming a device having nanochannels is provided. The method includes: providing a SOI wafer having a SOI layer on a buried insulator; forming at least one nanowire and pads in the SOI layer, wherein the nanowire is attached at opposite ends thereof to the pads, and wherein the nanowire is suspended over the buried insulator; forming a mask over the pads, the mask having a gap therein where the nanowire is exposed between the pads; forming an alternating series of metal layers and insulator layers alongside one another within the gap and surrounding the nanowire; and removing the nanowire to form at least one of the nanochannels in the alternating series of the metal layers and insulator layers. A device having nanochannels is also provided.
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7.发明申请DNA SEQUENCING USING MULTIPLE METAL LAYER STRUCTURE WITH DIFFERENT ORGANIC COATINGS FORMING DIFFERENT TRANSIENT BONDINGS TO DNA 有权使用多种金属层结构与不同有机涂层形成不同瞬态结合到DNA的DNA序列公开(公告)号：US20150160159A1
公开(公告)日：2015-06-11
申请号：US14624868
申请日：2015-02-18
发明人： Ali Afzali-Ardakani , Stefan Harrer , Binquan Luan , Hongbo Peng , Stephen M. Rossnagel , Ajay K. Royyuru , Gustavo A. Stolovitzky , Philip S. Waggoner
IPC分类号： G01N27/447
CPC分类号： G01N33/48721 , B82Y15/00 , C12Q1/6869 , G01N27/44743 , G01N27/44791 , Y10S977/924 , C12Q2563/157
摘要： A nanodevice includes a reservoir filled with conductive fluid and a membrane separating the reservoir. A nanopore is formed through the membrane having electrode layers separated by insulating layers. A certain electrode layer has a first type of organic coating and a pair of electrode layers has a second type. The first type of organic coating forms a motion control transient bond to a molecule in the nanopore for motion control, and the second type forms first and second transient bonds to different bonding sites of a base of the molecule. When a voltage is applied to the pair of electrode layers a tunneling current is generated by the base in the nanopore, and the tunneling current travels via the first and second transient bonds formed to be measured as a current signature for distinguishing the base. The motion control transient bond is stronger than first and second transient bonds.
摘要翻译： 纳米器件包括填充有导电流体的储存器和分离储存器的膜。 通过具有由绝缘层分隔的电极层的膜形成纳米孔。 某一电极层具有第一类型的有机涂层，并且一对电极层具有第二类型。 第一类型的有机涂层形成运动控制瞬态键合到用于运动控制的纳米孔中的一个分子，而第二种类型形成与分子的基底的不同键合位点的第一和第二瞬态键。 当对一对电极层施加电压时，由纳米孔中的基底产生隧穿电流，并且隧穿电流通过形成为待测量的第一和第二瞬态键作为用于区分基极的电流签名行进。 运动控制瞬态键比第一和第二瞬态键强。
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公开(公告)号：US20140312003A1
公开(公告)日：2014-10-23
申请号：US13971532
申请日：2013-08-20
CPC分类号： G01N33/48721 , C12Q1/6869 , C23C18/161 , C23C18/1644 , C23C18/1675 , C23C18/42 , C25D3/50 , C25D5/02 , C25D7/00 , C25D7/12 , C25D21/12
摘要： A mechanism is provided for forming a nanodevice. A reservoir is filled with a conductive fluid, and a membrane is formed to separate the reservoir in the nanodevice. The membrane includes an electrode layer having a tunneling junction formed therein. The membrane is formed to have a nanopore formed through one or more other layers of the membrane such that the nanopore is aligned with the tunneling junction of the electrode layer. The tunneling junction of the electrode layer is narrowed to a narrowed size by electroplating or electroless deposition. When a voltage is applied to the electrode layer, a tunneling current is generated by a base in the tunneling junction to be measured as a current signature for distinguishing the base. When an organic coating is formed on an inside surface of the tunneling junction, transient bonds are formed between the electrode layer and the base.
摘要翻译： 提供了用于形成纳米器件的机构。 储存器填充有导电流体，并且形成膜以分离纳米装置中的储存器。 膜包括其中形成有隧道结的电极层。 膜形成为具有通过膜的一个或多个其它层形成的纳米孔，使得纳米孔与电极层的隧道结对准。 电极层的隧道结通过电镀或无电沉积而变窄到窄的尺寸。 当向电极层施加电压时，通过在要测量的隧道结中的基底产生隧道电流作为区分基底的当前签名。 当在隧道结的内表面上形成有机涂层时，在电极层和基底之间形成瞬态结合。
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9.发明授权Memory cell with post deposition method for regrowth of crystalline phase change material 有权具有后沉积方法的记忆电池，用于晶体相变材料的再生长公开(公告)号：US08680501B2
公开(公告)日：2014-03-25
申请号：US13736189
申请日：2013-01-08
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1641 , H01L45/1683
摘要： A phase change memory cell with substantially void free crystalline phase change material. An example memory cell includes a substrate and a bottom electrode carried by the substrate. The bottom electrode is a thermal conductor. A phase change layer includes phase change material. The phase change layer is void free within a switching region when the phase change material is in a crystalline phase. A top electrode is positioned over the phase change layer.
摘要翻译： 具有基本上无空隙结晶相变材料的相变记忆体。 示例性存储单元包括由衬底承载的衬底和底电极。 底部电极是导热体。 相变层包括相变材料。 当相变材料处于结晶相时，相变层在开关区域内无空隙。 顶部电极位于相变层上。
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公开(公告)号：US11015258B2
公开(公告)日：2021-05-25
申请号：US16442885
申请日：2019-06-17
摘要： Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements.
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