公开(公告)号：US20240114694A1

公开(公告)日：2024-04-04

申请号：US17937043

申请日：2022-09-30

申请人： Intel Corporation

发明人： Sourav Dutta ,  Nazila Haratipour ,  Uygar E. Avci ,  Vachan Kumar ,  Christopher M. Neumann ,  Shriram Shivaraman ,  Sou-Chi Chang ,  Brian S. Doyle

IPC分类号： H01L27/11507

CPC分类号： H01L27/11507

摘要： Backside integrated circuit capacitor structures. In an example, a capacitor structure includes a layer of ferroelectric material between first and second electrodes. The first electrode can be connected to a transistor terminal by a backside contact that extends downward from a bottom surface of the transistor terminal to the first electrode. The transistor terminal can be, for instance, a source or drain region, and the backside contact can be self-aligned with the source or drain region. The second electrode can be connected to a backside interconnect feature. In some cases, the capacitor has a height that extends through at least one backside interconnect layer. In some cases, the capacitor is a multi-plate capacitor in which the second conductor is one of a plurality of plate line conductors arranged in a staircase structure. The capacitor structure may be, for example, part of a non-volatile memory device or the cache of a processor.

公开(公告)号：US20240114692A1

公开(公告)日：2024-04-04

申请号：US17958395

申请日：2022-10-01

申请人： Intel Corporation

发明人： Nazila Haratipour ,  Uygar E. Avci ,  Vachan Kumar ,  Hai Li ,  Yu-Ching Liao ,  Ian Alexander Young

IPC分类号： H01L27/11502 ,  G11C11/22 ,  H01L27/108 ,  H01L29/94

CPC分类号： H01L27/11502 ,  G11C11/221 ,  G11C11/223 ,  H01L27/1087 ,  H01L29/945

摘要： Inverted pillar capacitors that have a U-shaped insulating layer are oriented with the U-shaped opening of the insulating layer opening toward the surface of the substrate on which the inverted pillar capacitors are formed. The bottom electrodes of adjacent inverted pillar capacitors are isolated from each other by the insulating layers of the adjacent electrodes and the top electrode that fills the volume between the electrodes. By avoiding the need to isolate adjacent bottom electrodes by an isolation dielectric region, inverted pillar capacitors can provide for a greater capacitor density relative to non-inverted pillar capacitors. The insulating layer in inverted pillar capacitors can comprise a ferroelectric material or an antiferroelectric material. The inverted pillar capacitor can be used in memory circuits (e.g., DRAMs) or non-memory applications.

公开(公告)号：US20240113101A1

公开(公告)日：2024-04-04

申请号：US17936990

申请日：2022-09-30

申请人： Intel Corporation

发明人： Sourav Dutta ,  Nazila Haratipour ,  Vachan Kumar ,  Uygar E. Avci ,  Shriram Shivaraman ,  Sou-Chi Chang

IPC分类号： H01L27/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L49/02

CPC分类号： H01L27/0629 ,  H01L28/55 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/778 ,  H01L29/0673

摘要： Techniques are provided herein to form a semiconductor device that has a capacitor structure integrated with the source or drain region of the semiconductor device. A given semiconductor device includes one or more semiconductor regions extending in a first direction between corresponding source or drain regions. A gate structure extends in a second direction over the one or more semiconductor regions. A capacitor structure is integrated with one of the source or drain regions of the integrated circuit such that a first electrode of the capacitor contacts the source or drain region and a second electrode of the capacitor contacts a conductive contact formed over the capacitor structure. The capacitor structure may include a ferroelectric capacitor having a ferroelectric layer between the electrodes.