公开(公告)号：US20160133596A1

公开(公告)日：2016-05-12

申请号：US14997919

申请日：2016-01-18

Applicant: Intel Corporation

Inventor： Qing Ma ,  Jun He ,  Patrick Morrow ,  Paul B. Fischer ,  Sridhar Balakrishnan ,  Satish Radhakrishnan ,  Tatyana Andryushchenko ,  Guanghai Xu

IPC: H01L23/00 ,  H01L21/033

CPC classification number: H01L24/19 ,  B23K1/0016 ,  H01L21/0334 ,  H01L24/11 ,  H01L2224/245 ,  H01L2924/01322 ,  H01L2924/14 ,  H05K3/4015 ,  H05K2201/1028 ,  H01L2924/00

Abstract: The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress.

Abstract translation: 本主题涉及制造微电子器件的领域。 在至少一个实施例中，本主题涉及形成具有其部分的互连，其在附接到外部设备之后在冷却期间从微电子器件脱粘。 脱粘部分允许互连件弯曲并吸收应力。

公开(公告)号：US09984922B2

公开(公告)日：2018-05-29

申请号：US15254840

申请日：2016-09-01

Applicant: Intel Corporation

Inventor： Jun He ,  Kevin J. Fischer ,  Ying Zhou ,  Peter K. Moon

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/76849 ,  H01L21/0217 ,  H01L21/02252 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76888 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.

公开(公告)号：US09461010B2

公开(公告)日：2016-10-04

申请号：US14997919

申请日：2016-01-18

Applicant: Intel Corporation

Inventor： Qing Ma ,  Jun He ,  Patrick Morrow ,  Paul B. Fischer ,  Sridhar Balakrishnan ,  Satish Radhakrishnan ,  Tatyana Andryushchenko ,  Guanghai Xu

IPC: H05K1/03 ,  H01L23/00 ,  B23K1/00 ,  H05K3/40 ,  H01L21/033

CPC classification number: H01L24/19 ,  B23K1/0016 ,  H01L21/0334 ,  H01L24/11 ,  H01L2224/245 ,  H01L2924/01322 ,  H01L2924/14 ,  H05K3/4015 ,  H05K2201/1028 ,  H01L2924/00

Abstract: The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress.

公开(公告)号：US09269686B2

公开(公告)日：2016-02-23

申请号：US14132157

申请日：2013-12-18

Applicant: Intel Corporation

Inventor： Qing Ma ,  Jun He ,  Patrick Morrow ,  Paul B. Fischer ,  Sridhar Balakrishnan ,  Satish Radhakrishnan ,  Tatyana T. Adryushchenko ,  Guanghai Xu

IPC: H05K1/03 ,  H01L23/00 ,  B23K1/00 ,  H05K3/40

CPC classification number: H01L24/19 ,  B23K1/0016 ,  H01L21/0334 ,  H01L24/11 ,  H01L2224/245 ,  H01L2924/01322 ,  H01L2924/14 ,  H05K3/4015 ,  H05K2201/1028 ,  H01L2924/00

Abstract: The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress.

Abstract translation: 本主题涉及制造微电子器件的领域。 在至少一个实施例中，本主题涉及形成具有其部分的互连，其在附接到外部设备之后在冷却期间从微电子器件脱粘。 脱粘部分允许互连件弯曲并吸收应力。

公开(公告)号：US09437545B2

公开(公告)日：2016-09-06

申请号：US14569342

申请日：2014-12-12

Applicant: Intel Corporation

Inventor： Jun He ,  Kevin J. Fischer ,  Ying Zhou ,  Peter K. Moon

IPC: H01L23/52 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/76849 ,  H01L21/0217 ,  H01L21/02252 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76888 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.