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公开(公告)号:US11751404B2
公开(公告)日:2023-09-05
申请号:US16141025
申请日:2018-09-25
Applicant: Intel Corporation
Inventor: Abhishek Sharma , Gregory Chen , Phil Knag , Ram Krishnamurthy , Raghavan Kumar , Sasikanth Manipatruni , Amrita Mathuriya , Huseyin Sumbul , Ian A. Young
CPC classification number: H10B63/30 , H01L29/66795 , H01L29/785 , H10N70/021 , H10N70/826 , H10N70/882 , H10N70/8833
Abstract: Embodiments herein describe techniques for a semiconductor device including a RRAM memory cell. The RRAM memory cell includes a FinFET transistor and a RRAM storage cell. The FinFET transistor includes a fin structure on a substrate, where the fin structure includes a channel region, a source region, and a drain region. An epitaxial layer is around the source region or the drain region. A RRAM storage stack is wrapped around a surface of the epitaxial layer. The RRAM storage stack includes a resistive switching material layer in contact and wrapped around the surface of the epitaxial layer, and a contact electrode in contact and wrapped around a surface of the resistive switching material layer. The epitaxial layer, the resistive switching material layer, and the contact electrode form a RRAM storage cell. Other embodiments may be described and/or claimed.
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公开(公告)号:US11151046B2
公开(公告)日:2021-10-19
申请号:US16921685
申请日:2020-07-06
Applicant: Intel Corporation
Inventor: Amrita Mathuriya , Sasikanth Manipatruni , Victor Lee , Huseyin Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , Ian Young , Abhishek Sharma
Abstract: The present disclosure is directed to systems and methods of implementing a neural network using in-memory mathematical operations performed by pipelined SRAM architecture (PISA) circuitry disposed in on-chip processor memory circuitry. A high-level compiler may be provided to compile data representative of a multi-layer neural network model and one or more neural network data inputs from a first high-level programming language to an intermediate domain-specific language (DSL). A low-level compiler may be provided to compile the representative data from the intermediate DSL to multiple instruction sets in accordance with an instruction set architecture (ISA), such that each of the multiple instruction sets corresponds to a single respective layer of the multi-layer neural network model. Each of the multiple instruction sets may be assigned to a respective SRAM array of the PISA circuitry for in-memory execution. Thus, the systems and methods described herein beneficially leverage the on-chip processor memory circuitry to perform a relatively large number of in-memory vector/tensor calculations in furtherance of neural network processing without burdening the processor circuitry.
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公开(公告)号:US10860682B2
公开(公告)日:2020-12-08
申请号:US16839013
申请日:2020-04-02
Applicant: Intel Corporation
Inventor: Phil Knag , Gregory K. Chen , Raghavan Kumar , Huseyin Ekin Sumbul , Abhishek Sharma , Sasikanth Manipatruni , Amrita Mathuriya , Ram Krishnamurthy , Ian A. Young
IPC: G06F17/16 , G11C11/419 , G11C11/418 , G11C7/12 , G11C8/08 , G06G7/16 , G06G7/22 , G11C11/56 , G06F9/30 , G11C7/10 , G06N3/063
Abstract: A binary CIM circuit enables all memory cells in a memory array to be effectively accessible simultaneously for computation using fixed pulse widths on the wordlines and equal capacitance on the bitlines. The fixed pulse widths and equal capacitance ensure that a minimum voltage drop in the bitline represents one least significant bit (LSB) so that the bitline voltage swing remains safely within the maximum allowable range. The binary CIM circuit maximizes the effective memory bandwidth of a memory array for a given maximum voltage range of bitline voltage.
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公开(公告)号:US20200334161A1
公开(公告)日:2020-10-22
申请号:US16921685
申请日:2020-07-06
Applicant: Intel Corporation
Inventor: Amrita Mathuriya , Sasikanth Manipatruni , Victor Lee , Huseyin Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , IAN YOUNG , Abhishek Sharma
Abstract: The present disclosure is directed to systems and methods of implementing a neural network using in-memory mathematical operations performed by pipelined SRAM architecture (PISA) circuitry disposed in on-chip processor memory circuitry. A high-level compiler may be provided to compile data representative of a multi-layer neural network model and one or more neural network data inputs from a first high-level programming language to an intermediate domain-specific language (DSL). A low-level compiler may be provided to compile the representative data from the intermediate DSL to multiple instruction sets in accordance with an instruction set architecture (ISA), such that each of the multiple instruction sets corresponds to a single respective layer of the multi-layer neural network model. Each of the multiple instruction sets may be assigned to a respective SRAM array of the PISA circuitry for in-memory execution. Thus, the systems and methods described herein beneficially leverage the on-chip processor memory circuitry to perform a relatively large number of in-memory vector/tensor calculations in furtherance of neural network processing without burdening the processor circuitry.
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公开(公告)号:US10565138B2
公开(公告)日:2020-02-18
申请号:US16146534
申请日:2018-09-28
Applicant: Intel Corporation
Inventor: Jack Kavalieros , Ram Krishnamurthy , Sasikanth Manipatruni , Gregory Chen , Van Le , Amrita Mathuriya , Abhishek Sharma , Raghavan Kumar , Phil Knag , Huseyin Sumbul , Ian Young
IPC: G11C8/00 , G06F13/16 , H01L25/18 , H03K19/21 , G11C11/408 , H01L23/522 , G11C11/419
Abstract: Techniques and mechanisms for providing data to be used in an in-memory computation at a memory device. In an embodiment a memory device comprises a first memory array and circuitry, coupled to the first memory array, to perform a data computation based on data stored at the first memory array. Prior to the computation, the first memory array receives the data from a second memory array of the memory device. The second memory array extends horizontally in parallel with, but is offset vertically from, the first memory array. In another embodiment, a single integrated circuit die includes both the first memory array and the second memory array.
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公开(公告)号:US11502696B2
公开(公告)日:2022-11-15
申请号:US16160800
申请日:2018-10-15
Applicant: Intel Corporation
Inventor: Amrita Mathuriya , Sasikanth Manipatruni , Victor Lee , Huseyin Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , Ian Young , Abhishek Sharma
Abstract: Embodiments are directed to systems and methods of implementing an analog neural network using a pipelined SRAM architecture (“PISA”) circuitry disposed in on-chip processor memory circuitry. The on-chip processor memory circuitry may include processor last level cache (LLC) circuitry. One or more physical parameters, such as a stored charge or voltage, may be used to permit the generation of an in-memory analog output using a SRAM array. The generation of an in-memory analog output using only word-line and bit-line capabilities beneficially increases the computational density of the PISA circuit without increasing power requirements. Thus, the systems and methods described herein beneficially leverage the existing capabilities of on-chip SRAM processor memory circuitry to perform a relatively large number of analog vector/tensor calculations associated with execution of a neural network, such as a recurrent neural network, without burdening the processor circuitry and without significant impact to the processor power requirements.
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公开(公告)号:US11048434B2
公开(公告)日:2021-06-29
申请号:US16147024
申请日:2018-09-28
Applicant: Intel Corporation
Inventor: Raghavan Kumar , Phil Knag , Gregory K. Chen , Huseyin Ekin Sumbul , Sasikanth Manipatruni , Amrita Mathuriya , Abhishek Sharma , Ram Krishnamurthy , Ian A. Young
IPC: G11C11/419 , G06F3/06 , G04F10/00 , G11C13/00 , G11C11/418 , G11C7/10 , G11C11/54
Abstract: A memory circuit has compute-in-memory (CIM) circuitry that performs computations based on time-to-digital conversion (TDC). The memory circuit includes an array of memory cells addressable with column address and row address. The memory circuit includes CIM sense circuitry to sense a voltage for multiple memory cells triggered together. The CIM sense circuitry including a TDC circuit to convert a time for discharge of the multiple memory cells to a digital value. A processing circuit determines a value of the multiple memory cells based on the digital value.
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8.
公开(公告)号:US10956813B2
公开(公告)日:2021-03-23
申请号:US16147109
申请日:2018-09-28
Applicant: Intel Corporation
Inventor: Ian A. Young , Ram Krishnamurthy , Sasikanth Manipatruni , Gregory K. Chen , Amrita Mathuriya , Abhishek Sharma , Raghavan Kumar , Phil Knag , Huseyin Ekin Sumbul
IPC: G06N3/06 , G06N3/063 , G11C11/419 , G11C5/06 , H03M7/30 , G11C11/413 , G11C7/10 , G11C11/54 , G06N3/04
Abstract: An apparatus is described. The apparatus includes a compute in memory circuit. The compute in memory circuit includes a memory circuit and an encoder. The memory circuit is to provide 2m voltage levels on a read data line where m is greater than 1. The memory circuit includes storage cells sufficient to store a number of bits n where n is greater than m. The encoder is to receive an m bit input and convert the m bit input into an n bit word that is to be stored in the memory circuit, where, the m bit to n bit encoding performed by the encoder creates greater separation between those of the voltage levels that demonstrate wider voltage distributions on the read data line than others of the voltage levels.
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公开(公告)号:US20190102359A1
公开(公告)日:2019-04-04
申请号:US16147036
申请日:2018-09-28
Applicant: Intel Corporation
Inventor: Phil KNAG , Gregory K. CHEN , Raghavan KUMAR , Huseyin Ekin SUMBUL , Abhishek Sharma , Sasikanth Manipatruni , Amrita Mathuriya , Ram A. Krishnamurthy , Ian A. Young
IPC: G06F17/16 , G11C11/419 , G11C11/418 , G11C7/10 , G06F9/30 , G11C11/56
Abstract: A binary CIM circuit enables all memory cells in a memory array to be effectively accessible simultaneously for computation using fixed pulse widths on the wordlines and equal capacitance on the bitlines. The fixed pulse widths and equal capacitance ensure that a minimum voltage drop in the bitline represents one least significant bit (LSB) so that the bitline voltage swing remains safely within the maximum allowable range. The binary CIM circuit maximizes the effective memory bandwidth of a memory array for a given maximum voltage range of bitline voltage.
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公开(公告)号:US11138499B2
公开(公告)日:2021-10-05
申请号:US16147176
申请日:2018-09-28
Applicant: Intel Corporation
Inventor: Abhishek Sharma , Jack T. Kavalieros , Ian A. Young , Sasikanth Manipatruni , Ram Krishnamurthy , Uygar Avci , Gregory K. Chen , Amrita Mathuriya , Raghavan Kumar , Phil Knag , Huseyin Ekin Sumbul , Nazila Haratipour , Van H. Le
IPC: G06N3/063 , H01L27/108 , H01L27/11502 , G06N3/04 , G06F17/16 , H01L27/11 , G11C11/54 , G11C7/10 , G11C11/419 , G11C11/409 , G11C11/22
Abstract: An apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit for implementing a neural network disposed on a semiconductor chip. The CIM circuit includes a mathematical computation circuit coupled to a memory array. The memory array includes an embedded dynamic random access memory (eDRAM) memory array. Another apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit for implementing a neural network disposed on a semiconductor chip. The CIM circuit includes a mathematical computation circuit coupled to a memory array. The mathematical computation circuit includes a switched capacitor circuit. The switched capacitor circuit includes a back-end-of-line (BEOL) capacitor coupled to a thin film transistor within the metal/dielectric layers of the semiconductor chip. Another apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit for implementing a neural network disposed on a semiconductor chip. The CIM circuit includes a mathematical computation circuit coupled to a memory array. The mathematical computation circuit includes an accumulation circuit. The accumulation circuit includes a ferroelectric BEOL capacitor to store a value to be accumulated with other values stored by other ferroelectric BEOL capacitors.
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