公开(公告)号：US10861964B2

公开(公告)日：2020-12-08

申请号：US16171605

申请日：2018-10-26

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Rudolf Elpelt ,  Reinhold Schoerner ,  Larissa Wehrhahn-Kilian ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L29/861 ,  H01L29/10 ,  H01L21/308 ,  H01L21/04 ,  H01L29/417 ,  H01L29/739 ,  H01L29/808

Abstract: A semiconductor device includes a drift zone formed in a semiconductor portion. In a transition section of the semiconductor portion a vertical extension of the semiconductor portion decreases from a first vertical extension to a second vertical extension. A junction termination zone of a conductivity type complementary to a conductivity type of the drift zone is formed between a first surface of the semiconductor portion and the drift zone and includes a tapering portion in the transition section. In the tapering portion a vertical extension of the junction termination zone decreases from a maximum vertical extension to zero within a lateral width of at least twice the maximum vertical extension.

公开(公告)号：US20200066857A1

公开(公告)日：2020-02-27

申请号：US16550146

申请日：2019-08-23

Applicant: Infineon Technologies AG

Inventor： Jens Peter Konrath ,  Caspar Leendertz ,  Larissa Wehrhahn-Kilian

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/16 ,  H01L29/47 ,  H01L29/739 ,  H01L21/04 ,  H01L21/02

Abstract: An embodiment of a semiconductor device comprises a SiC semiconductor body, a gate dielectric and a gate electrode. A first trench extends from a first surface of the SiC semiconductor body into the SiC semiconductor body. A junction material is in the first trench, wherein the junction material and the SiC semiconductor body form a diode.

公开(公告)号：US20190296143A1

公开(公告)日：2019-09-26

申请号：US16361888

申请日：2019-03-22

Applicant: Infineon Technologies AG

Inventor： Larissa Wehrhahn-Kilian ,  Reinhold Schoerner

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/10 ,  H01L29/06

Abstract: A drift structure having a drift zone of a first conductivity type is formed in a SiC semiconductor body of a semiconductor component. Transistor cells each include a doping region and a source region in the SiC semiconductor body. The doping region forms a first pn junction with the drift structure and a second pn junction with the source region. The doping region is electrically connected to a first load electrode. A diode region is formed between the transistor cells and a side surface of the SiC semiconductor body. The diode region is electrically connected to the first load electrode and forms a third pn junction with the drift structure. An emitter efficiency of the diode region is higher than an emitter efficiency of the doping region.

公开(公告)号：US20190131446A1

公开(公告)日：2019-05-02

申请号：US16171605

申请日：2018-10-26

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Rudolf Elpelt ,  Reinhold Schoerner ,  Larissa Wehrhahn-Kilian ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/861 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/66 ,  H01L21/04 ,  H01L21/308

Abstract: A semiconductor device includes a drift zone formed in a semiconductor portion. In a transition section of the semiconductor portion a vertical extension of the semiconductor portion decreases from a first vertical extension to a second vertical extension. A junction termination zone of a conductivity type complementary to a conductivity type of the drift zone is formed between a first surface of the semiconductor portion and the drift zone and includes a tapering portion in the transition section. In the tapering portion a vertical extension of the junction termination zone decreases from a maximum vertical extension to zero within a lateral width of at least twice the maximum vertical extension.

公开(公告)号：US11380756B2

公开(公告)日：2022-07-05

申请号：US16733329

申请日：2020-01-03

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Rudolf Elpelt ,  Romain Esteve ,  Thomas Ganner ,  Jens Peter Konrath ,  Larissa Wehrhahn-Kilian

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47

Abstract: A silicon carbide device includes a silicon carbide body including a source region of a first conductivity type, a cathode region of the first conductivity type and separation regions of a second conductivity type. A stripe-shaped gate structure extends along a first direction and adjoins the source region and the separation regions. The silicon carbide device includes a first load electrode. Along the first direction, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region. The source region and the first load electrode form an ohmic contact. The first load electrode and the cathode region form a Schottky contact.

公开(公告)号：US20190165159A1

公开(公告)日：2019-05-30

申请号：US16197151

申请日：2018-11-20

Applicant: Infineon Technologies AG

Inventor： Larissa Wehrhahn-Kilian ,  Rudolf Elpelt ,  Roland Rupp ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/16 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417

Abstract: A semiconductor component includes a SiC semiconductor body having an active region and an edge termination structure at least partly surrounding the active region. A drift zone of a first conductivity type is formed in the SiC semiconductor body. The edge termination structure includes: a first doped region of a second conductivity type between a first surface of the SiC semiconductor body and the drift zone, the first doped region at least partly surrounding the active region and being spaced apart from the first surface; a plurality of second doped regions of the second conductivity type between the first surface and the first doped region; and third doped regions of the first conductivity type separating adjacent second doped regions of the plurality of second doped regions from one another in a lateral direction.

公开(公告)号：US20190131447A1

公开(公告)日：2019-05-02

申请号：US16171911

申请日：2018-10-26

Applicant: Infineon Technologies AG

Inventor： Rudolf Elpelt ,  Roland Rupp ,  Reinhold Schoerner ,  Larissa Wehrhahn-Kilian ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/10 ,  H01L21/04 ,  H01L29/861 ,  H01L29/66 ,  H01L29/06

Abstract: In termination regions of a silicon carbide substrate field zones are formed by ion implantation. By laterally modulating a distribution of dopants entering the silicon carbide substrate by the ion implantation, a horizontal net dopant distribution in the field zones is set to fall from a maximum net dopant concentration Nmax to Nmax/e within at least 200 nm, with e representing Euler's number. The field zones form first pn junctions with a drift layer.

公开(公告)号：US11322596B2

公开(公告)日：2022-05-03

申请号：US16550146

申请日：2019-08-23

Applicant: Infineon Technologies AG

Inventor： Jens Peter Konrath ,  Caspar Leendertz ,  Larissa Wehrhahn-Kilian

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/16 ,  H01L21/02 ,  H01L29/739 ,  H01L21/04 ,  H01L29/47

Abstract: An embodiment of a semiconductor device comprises a SiC semiconductor body, a gate dielectric and a gate electrode. A first trench extends from a first surface of the SiC semiconductor body into the SiC semiconductor body. A junction material is in the first trench, wherein the junction material and the SiC semiconductor body form a diode.

公开(公告)号：US11177380B2

公开(公告)日：2021-11-16

申请号：US16361888

申请日：2019-03-22

Applicant: Infineon Technologies AG

Inventor： Larissa Wehrhahn-Kilian ,  Reinhold Schoerner

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L27/06 ,  H01L29/739 ,  H01L29/04

Abstract: A drift structure having a drift zone of a first conductivity type is formed in a SiC semiconductor body of a semiconductor component. Transistor cells each include a doping region and a source region in the SiC semiconductor body. The doping region forms a first pn junction with the drift structure and a second pn junction with the source region. The doping region is electrically connected to a first load electrode. A diode region is formed between the transistor cells and a side surface of the SiC semiconductor body. The diode region is electrically connected to the first load electrode and forms a third pn junction with the drift structure. An emitter efficiency of the diode region is higher than an emitter efficiency of the doping region.

公开(公告)号：US11145755B2

公开(公告)日：2021-10-12

申请号：US16197151

申请日：2018-11-20

Applicant: Infineon Technologies AG

Inventor： Larissa Wehrhahn-Kilian ,  Rudolf Elpelt ,  Roland Rupp ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/16 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L29/861 ,  H01L29/739 ,  H01L21/04 ,  H01L29/66

Abstract: A semiconductor component includes a SiC semiconductor body having an active region and an edge termination structure at least partly surrounding the active region. A drift zone of a first conductivity type is formed in the SiC semiconductor body. The edge termination structure includes: a first doped region of a second conductivity type between a first surface of the SiC semiconductor body and the drift zone, the first doped region at least partly surrounding the active region and being spaced apart from the first surface; a plurality of second doped regions of the second conductivity type between the first surface and the first doped region; and third doped regions of the first conductivity type separating adjacent second doped regions of the plurality of second doped regions from one another in a lateral direction.