Semiconductor devices including parallel electrically conductive layers

    公开(公告)号:US12237246B2

    公开(公告)日:2025-02-25

    申请号:US17196652

    申请日:2021-03-09

    Abstract: A semiconductor device is disclosed. In one example, the semiconductor device includes a semiconductor chip including a first chip contact pad on a first chip main surface. The semiconductor device further includes a first electrically conductive layer arranged over the first chip main surface and electrically coupled to the first chip contact pad, wherein the first electrically conductive layer extends in a direction parallel to the first chip main surface. An electrical through connection is electrically coupled to the first electrically conductive layer and to a second electrically conductive layer, wherein the electrical through connection extends in a direction perpendicular to the first chip main surface, and wherein, in a top view of the first chip main surface, the electrical through connection and the semiconductor chip are non-overlapping.

    SEMICONDUCTOR PACKAGE HAVING A LEAD FRAME AND A CLIP FRAME

    公开(公告)号:US20210166998A1

    公开(公告)日:2021-06-03

    申请号:US17176576

    申请日:2021-02-16

    Abstract: A molded semiconductor package includes a lead frame having one or more first leads monolithically formed with a die pad and extending outward from the pad in a first direction. A semiconductor die is attached to the die pad at a first side of the die. A metal clip of a clip frame is attached to a power terminal at a second side of the die. One or more second leads monolithically formed with the metal clip extend outward from the clip in a second direction different than the first direction. A mold compound embeds the die. The first lead(s) and the second lead(s) are exposed at different sides of the mold compound and do not vertically overlap with one another. Within the mold compound, the clip transitions from a first level above the power terminal to a second level in a same plane as the leads.

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