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公开(公告)号：US10580928B2
公开(公告)日：2020-03-03
申请号：US15671573
申请日：2017-08-08
发明人： Oki Gunawan , Homare Hiroi , Jeehwan Kim , David B. Mitzi , Hiroki Sugimoto
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0216 , H01L31/0445
摘要： A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.
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公开(公告)号：US20170358702A1
公开(公告)日：2017-12-14
申请号：US15671573
申请日：2017-08-08
发明人： Oki Gunawan , Homare Hiroi , Jeehwan Kim , David B. Mitzi , Hiroki Sugimoto
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0216 , H01L31/0445
摘要： A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.
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3.发明申请公开(公告)号：US20160204304A1
公开(公告)日：2016-07-14
申请号：US14596830
申请日：2015-01-14
发明人： Oki Gunawan , Homare Hiroi , Jeehwan Kim , David B. Mitzi , Hiroki Sugimoto
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/0445 , H01L31/0224
CPC分类号： H01L31/1896 , H01L31/02168 , H01L31/022425 , H01L31/022441 , H01L31/022475 , H01L31/0445 , H01L31/1864 , H01L33/0079 , Y02E10/50 , Y02P70/521
摘要： A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.
摘要翻译： 热剥离的方法包括在基材上提供目标层以形成结构。 应力层沉积在目标层上。 将该结构放置在温度受控的环境中以在目标层和基底之间引起不同的热膨胀。 当实现临界温度使目标层与基板分离以产生独立的薄膜装置时，目标层从基板剥离。
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公开(公告)号：US11183611B2
公开(公告)日：2021-11-23
申请号：US16702025
申请日：2019-12-03
发明人： Oki Gunawan , Homare Hiroi , Jeehwan Kim , David B. Mitzi , Hiroki Sugimoto
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0216 , H01L31/0445 , H01L27/12 , H01L33/00
摘要： A photovoltaic device includes an absorber layer having a back contact formed on the absorber layer, the back contact having an exposed surface free from a substrate. It further includes a top contact formed in contact with a transparent conductive layer opposite the back contact and a stressor layer forming a superstrate on the absorber layer opposite the back contact.
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公开(公告)号：US09799792B2
公开(公告)日：2017-10-24
申请号：US14596830
申请日：2015-01-14
发明人： Oki Gunawan , Homare Hiroi , Jeehwan Kim , David B. Mitzi , Hiroki Sugimoto
IPC分类号： H01L31/00 , H01L31/18 , H01L31/0224 , H01L31/0216 , H01L31/0445
CPC分类号： H01L31/1896 , H01L31/02168 , H01L31/022425 , H01L31/022441 , H01L31/022475 , H01L31/0445 , H01L31/1864 , H01L33/0079 , Y02E10/50 , Y02P70/521
摘要： A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.
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公开(公告)号：US11908963B2
公开(公告)日：2024-02-20
申请号：US13900588
申请日：2013-05-23
发明人： Wanda Andreoni , Alessandro Curioni , Petr Khomyakov , Jeehwan Kim , Devendra K. Sadana , Nasser D. Afify
IPC分类号： H01L31/0376 , H01L31/0216
CPC分类号： H01L31/0376 , H01L31/02165 , H01L31/02168 , Y02E10/52
摘要： Photovoltaic device with band-stop filter. The photovoltaic device includes an amorphous photovoltaic material and a band-stop filter structure having a stopband extending from a lower limiting angular frequency ωmin≥0 to an upper limiting angular frequency ωmax where ωmax>ωmin. The band-stop filter structure is arranged in the photovoltaic device relative to the photovoltaic material in order to attenuate electromagnetic radiations reaching the photovoltaic material with angular frequencies of ω* in the stopband, so that ωmin
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公开(公告)号：US11527669B2
公开(公告)日：2022-12-13
申请号：US15976331
申请日：2018-05-10
IPC分类号： H01L31/0749 , H01L31/18 , H01L31/0216 , H01L31/032 , H01L31/072
摘要： A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.
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公开(公告)号：US11355661B2
公开(公告)日：2022-06-07
申请号：US16595959
申请日：2019-10-08
发明人： Tayfun Gokmen , Oki Gunawan , Richard A. Haight , Jeehwan Kim , David B. Mitzi , Mark T. Winkler
IPC分类号： H01L31/075 , H01L31/032 , H01L31/0328 , H01L31/077 , H01L31/18
摘要： A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.
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9.发明申请公开(公告)号：US20210249410A1
公开(公告)日：2021-08-12
申请号：US17245634
申请日：2021-04-30
发明人： Kangguo Cheng , Jeehwan Kim
IPC分类号： H01L27/088 , H01L29/66 , H01L21/308 , H01L21/306 , H01L21/02 , H01L29/78 , H01L29/10 , H01L21/8234 , H01L29/201
摘要： A semiconductor device that includes a fin structure of a type III-V semiconductor material that is substantially free of defects, and has sidewalls that are substantially free of roughness caused by epitaxially growing the type III-V semiconductor material abutting a dielectric material. The semiconductor device further includes a gate structure present on a channel portion of the fin structure; and a source region and a drain region present on opposing sides of the gate structure.
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公开(公告)号：US11069832B2
公开(公告)日：2021-07-20
申请号：US16677806
申请日：2019-11-08
发明人： Jeehwan Kim , Ning Li , Devendra K. Sadana
IPC分类号： H01L33/10 , H01L31/0232 , H01L31/0304 , H01L31/0352 , H01L31/105 , H01L31/18 , H01L33/12 , H01L33/00 , H01L33/30
摘要： An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer.
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