Large channel interconnects with through silicon Vias (TSVs) and method for constructing the same

    公开(公告)号:US11127715B2

    公开(公告)日:2021-09-21

    申请号:US16238803

    申请日:2019-01-03

    Abstract: An electrical device that includes at least two active wafers having at least one through silicon via, and at least one unitary electrical communication and spacer structure present between a set of adjacently stacked active wafers of the at least two active wafers. The unitary electrical communication and spacer structure including an electrically conductive material core providing electrical communication to the at least one through silicon via structure in the set of adjacently stacked active wafers and a substrate material outer layer. The at least one unitary electrical communication and spacer structure being separate from and engaged to the adjacently stacked active wafers, wherein coolant passages are defined between surfaces of the adjacently stacked active wafers and the at least one unitary electrical communication and spacer structure.

    Handler bonding and debonding for semiconductor dies

    公开(公告)号:US10679887B2

    公开(公告)日:2020-06-09

    申请号:US15935537

    申请日:2018-03-26

    Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

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