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公开(公告)号：US11011375B1
公开(公告)日：2021-05-18
申请号：US16684581
申请日：2019-11-14
发明人： Aakash Pushp
IPC分类号： H01L21/02 , H01L21/033 , H01L21/285 , H01L21/308
摘要： A hybrid template assisted selective epitaxy (HTASE) process is described comprising the steps of: depositing a template oxide layer on top of a silicon fin; opening a via in a selected portion of the template oxide to expose a portion of the encapsulated silicon fin and subsequently growing a nitride superconductor layer on top of the exposed silicon fin thereby forming a hybrid encapsulation of the silicon fin; performing a back-etch of the silicon fin to remove a portion (e.g., 5 nm-20 um) of the silicon fin; growing a layer formed from a group III/group V compound within an area where the silicon fin was removed via the back-etch; and if needed, removing the template oxide layer.
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公开(公告)号：US10770649B1
公开(公告)日：2020-09-08
申请号：US16281642
申请日：2019-02-21
发明人： Aakash Pushp
摘要： A device comprising a first magnetic layer (e.g., Co2MnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as Mn3Ga, Mn3Ge, etc.) and a second magnetic layer (e.g., Co2MnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as Mn3Ga, Mn3Ge, etc.), and a metal halide tunnel barrier in between the first and second magnetic layers, wherein the metal halide tunnel barrier (e.g., NaF, NaCl, NaBr, LiF, LiCl, and LiBr or their combination) is lattice matched within a predetermined limit (e.g. 5%) of both the first and second magnetic layers.
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公开(公告)号：US11177549B2
公开(公告)日：2021-11-16
申请号：US16676278
申请日：2019-11-06
发明人： Aakash Pushp , Benjamin Madon , M A Mueed
摘要： A titanium (Ti) seed layer is formed from a Ti source directly on a surface of a substrate, where the surface is substantially free of oxide and nitride, and a reactive nitrogen species is introduced from a nitrogen plasma source and additional Ti is introduced from the Ti source, wherein the nitrogen plasma: (a) reacts with the Ti seed layer to form TiN and (b) reacts with the additional Ti to form additional TiN. The TiN and additional TiN collectively form a TiN superconducting layer that directly contacts the surface of the substrate.
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公开(公告)号：US20200035296A1
公开(公告)日：2020-01-30
申请号：US16043254
申请日：2018-07-24
发明人： Heike E. Riel , Aakash Pushp
摘要： A device comprising a control unit and a plurality of resistive cells. The plurality of resistive cells each comprises a first terminal, a second terminal and a polymorphic layer comprising a polymorphic material. The polymorphic layer is configured to form a tunnel barrier. The polymorphic layer is arranged between the first terminal and the second terminal. The first terminal, the second terminal and the polymorphic layer form a tunnel junction.
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公开(公告)号：US11646143B2
公开(公告)日：2023-05-09
申请号：US16418753
申请日：2019-05-21
发明人： Aakash Pushp
CPC分类号： H01F10/3259 , G11C11/161 , H01F10/3286 , H01F41/32 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12
摘要： Various devices are described (along with methods for making them), where the device has a tunnel barrier sandwiched between two magnetic layers (one of the magnetic layers functioning as a free layer and the other of the magnetic layers functioning as a reference layer). One magnetic layer underlies the tunnel barrier and the other magnetic layer overlies the tunnel barrier, thereby permitting spin-polarized current to pass across the magnetic layers and through the tunnel barrier. At least one of the magnetic layers includes a metal oxide sublayer (e.g., an MgO sublayer) sandwiched between magnetic material.
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公开(公告)号：US10573381B2
公开(公告)日：2020-02-25
申请号：US16043254
申请日：2018-07-24
发明人： Heike E. Riel , Aakash Pushp
摘要： A device comprising a control unit and a plurality of resistive cells. The plurality of resistive cells each comprises a first terminal, a second terminal and a polymorphic layer comprising a polymorphic material. The polymorphic layer is configured to form a tunnel barrier. The polymorphic layer is arranged between the first terminal and the second terminal. The first terminal, the second terminal and the polymorphic layer form a tunnel junction.
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7.发明申请DOMAIN WALL INJECTOR DEVICE USING FRINGING FIELDS AIDED BY SPIN TRANSFER TORQUE 有权使用由转子扭矩引起的边缘的域壁注射器装置公开(公告)号：US20160056368A1
公开(公告)日：2016-02-25
申请号：US14466904
申请日：2014-08-22
发明人： STUART P. PARKIN , Timothy Phung , Aakash Pushp
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1675 , G11C19/0841 , G11C19/0875
摘要： A domain wall injector device uses electrical current passed across an interface between two magnetic regions whose magnetizations are aligned non-collinearly to create a domain wall or a series of domain walls in one of the magnetic regions. The method relies on a combination of innate fringing fields from the magnetic regions and the spin-transfer torque derived from the charge current. The device may be used to store data that are subsequently read out.
摘要翻译： 畴壁注射器装置使用通过两个磁性区域之间的界面的电流，其磁化非对称排列以在一个磁性区域中产生畴壁或一系列畴壁。 该方法依赖于来自磁性区域的固有边缘场和从充电电流导出的自旋传递扭矩的组合。 该设备可用于存储随后读出的数据。
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公开(公告)号：US11688601B2
公开(公告)日：2023-06-27
申请号：US17106287
申请日：2020-11-30
发明人： Aakash Pushp
IPC分类号： H01L21/02 , H01L21/324
CPC分类号： H01L21/02172 , H01L21/02271 , H01L21/324
摘要： A method of forming a composite crystalline nitride structure is provided. The method includes depositing a first crystalline nitride layer on a substrate, patterning the first crystalline nitride layer to form a patterned crystalline nitride layer having a top surface and that includes undulations, annealing the patterned crystalline nitride layer at a temperature between 300° C. to 850° C. to form an annealed patterned crystalline nitride layer, and depositing a second crystalline nitride layer on the annealed patterned crystalline nitride layer. The second crystalline nitride layer is lattice-matched to the underlying annealed patterned crystalline nitride layer to within 2%, thereby forming the composite crystalline nitride structure.
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公开(公告)号：US20230137983A1
公开(公告)日：2023-05-04
申请号：US17452702
申请日：2021-10-28
申请人： International Business Machines Corporation , École Supérieure de Physique et de Chimie Industrielles
发明人： Aakash Pushp , M A Mueed , Benjamin Madon , Noel Arellano , Krystelle Lionti , Gregory Michael Wallraff , Anthony Bock Fong , Brian Peter Hughes , Vincent Ouazan-Reboul
IPC分类号： H01L21/311 , H01L21/027 , H01L21/033 , G03F7/20
摘要： Forming a hardmask layer for reactive ion etching includes depositing a hardmask above an underlayer. The hardmask includes a layer of magnesium oxide having a thickness of up to 10 nm. A resist layer is deposited above the hardmask and developed to form a pattern that exposes portions of the hardmask. The pattern is transferred from the resist layer to the hardmask by rinsing exposed portions of the hardmask with a deionized water solution.
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10.发明授权公开(公告)号：US11386320B2
公开(公告)日：2022-07-12
申请号：US16294598
申请日：2019-03-06
发明人： Aakash Pushp , Pritish Narayanan
摘要： A magnetic double tunnel junction (MDTJ) (which, preferably, has a large aspect ratio, wherein length L of the MDTJ>>width w of the MDTJ) has magnetic domain wall(s) or DW(s) in the free layer of the MDTJ, wherein controlled movement of the DW(s) across the free layer is effected in response to the polarity, magnitude, and duration of a voltage pulse across the MDTJ. The motion and relative position of DW(s) causes the conductance of the MDTJ (that is measured across the MDTJ) to change in a symmetric and linear fashion. By reversing the polarity of the bias voltage, the creation and/or direction of the DW(s) motion can be reversed, thereby allowing for a bi-directional response to the input pulse.
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