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    Sample observation device and sample observation method
    1.
    发明授权
    Sample observation device and sample observation method 有权

    公开(公告)号：US10559074B2

    公开(公告)日：2020-02-11

    申请号：US15898366

    申请日：2018-02-16

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Minoru Harada ,  Yuji Takagi ,  Naoaki Kondo ,  Takehiro Hirai

    IPC: G06T5/50 ,  G06T5/00 ,  G06T7/00 ,  H01J37/22 ,  H01J37/20 ,  H01J37/28

    Abstract: A sample observation device images a sample placed on a movable table by irradiating and scanning the sample with a charged particle beam of a microscope. A degraded image having poor image quality and a high quality image having satisfactory image quality which are acquired at the same location of the sample by causing the charged particle microscope to change an imaging condition for imaging the sample are stored. An estimation process parameter is calculated for estimating the high quality image from the degraded image by using the stored degraded image and high quality image. A high quality image estimation unit processes the degraded image obtained by causing the charged particle microscope to image the desired site of the sample by using the calculated estimation process parameter. Thereby, the high quality image obtained at the desired site is estimated, and then the estimated high quality image is output.

    Defect reviewing method and device
    2.
    发明授权
    Defect reviewing method and device 有权

    公开(公告)号：US10436576B2

    公开(公告)日：2019-10-08

    申请号：US15126391

    申请日：2015-03-19

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Yohei Minekawa ,  Yuko Otani ,  Yuji Takagi

    IPC: G01B11/14 ,  G02B21/36 ,  G02B21/10 ,  G02B21/00 ,  G01N23/2251 ,  G01N23/2204 ,  G01B11/30 ,  G01N21/956 ,  G01N21/95 ,  G02B5/30 ,  G01N21/88

    Abstract: To review minute defects that were buried in roughness scattered light with an observation device provided with a dark-field microscope, a scanning electron microscope (SEM), and a control unit, the present invention configures the dark-field microscope by installing a filter for blocking a portion of the scattered light, an imaging lens for focusing the scattered light that has passed through the filter, and a detector for dividing the image of the scattered light focused by the imaging lens into the polarization directions converted by a wavelength plate and detecting the resulting images, and the control has a calculation unit for determining the position of a defect candidate detected by another inspection device using the plurality of images separated into polarization directions and detected by the detector.

    Overlay measurement method, device, and display device
    3.
    发明授权
    Overlay measurement method, device, and display device 有权

    公开(公告)号：US10094658B2

    公开(公告)日：2018-10-09

    申请号：US15329519

    申请日：2015-08-03

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Yuji Takagi ,  Fumihiko Fukunaga ,  Yasunori Goto

    IPC: G06K9/00 ,  G01B15/04 ,  G06K9/20

    Abstract: To address the problem in which when measuring the overlay of patterns formed on upper and lower layers of a semiconductor pattern by comparing a reference image and measurement image obtained through imaging by an SEM, the contrast of the SEM image of the pattern of the lower layer is low relative to that of the SEM image of the pattern of the upper layer and alignment state verification is difficult even if the reference image and measurement image are superposed on the basis of measurement results, the present invention determines the amount of positional displacement of patterns of an object of overlay measurement from a reference image and measurement image obtained through imaging by an SEM, carries out differential processing on the reference image and measurement image, aligns the reference image and measurement image that have been subjected to differential processing on the basis of the positional displacement amount determined previously, expresses the gradation values of the aligned differential reference image and differential measurement image as brightnesses of colors that differ for each image, superposes the images, and displays the superposed images along with the determined positional displacement amount.

    Defect inspection method and defect inspection device
    7.
    发明授权
    Defect inspection method and defect inspection device 有权

    公开(公告)号：US09922414B2

    公开(公告)日：2018-03-20

    申请号：US14773319

    申请日：2014-01-27

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Yuji Takagi ,  Minoru Harada ,  Masashi Sakamoto ,  Takehiro Hirai

    IPC: G06T7/00 ,  H01L21/66 ,  G06K9/62

    CPC classification number: G06T7/001 ,  G06K9/6202 ,  G06K9/6284 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J2237/2817 ,  H01L22/12

    Abstract: In order to reduce the amount of time it takes to collect images of defects, this defect inspection device is provided with the following: a read-out unit that reads out positions of defects in a semiconductor wafer that have already been detected; a first imaging unit that takes, at a first magnification, a reference image of a chip other than the chip where one of the read-out defects is; a second imaging unit that takes, at the first magnification, a first defect image that contains the read-out defect; a defect-position identification unit that identifies the position of the defect in the first defect image taken by the second imaging unit by comparing said first defect image with the reference image taken by the first imaging unit; a third imaging unit that, on the basis of the identified defect position, takes a second defect image at a second magnification that is higher than the first magnification; a rearrangement unit that rearranges the read-out defects in an order corresponding to a path that goes through each of the read-out defects exactly once; and a stage-movement-path generation unit that selects the chip where the reference image corresponding to each defect is to be taken and generates a stage-movement path by determining stage-movement positions for the first and second imaging units.

    METHOD FOR MEASURING OVERLAY AND MEASURING APPARATUS, SCANNING ELECTRON MICROSCOPE, AND GUI
    8.
    发明申请
    METHOD FOR MEASURING OVERLAY AND MEASURING APPARATUS, SCANNING ELECTRON MICROSCOPE, AND GUI 有权
    测量覆盖和测量设备的方法，扫描电子显微镜和GUI

    公开(公告)号：US20140375793A1

    公开(公告)日：2014-12-25

    申请号：US14370727

    申请日：2013-02-06

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Minoru Harada ,  Ryo Nakagaki ,  Fumihiko Fukunaga ,  Yuji Takagi

    IPC: G06T7/00

    CPC classification number: G06T7/001 ,  G03F7/70633 ,  G06T2200/24 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01L22/12 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for measuring overlay at a semiconductor device on which circuit patterns are formed by a plurality of exposure processes is characterized in including an image capturing step for capturing images of a plurality of areas of the semiconductor device, a reference image setting step for setting a reference image based on a plurality of the images captured in the image capturing step, a difference quantifying step for quantifying a difference between the reference image set in the reference image setting step and the plurality of images captured in the image capturing step, and an overlay calculating step for calculating the overlay based on the difference quantified in the difference quantifying step.

    Abstract translation: 一种用于在通过多次曝光处理形成电路图案的半导体器件上测量覆盖层的方法的特征在于包括用于捕获半导体器件的多个区域的图像的图像捕获步骤，用于设置半导体器件的参考图像设置步骤 基于在图像拍摄步骤中捕获的多个图像的参考图像，用于量化参考图像设置步骤中设置的参考图像与在图像拍摄步骤中捕获的多个图像之间的差异的差分量化步骤，以及覆盖 基于在差分量化步骤中量化的差异来计算覆盖的计算步骤。

    Sample observation device and sample observation method
    9.
    发明授权
    Sample observation device and sample observation method 有权

    公开(公告)号：US11170483B2

    公开(公告)日：2021-11-09

    申请号：US16718264

    申请日：2019-12-18

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Minoru Harada ,  Yuji Takagi ,  Naoaki Kondo ,  Takehiro Hirai

    IPC: G06T5/50 ,  G06T5/00 ,  G06T7/00 ,  H01J37/22 ,  H01J37/20 ,  H01J37/28

    Abstract: A sample observation device images a sample placed on a movable table by irradiating and scanning the sample with a charged particle beam of a microscope. A degraded image having poor image quality and a high quality image having satisfactory image quality which are acquired at the same location of the sample by causing the charged particle microscope to change an imaging condition for imaging the sample are stored. An estimation process parameter is calculated for estimating the high quality image from the degraded image by using the stored degraded image and high quality image. A high quality image estimation unit processes the degraded image obtained by causing the charged particle microscope to image the desired site of the sample by using the calculated estimation process parameter. Thereby, the high quality image obtained at the desired site is estimated, and then the estimated high quality image is output.

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