Sample observation device and sample observation method

    公开(公告)号:US11170483B2

    公开(公告)日:2021-11-09

    申请号:US16718264

    申请日:2019-12-18

    Abstract: A sample observation device images a sample placed on a movable table by irradiating and scanning the sample with a charged particle beam of a microscope. A degraded image having poor image quality and a high quality image having satisfactory image quality which are acquired at the same location of the sample by causing the charged particle microscope to change an imaging condition for imaging the sample are stored. An estimation process parameter is calculated for estimating the high quality image from the degraded image by using the stored degraded image and high quality image. A high quality image estimation unit processes the degraded image obtained by causing the charged particle microscope to image the desired site of the sample by using the calculated estimation process parameter. Thereby, the high quality image obtained at the desired site is estimated, and then the estimated high quality image is output.

    Defect classification apparatus and defect classification method

    公开(公告)号:US10810733B2

    公开(公告)日:2020-10-20

    申请号:US16090991

    申请日:2016-05-24

    Abstract: Provided is a defect classification apparatus classifying images of defects of a sample included in images obtained by capturing the sample, the apparatus including an image storage unit for storing the images of the sample acquired by an external image acquisition unit, a defect class storage unit for storing types of defects included in the images of the sample, an image processing unit for extracting images of defects from the images from the sample, processing the extracted images of defects and generating a plurality of defect images, a classifier learning unit for learning a defect classifier using the images of defects of the sample extracted by the image processing unit and data of the plurality of generated defect images, and a defect classification unit for processing the images of the sample by using the classifier learned by the classifier learning unit, to classify the images of defects of the sample.

    Sample observation method and sample observation device

    公开(公告)号:US10229812B2

    公开(公告)日:2019-03-12

    申请号:US15544788

    申请日:2015-12-21

    Abstract: An inspection method uses a charged particle microscope to observe a sample and view a defect site or a circuit pattern. A plurality of images is detected by a plurality of detectors and a mixed image is generated by automatically adjusting and mixing weighting factors required when the plurality of images are synthesized with each other. The sample is irradiated and scanned with a charged particle beam so that the plurality of detectors arranged at different positions from the sample detects a secondary electron or a reflected electron generated from the sample. The mixed image is generated by mixing the plurality of images of the sample with each other for each of the plurality of detectors, which are obtained by causing each of the plurality of detectors arranged at the different positions to detect the secondary electron or the reflected electron. The generated mixed image is displayed on a screen.

    Defect observation method and defect observation device

    公开(公告)号:US09811897B2

    公开(公告)日:2017-11-07

    申请号:US14652198

    申请日:2013-12-06

    Abstract: The purpose of the present invention is to easily extract, from samples to be observed, defect candidates that can be labeled as a defect or “nuisance” (a part for which a manufacturing tolerance or the like is erroneously detected) and to allow parameters pertaining to observation processing to be easily adjusted. This defect observation method comprises: an imaging step to image, on the basis of defect information from an inspection device, an object to be inspected and obtain a defect image and a reference image corresponding to the defect image; a parameter determining step to determine a first parameter to be used in the defect extraction by using a first feature set distribution acquired from the reference image and the defect image captured in the imaging step and a second feature net distribution acquired from the reference image; and an observing step to observe using the first parameter determined in the parameter determining step. The present invention can be applied to a method of observing defects generated during the manufacturing of semiconductor wafers.

    Defect observation method and defect observation device
    5.
    发明授权
    Defect observation method and defect observation device 有权
    缺陷观察方法和缺陷观察装置

    公开(公告)号:US09569836B2

    公开(公告)日:2017-02-14

    申请号:US14650515

    申请日:2013-11-29

    Abstract: Cases in which defects are analyzed in a manufacturing process stage in which a pattern is not formed or in a manufacturing process in which a pattern formed on a lower layer does not appear in the captured image are increasing. However, in these cases, there is a problem of not being able to synthesize a favorable reference image and failing to detect a defect when a periodic pattern cannot be recognized in the pattern. In the present invention, a defect occupation rate, which is the percentage of an image being inspected occupied by a defect region, is found, it is determined whether the defect occupation rate is higher or lower than a threshold, and, in accordance with the determination results, it is determined whether to create, as the reference image, an image comprising pixels having the average luminance value of the luminance values of a plurality of pixels contained in the image being inspected. In particular, when the defect occupation rate is low, an image comprising pixels having the average luminance value of the luminance values of a plurality of pixels contained in the image being inspected is used as the reference image.

    Abstract translation: 在其中未形成图案的制造过程阶段或在下层中形成的图案没有出现在捕获图像中的制造工艺阶段中分析缺陷的情况日益增加。 然而,在这些情况下,在图案中不能识别出周期性图案时,存在不能合成有利的参考图像而不能检测到缺陷的问题。 在本发明中,找到作为缺陷区域所占据的被检查图像的百分比的缺陷占有率,确定缺陷占有率是高于还是低于阈值,并且根据 确定结果是否确定是否创建包括具有被检查图像中包含的多个像素的亮度值的平均亮度值的像素作为参考图像的图像。 特别地,当缺陷占有率低时,包括具有被检查图像中包含的多个像素的亮度值的平均亮度值的像素的图像被用作参考图像。

    DEFECT REVIEW METHOD AND APPARATUS
    6.
    发明申请
    DEFECT REVIEW METHOD AND APPARATUS 审中-公开
    缺陷审查方法和设备

    公开(公告)号:US20140037188A1

    公开(公告)日:2014-02-06

    申请号:US13970676

    申请日:2013-08-20

    Abstract: A candidate-defect classification method, including acquiring a scanning electron microscope image of a candidate defect detected on a sample including a pattern; computing a feature value of the candidate defect by processing the image; executing defect classification of the candidate defect as a pattern shape defect or another defect, by using the computed feature value; acquiring positional information contained in design data of the pattern regarding the candidate defect; and extracting a systematic defect from candidate defects classified as pattern shape defects, by comparing the positional information contained in the design data of the acquired candidate defect to positional information of a portion having a high probability of causing pattern formation failure, and that has been obtained from the design data of the pattern, or a systematic defect caused due to a layout shape of the pattern, or properties of a processor for forming the pattern.

    Abstract translation: 一种候选缺陷分类方法,包括获取在包含图案的样本上检测到的候选缺陷的扫描电子显微镜图像; 通过处理图像来计算候选缺陷的特征值; 通过使用所计算的特征值来执行候选缺陷的缺陷分类作为图案形状缺陷或另一缺陷; 获取包含在关于候选缺陷的图案的设计数据中的位置信息; 并通过将所获取的候选缺陷的设计数据中包含的位置信息与导致图案形成失败的可能性高的部分的位置信息进行比较,并将其分类为图案形状缺陷,从而提取系统缺陷。 从图案的设计数据或由于图案的布局形状引起的系统缺陷,或用于形成图案的处理器的属性。

    Sample observation device and sample observation method

    公开(公告)号:US10559074B2

    公开(公告)日:2020-02-11

    申请号:US15898366

    申请日:2018-02-16

    Abstract: A sample observation device images a sample placed on a movable table by irradiating and scanning the sample with a charged particle beam of a microscope. A degraded image having poor image quality and a high quality image having satisfactory image quality which are acquired at the same location of the sample by causing the charged particle microscope to change an imaging condition for imaging the sample are stored. An estimation process parameter is calculated for estimating the high quality image from the degraded image by using the stored degraded image and high quality image. A high quality image estimation unit processes the degraded image obtained by causing the charged particle microscope to image the desired site of the sample by using the calculated estimation process parameter. Thereby, the high quality image obtained at the desired site is estimated, and then the estimated high quality image is output.

    Defect inspection method and defect inspection device

    公开(公告)号:US09922414B2

    公开(公告)日:2018-03-20

    申请号:US14773319

    申请日:2014-01-27

    Abstract: In order to reduce the amount of time it takes to collect images of defects, this defect inspection device is provided with the following: a read-out unit that reads out positions of defects in a semiconductor wafer that have already been detected; a first imaging unit that takes, at a first magnification, a reference image of a chip other than the chip where one of the read-out defects is; a second imaging unit that takes, at the first magnification, a first defect image that contains the read-out defect; a defect-position identification unit that identifies the position of the defect in the first defect image taken by the second imaging unit by comparing said first defect image with the reference image taken by the first imaging unit; a third imaging unit that, on the basis of the identified defect position, takes a second defect image at a second magnification that is higher than the first magnification; a rearrangement unit that rearranges the read-out defects in an order corresponding to a path that goes through each of the read-out defects exactly once; and a stage-movement-path generation unit that selects the chip where the reference image corresponding to each defect is to be taken and generates a stage-movement path by determining stage-movement positions for the first and second imaging units.

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