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    Defect observation method and defect observation device
    1.
    发明授权
    Defect observation method and defect observation device 有权

    公开(公告)号：US09811897B2

    公开(公告)日：2017-11-07

    申请号：US14652198

    申请日：2013-12-06

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Minoru Harada ,  Yuji Takagi ,  Ryo Nakagaki ,  Takehiro Hirai ,  Hirohiko Kitsuki

    IPC: G06T7/00 ,  G01N21/95

    CPC classification number: G06T7/001 ,  G01N21/9501 ,  G06T2207/10004 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: The purpose of the present invention is to easily extract, from samples to be observed, defect candidates that can be labeled as a defect or “nuisance” (a part for which a manufacturing tolerance or the like is erroneously detected) and to allow parameters pertaining to observation processing to be easily adjusted. This defect observation method comprises: an imaging step to image, on the basis of defect information from an inspection device, an object to be inspected and obtain a defect image and a reference image corresponding to the defect image; a parameter determining step to determine a first parameter to be used in the defect extraction by using a first feature set distribution acquired from the reference image and the defect image captured in the imaging step and a second feature net distribution acquired from the reference image; and an observing step to observe using the first parameter determined in the parameter determining step. The present invention can be applied to a method of observing defects generated during the manufacturing of semiconductor wafers.

    Defect observation method and defect observation device
    2.
    发明授权
    Defect observation method and defect observation device 有权
    缺陷观察方法和缺陷观察装置

    公开(公告)号：US09569836B2

    公开(公告)日：2017-02-14

    申请号：US14650515

    申请日：2013-11-29

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Takehiro Hirai ,  Ryo Nakagaki ,  Minoru Harada

    IPC: G06K9/00 ,  G06T7/00 ,  G01N23/225 ,  G06K9/46

    CPC classification number: G06T7/001 ,  G01N23/2254 ,  G01N2223/418 ,  G01N2223/611 ,  G06K9/00 ,  G06K9/46 ,  G06K9/4661 ,  G06K2009/4666 ,  G06T2207/30148

    Abstract: Cases in which defects are analyzed in a manufacturing process stage in which a pattern is not formed or in a manufacturing process in which a pattern formed on a lower layer does not appear in the captured image are increasing. However, in these cases, there is a problem of not being able to synthesize a favorable reference image and failing to detect a defect when a periodic pattern cannot be recognized in the pattern. In the present invention, a defect occupation rate, which is the percentage of an image being inspected occupied by a defect region, is found, it is determined whether the defect occupation rate is higher or lower than a threshold, and, in accordance with the determination results, it is determined whether to create, as the reference image, an image comprising pixels having the average luminance value of the luminance values of a plurality of pixels contained in the image being inspected. In particular, when the defect occupation rate is low, an image comprising pixels having the average luminance value of the luminance values of a plurality of pixels contained in the image being inspected is used as the reference image.

    Abstract translation: 在其中未形成图案的制造过程阶段或在下层中形成的图案没有出现在捕获图像中的制造工艺阶段中分析缺陷的情况日益增加。 然而，在这些情况下，在图案中不能识别出周期性图案时，存在不能合成有利的参考图像而不能检测到缺陷的问题。 在本发明中，找到作为缺陷区域所占据的被检查图像的百分比的缺陷占有率，确定缺陷占有率是高于还是低于阈值，并且根据 确定结果是否确定是否创建包括具有被检查图像中包含的多个像素的亮度值的平均亮度值的像素作为参考图像的图像。 特别地，当缺陷占有率低时，包括具有被检查图像中包含的多个像素的亮度值的平均亮度值的像素的图像被用作参考图像。

    DEFECT REVIEW METHOD AND APPARATUS
    3.
    发明申请
    DEFECT REVIEW METHOD AND APPARATUS 审中-公开
    缺陷审查方法和设备

    公开(公告)号：US20140037188A1

    公开(公告)日：2014-02-06

    申请号：US13970676

    申请日：2013-08-20

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Ryo Nakagaki ,  Minoru Harada ,  Takehiro Hirai

    IPC: G06T7/00

    CPC classification number: G06T7/001 ,  G06T7/0006 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: A candidate-defect classification method, including acquiring a scanning electron microscope image of a candidate defect detected on a sample including a pattern; computing a feature value of the candidate defect by processing the image; executing defect classification of the candidate defect as a pattern shape defect or another defect, by using the computed feature value; acquiring positional information contained in design data of the pattern regarding the candidate defect; and extracting a systematic defect from candidate defects classified as pattern shape defects, by comparing the positional information contained in the design data of the acquired candidate defect to positional information of a portion having a high probability of causing pattern formation failure, and that has been obtained from the design data of the pattern, or a systematic defect caused due to a layout shape of the pattern, or properties of a processor for forming the pattern.

    Abstract translation: 一种候选缺陷分类方法，包括获取在包含图案的样本上检测到的候选缺陷的扫描电子显微镜图像; 通过处理图像来计算候选缺陷的特征值; 通过使用所计算的特征值来执行候选缺陷的缺陷分类作为图案形状缺陷或另一缺陷; 获取包含在关于候选缺陷的图案的设计数据中的位置信息; 并通过将所获取的候选缺陷的设计数据中包含的位置信息与导致图案形成失败的可能性高的部分的位置信息进行比较，并将其分类为图案形状缺陷，从而提取系统缺陷。 从图案的设计数据或由于图案的布局形状引起的系统缺陷，或用于形成图案的处理器的属性。

    CHARGED PARTICLE BEAM APPARATUS
    4.
    发明申请
    CHARGED PARTICLE BEAM APPARATUS 有权
    充电颗粒光束装置

    公开(公告)号：US20150060667A1

    公开(公告)日：2015-03-05

    申请号：US14391671

    申请日：2013-03-11

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Kohei Yamaguchi ,  Takehiro Hirai ,  Ryo Nakagaki

    IPC: G06T7/00 ,  H01J37/26

    CPC classification number: G06T7/0004 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01L22/12 ,  H01L22/20

    Abstract: In a pattern inspection of a semiconductor circuit, to specify a cause of a process defect, not only a distribution on and across wafer of the number of defects but also more detailed, that is, the fact that how many defects occurred where on the semiconductor pattern is needed to be specified in some cases. Accordingly, the present invention aims to provide an apparatus capable of easily specifying a cause of a process defect based upon a positional relationship of a distribution of defect occurrence frequency and a pattern. The apparatus includes: a charged particle beam optical system for detecting secondary charged particles by irradiating the charged particle beam to the sample; an image processing unit for, based upon a plurality of images to be inspected that are obtained by the secondary charged particles, obtaining an occurrence frequency of defect candidates for each of predetermined regions inside the detected image; and a display unit for displaying the distribution of the occurrence frequency of the defect candidates so that a positional relationship to the pattern is recognized.

    Abstract translation: 在半导体电路的图案检查中，为了指定工艺缺陷的原因，不仅在缺陷数量上和跨晶片上的分布也更为详细，即在半导体上发生多少缺陷的事实 在某些情况下需要指定模式。 因此，本发明的目的在于提供一种能够基于缺陷发生频率的分布与图案的位置关系容易地指定处理缺陷的原因的装置。 该装置包括：带电粒子束光学系统，用于通过将带电粒子束照射到样品来检测二次带电粒子; 图像处理单元，用于根据由二次带电粒子获得的多个待检查图像，获得检测图像内的每个预定区域的缺陷候选的出现频率; 以及显示单元，用于显示缺陷候选的出现频率的分布，从而识别与图案的位置关系。

    Defect analysis assistance device, program executed by defect analysis assistance device, and defect analysis system
    6.
    发明授权
    Defect analysis assistance device, program executed by defect analysis assistance device, and defect analysis system 有权
    缺陷分析辅助装置，由缺陷分析辅助装置执行的程序和缺陷分析系统

    公开(公告)号：US09582875B2

    公开(公告)日：2017-02-28

    申请号：US14400341

    申请日：2013-04-01

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Takehiro Hirai ,  Ryo Nakagaki ,  Kenji Obara

    IPC: G06K9/00 ,  G06T7/00 ,  H01L21/66 ,  G01N21/95 ,  G01N23/225 ,  G01N21/956

    CPC classification number: G06T7/001 ,  G01N21/9501 ,  G01N21/95607 ,  G01N23/2251 ,  G01N2223/6116 ,  G01N2223/646 ,  G06T7/0006 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01L22/12

    Abstract: Conventionally, there was no method for automatically selecting the layers to be overlaid, so when the number of layers to be overlaid was large, there was a problem that much time was required for selecting the layers. It is an object of the present invention to provide a defect image analysis method capable of specifying patterns and layers in which a defect occurs by overlaying defect images to be analysis targets and design layout data, and a defect image analysis system capable of improving the efficiency to select the layers from the design layout data. The present invention is characterized in dividing analysis target images for each hierarchy corresponding to a manufacturing process and generating a plurality of layers; calculating a degree of matching between each of the layer division images and each design layer of the design layout data; and specifying a design layer with a highest degree of matching of the each design layer as a design layer corresponding to the layer division image.

    Abstract translation: 通常，没有自动选择要重叠的层的方法，因此当要重叠的层数大时，存在选择层需要很多时间的问题。 本发明的目的是提供一种缺陷图像分析方法，其能够通过重叠作为分析对象的缺陷图像和设计布局数据来指定缺陷发生的图案和层，以及能够提高效率的缺陷图像分析系统 从设计布局数据中选择层。 本发明的特征在于，对与制造过程相对应的每一层划分分析目标图像并生成多个层; 计算每个层划分图像与设计布局数据的每个设计层之间的匹配程度; 并且将每个设计层具有最高匹配度的设计层指定为与层划分图像对应的设计层。

    Charged-Particle Radiation Apparatus
    7.
    发明申请
    Charged-Particle Radiation Apparatus 有权
    带电粒子辐射装置

    公开(公告)号：US20150279614A1

    公开(公告)日：2015-10-01

    申请号：US14433891

    申请日：2013-10-11

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Takehiro Hirai ,  Ryo Nakagaki ,  Kenji Obara

    IPC: H01J37/22 ,  H01J37/28

    CPC classification number: H01J37/222 ,  H01J37/28 ,  H01J2237/24592

    Abstract: The present invention provides a charged-particle radiation apparatus with a defect observation device for observing defects on a sample, the apparatus including a control unit and a display unit. The control unit is configured to execute a drift correction process on one or more images acquired with the defect observation device under a plurality of correction conditions, and display the plurality of correction conditions and a plurality of corrected images obtained through execution of the drift correction process in association with each other, as a first screen on the display unit.

    Abstract translation: 本发明提供一种具有用于观察样品上的缺陷的缺陷观察装置的带电粒子辐射装置，该装置包括控制单元和显示单元。 控制单元被配置为在多个校正条件下对由缺陷观察装置获取的一个或多个图像执行漂移校正处理，并且显示多个校正条件和通过执行漂移校正处理获得的多个校正图像 彼此相关联，作为显示单元上的第一屏幕。

    Charged-particle radiation apparatus
    10.
    发明授权
    Charged-particle radiation apparatus 有权

    公开(公告)号：US09685301B2

    公开(公告)日：2017-06-20

    申请号：US14433891

    申请日：2013-10-11

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Takehiro Hirai ,  Ryo Nakagaki ,  Kenji Obara

    IPC: H01J37/28 ,  H01J37/22

    CPC classification number: H01J37/222 ,  H01J37/28 ,  H01J2237/24592

    Abstract: The present invention provides a charged-particle radiation apparatus with a defect observation device for observing defects on a sample, the apparatus including a control unit and a display unit. The control unit is configured to execute a drift correction process on one or more images acquired with the defect observation device under a plurality of correction conditions, and display the plurality of correction conditions and a plurality of corrected images obtained through execution of the drift correction process in association with each other, as a first screen on the display unit.

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