Defect observation method and defect observation device

    公开(公告)号:US09811897B2

    公开(公告)日:2017-11-07

    申请号:US14652198

    申请日:2013-12-06

    Abstract: The purpose of the present invention is to easily extract, from samples to be observed, defect candidates that can be labeled as a defect or “nuisance” (a part for which a manufacturing tolerance or the like is erroneously detected) and to allow parameters pertaining to observation processing to be easily adjusted. This defect observation method comprises: an imaging step to image, on the basis of defect information from an inspection device, an object to be inspected and obtain a defect image and a reference image corresponding to the defect image; a parameter determining step to determine a first parameter to be used in the defect extraction by using a first feature set distribution acquired from the reference image and the defect image captured in the imaging step and a second feature net distribution acquired from the reference image; and an observing step to observe using the first parameter determined in the parameter determining step. The present invention can be applied to a method of observing defects generated during the manufacturing of semiconductor wafers.

    Charged-particle microscope
    2.
    发明授权
    Charged-particle microscope 有权
    带电粒子显微镜

    公开(公告)号:US08859962B2

    公开(公告)日:2014-10-14

    申请号:US14215209

    申请日:2014-03-17

    Abstract: A charged-particle-beam device is characterized in having a control value for an aligner coil (29) being determined by: a coil current and an electrode applied-voltage at a control value for objectives (30, 31), which is an electromagnetic-field superposition lens; a control value for image-shift coils (27, 28); and the acceleration voltage of the charged-particle-beam. By doing this, it has become possible to avoid image disturbances that occur on images to be displayed at boundaries between charged areas and non-charged areas, and provide a charged-particle-beam device that obtains clear images without any unevenness in brightness.

    Abstract translation: 带电粒子束装置的特征在于具有对准线圈(29)的控制值,通过以下方式确定:线圈电流和用于物镜(30,31)的控制值的电极施加电压,其为电磁 场叠加透镜; 图像转换线圈(27,28)的控制值; 和带电粒子束的加速电压。 通过这样做,可以避免在充电区域和非充电区域之间的边界处显示图像上出现的图像干扰,并且提供获得清晰图像而没有任何亮度不均匀的带电粒子束装置。

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