Abstract:
A method for bonding a first body (2) to a second, panel-shaped body (3) at bonding surfaces (2a, 3a) lying opposite each other, the second body (3) projecting in at least one direction (X) beyond an edge (2′) of the first body (2). The method includes: producing a plurality of spacers (4a to 4e, 4a′ to 4e′) on at least one of the bonding surfaces (2a), applying adhesive (5) into intermediate spaces (6a to 6d) between the spacers beyond an outer spacer (4e, 4e′) as far as an adhesive periphery (5a), which is formed at an edge (2′) of the first body (2), and bonding the bodies (2, 3) by bringing the bonding surfaces (2a, 3a) into contact at the spacers (4a′ to 4e′). A prescribed distance (d) between the adhesive periphery (5a) and the outermost spacer (4e) is set to provide a desired state of deformation of the panel-shaped body (3) after a shrinkage of the applied adhesive (5) (e.g. minimized bending of the body.) In an associated composite body (1), the prescribed distance (d) lies between 20 μm and 250 μm, preferably between 30 μm and 200 μm, in particular between 40 μm and 150 μm.
Abstract:
An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) includes a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.
Abstract:
The disclosure relates to methods for producing mirrors, in particular facet mirrors, and projection exposure apparatuses equipped with the mirrors.
Abstract:
Inside a vacuum chamber 200 a cleaning unit 204 provides atomic hydrogen or atomic deuterium for cleaning a surface 202 at a pressure of less than 10−4 Torr or of more than 10−3 Torr. The surface 202 is heated by the heating unit 203 to a temperature of at least 50° C. This allows achieving cleaning rates of more than 60 Å/h. Preferably, the surface 202 is the surface of a multilayer mirror 201 as used in an EUV lithography apparatus.
Abstract:
To improve the bonding of two parts (401, 403) of a component (400) of an EUV or UV lithography apparatus such that the probability of occurrence of additional stress over time in the bonded parts (401, 403) is lessened, a component (400) of an EUV or UV lithography apparatus comprising two parts (401, 403) bonded to each other by adhesive material (405) is proposed, wherein the adhesive material (405) is coated with a protective layer (407) insulating the adhesive material (405) from the surrounding gas environment.
Abstract:
In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).
Abstract:
An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) comprises a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.
Abstract:
In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).