Projection system for EUV lithography
    3.
    发明授权
    Projection system for EUV lithography 有权
    EUV光刻投影系统

    公开(公告)号:US07375798B2

    公开(公告)日:2008-05-20

    申请号:US11657420

    申请日:2007-01-24

    IPC分类号: G03B27/54 G03B27/42 G02B5/10

    摘要: There is provided an EUV optical projection system. The system includes a first mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror, and a sixth mirror situated in an optical path from an object plane to an image plane, for imaging an object in said object plane into an image in said image plane. The image has a width W and a secant length SL, and the width W is greater than about 2 mm.

    摘要翻译: 提供了一个EUV光学投影系统。 该系统包括位于从物平面到像平面的光路中的第一镜,第二镜,第三镜,第四镜,第五镜和第六镜,用于将所述物平面中的物体成像成 所述图像平面中的图像。 图像具有宽度W和割线长度SL,宽度W大于约2mm。

    Projection system for EUV lithography
    4.
    发明授权
    Projection system for EUV lithography 有权
    EUV光刻投影系统

    公开(公告)号:US07355678B2

    公开(公告)日:2008-04-08

    申请号:US11243407

    申请日:2005-10-04

    IPC分类号: G03B27/54 G03B27/42

    摘要: An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M2) and a tertiary mirror (M3), such that a primary mirror (M1) and the secondary mirror (M2) form a first optical group (G1) and the tertiary mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G2). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M1) and the secondary mirror (M2). The secondary mirror (M2) is preferably concave, and the tertiary mirror (M3) is preferably convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15°. The system preferably has a numerical aperture greater than 0.18 at the image (IM). The system is preferably configured such that a chief ray (CR) converges toward the optical axis (OA) while propagating between the secondary mirror (M2) and the tertiary mirror (M3).

    摘要翻译: EUV光学投影系统包括用于对图像(IM)上的物体(OB)进行成像的至少六个反射表面。 该系统优选地配置成沿着从物体(OB)到次级反射镜(M 2)和第三反射镜(M 3)之间的图像(IM)的光路形成中间图像(IMI),使得主 反射镜(M 1)和副镜(M 2)形成第一光学组(G 1)和第三反射镜(M 3),第四反射镜(M 4),第五反射镜(M5)和第六反射镜 (M 6)形成第二光学组(G 2)。 该系统还优选地包括沿着从物体(OB)到主镜(M 1)和副镜(M 2)之间的图像(IM)的光路定位的孔径光阑(APE)。 副镜(M 2)优选为凹面,第三反射镜(M 3)优选为凸面。 六个反射表面中的每一个优选地以小于大约15°的入射角从中心场点接收主光线(CR)。 该系统优选地在图像(IM)处具有大于0.18的数值孔径。 优选地,该系统构造成使得主光线(CR)在副反射镜(M 2)和第三反射镜(M 3)之间传播的同时朝向光轴(OA)会聚。

    Projection system for EUV lithograhphy
    5.
    发明申请
    Projection system for EUV lithograhphy 有权
    EUV光刻投影系统

    公开(公告)号:US20070153252A1

    公开(公告)日:2007-07-05

    申请号:US11657420

    申请日:2007-01-24

    IPC分类号: G03B27/54

    摘要: There is provided an EUV optical projection system. The system includes a first mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror, and a sixth mirror situated in an optical path from an object plane to an image plane, for imaging an object in said object plane into an image in said image plane. The image has a width W and a secant length SL, and the width W is greater than about 2 mm.

    摘要翻译: 提供了一个EUV光学投影系统。 该系统包括位于从物平面到像平面的光路中的第一镜,第二镜,第三镜,第四镜,第五镜和第六镜,用于将所述物平面中的物体成像成 所述图像平面中的图像。 图像具有宽度W和割线长度SL,宽度W大于约2mm。

    Projection system for EUV lithography
    6.
    发明申请
    Projection system for EUV lithography 审中-公开
    EUV光刻投影系统

    公开(公告)号:US20070070322A1

    公开(公告)日:2007-03-29

    申请号:US11604997

    申请日:2006-11-28

    IPC分类号: G03B27/54

    摘要: An EUV optical projection system includes at least six mirrors (M1, M2, M3, M4, M5, M6) for imaging an object (OB) to an image (IM). At least one mirror pair is preferably configured as an at least phase compensating mirror pair. The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a second mirror (M2) and a third mirror (M3), such that a first mirror (M1) and the second mirror (M2) form a first optical group (G1) and the third mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G1). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the first mirror (M1) and the second mirror (M2). The second mirror (M2) is preferably convex, and the third mirror (M3) is preferably concave. The system preferably forms an image (IM) with a numerical aperture greater than 0.18.

    摘要翻译: EUV光学投影系统包括用于将物体(OB)成像到图像(IM)的至少六个反射镜(M 1,M 2,M 3,M 4,M 5,M 6)。 优选地,至少一个镜对配置为至少相位补偿镜对。 该系统优选地被配置成沿着从物体(OB)到第二反射镜(M 2)和第三反射镜(M 3)之间的图像(IM))的光路形成中间图像(IMI),使得第一 反射镜(M 1)和第二反射镜(M 2)形成第一光学组(G 1)和第三反射镜(M 3),第四反射镜(M 4),第五反射镜(M5)和第六反射镜 (M 6)形成第二光学组(G 1)。 该系统还优选地包括沿着从物体(OB)到第一反射镜(M 1)和第二反射镜(M 2)之间的图像(IM))的光路定位的孔径光阑(APE)。 第二镜(M 2)优选为凸面,第三镜(M 3)优选为凹面。 该系统优选地形成数值孔径大于0.18的图像(IM)。

    Optical apparatus for diffracting radiation having wavelength ≦160 nm
    9.
    发明授权
    Optical apparatus for diffracting radiation having wavelength ≦160 nm 失效
    用于衍射具有波长<= 160nm的辐射的光学装置

    公开(公告)号:US06700952B2

    公开(公告)日:2004-03-02

    申请号:US09760091

    申请日:2001-01-11

    IPC分类号: G21K106

    摘要: There is provided an optical apparatus for radiation with a wavelength ≦160 nm. The apparatus comprises a mirror with a mirror surface, and a first device for generating elastic oscillations with different acoustic wavelengths on the mirror surface due to surface deformations. Radiation impinging on the mirror surface is diffracted in a predetermined range of angles (&agr;).

    摘要翻译: 提供了一种波长<= 160nm的辐射光学装置。 该装置包括具有镜面的反射镜,以及用于由于表面变形而在镜面上产生具有不同声波长的弹性振荡的第一装置。 撞击在镜面上的辐射在预定的角度范围(α)被衍射。

    Microlithography projection objective and projection exposure apparatus
    10.
    发明授权
    Microlithography projection objective and projection exposure apparatus 失效
    微光投影物镜和投影曝光装置

    公开(公告)号:US06495839B1

    公开(公告)日:2002-12-17

    申请号:US09523297

    申请日:2000-03-10

    申请人: Udo Dinger

    发明人: Udo Dinger

    IPC分类号: G21K500

    CPC分类号: G03F7/70233 G02B17/0657

    摘要: The invention is concerned with a microlithography projection objective device for short wavelength microlithography, preferably

    摘要翻译: 本发明涉及一种用于短波微光刻的微光刻投影物镜装置,优选<100nm,第一镜(S1),第二镜(S2),第三镜(S3),第四镜(S4)和 第五镜(S5)。 本发明的特征在于,图像侧数值孔径(NA)大于或等于0.10,并且最接近被照射物体的反射镜(优选晶片)的布置方式使得图像 - 至少与最接近晶片的反射镜的使用直径(D)相对应; 图像侧光学自由工作距离至少为最接近晶片的反射镜的使用直径(D)的三分之一和位于20mm和30mm之间的长度的总和; 和/或图像侧光学自由工作距离为至少50mm,优选为60mm。