Nanoimprint resist
    7.
    发明授权
    Nanoimprint resist 有权
    纳米抗蚀剂

    公开(公告)号:US07431858B2

    公开(公告)日:2008-10-07

    申请号:US10511402

    申请日:2003-04-09

    摘要: The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.

    摘要翻译: 本发明涉及一种用于微结构化电子部件的方法,其以良好的纵横比产生高分辨率(<= 200nm),同时显着地低于光刻方法。 本发明的方法包括以下步骤:i)制备根据权利要求1的纳米复合组合物的平面未硬化溶胶膜; ii)制备由底涂层(b)和载体(c)组成的靶基材; iii)在步骤i)中获得的溶胶膜材料通过微结构转印压花印刷施加到在步骤ii)中获得的底涂层(b) iv)涂覆的溶胶膜材料硬化; v)分离转印压花印模,由此获得作为顶涂层(a)的压花微结构。 制造微结构化半导体材料的方法包括以下附加步骤:vi)纳米复合溶胶膜的剩余层被等离子体蚀刻,优选地具有CHF 3 O 2 / O 2等离子体 ; vii)底涂层被等离子体蚀刻,优选为O 2等离子体; viii)蚀刻半导体材料或者在蚀刻区域中掺杂半导体材料。

    Nanoimprint resist
    9.
    发明申请
    Nanoimprint resist 有权
    纳米抗蚀剂

    公开(公告)号:US20050224452A1

    公开(公告)日:2005-10-13

    申请号:US10511402

    申请日:2003-04-09

    摘要: The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.

    摘要翻译: 本发明涉及一种用于微结构化电子部件的方法,其以良好的纵横比产生高分辨率(<= 200nm),同时显着地低于光刻方法。 本发明的方法包括以下步骤:i)制备根据权利要求1的纳米复合组合物的平面未硬化溶胶膜; ii)制备由底涂层(b)和载体(c)组成的靶基材; iii)在步骤i)中获得的溶胶膜材料通过微结构转印压花印刷施加到在步骤ii)中获得的底涂层(b) iv)涂覆的溶胶膜材料硬化; v)分离转印压花印模,由此获得作为顶涂层(a)的压花微结构。 制造微结构化半导体材料的方法包括以下附加步骤:vi)纳米复合溶胶膜的剩余层被等离子体蚀刻,优选地具有CHF 3 O 2 / O 2等离子体 ; vii)底涂层被等离子体蚀刻,优选为O 2等离子体; viii)蚀刻半导体材料或者在蚀刻区域中掺杂半导体材料。